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  40-ohm Datasheet PDF File

For 40-ohm Found Datasheets File :: 30877    Search Time::1.235ms    
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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...ance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Jul-31-1996 BSM 50 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specifie...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...5 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Te m peratu re (C ) TJ , Junction Tempe...Ohm VGE = 15V VCC = 480V IC = 26A Total Switching Losses (mJ) Total Switching Losses (mJ) I...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...4.0V 5.0V ID, DRAIN CURRENT (A) 40 7.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 2 1.8 VGS = 4.0V 1.6 1.4 1.2 1 0.8 0 1 2...OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 11.5A VGS = 10V 1.4 ID = 6A 0....
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...or high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM a...Ohm VGE = 15V VCC = 720V 100 IC = 200 A IC = 100 A IC = 50 A 40 10 30 10 20 30 40 50 ...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...or high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM a...Ohm VGE = 15V VCC = 720V IC = 250 A 100 60 IC = 125 A IC = 62.5 A 50 40 0 10 20 30 4...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...or high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM a...Ohm VGE = 15V VCC = 720V IC = 100 A IC = 50 A IC = 25 A 20 10 18 16 14 0 10 20 ...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...or high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM a...Ohm) ( ) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C )...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ... 16 24 ID, DRAIN CURRENT (A) 32 40 1.2 0.6 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE ...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ... CURRENT (A) 60 75 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...RCE VOLTAGE (V) 1ms 10ms DC -40 -20 VGS = 4V VGS = 6V VGS = 5V 1 0 0 -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS PULSE DURATION ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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