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IRF[International Rectifier]
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| Part No. |
IRFPS43N50K IRFPS43N50
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| OCR Text |
... .
Starting TJ = 25C, L = 0.82mh, RG = 25,
IAS = 47A (See Figure 12a).
ISD 47A, di/dt 230A/s, VDD V(BR)DSS,
TJ 150C.
2
www.irf.com
IRFPS43N50K
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source... |
| Description |
500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A)
Power MOSFET(Vdss=500V Rds(on)typ.=0.078ohm Id=47A)
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| File Size |
98.65K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
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| Part No. |
FQU24N08 FQD24N08 FQD24N08TF FQD24N08TM
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| OCR Text |
...m junction temperature 2. L = 0.82mh, IAS = 19.6A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 24A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te... |
| Description |
80V N-Channel QFET
80V N-Channel MOSFET 19.6 A, 80 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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| File Size |
706.21K /
9 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDA62N28
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| OCR Text |
...m junction temperature 2. L = 0.82mh, IAS = 62A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 62A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temper... |
| Description |
280V N-Channel MOSFET
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| File Size |
692.63K /
8 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRHM8260 IRHM3260 IRHM4260 IRHM7260
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| OCR Text |
...D = 25V, starting TJ = 25C, L=0.82mh Peak IL = 35A, VGS =12V ISD 35A, di/dt 410A/s, VDD 200V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation p... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) 抗辐射功率MOSFET的通孔T0 254AA
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| File Size |
263.31K /
8 Page |
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it Online |
Download Datasheet |
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