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  18.7-ohm Datasheet PDF File

For 18.7-ohm Found Datasheets File :: 16490    Search Time::1.968ms    
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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...istics Transconductance gfs 18 8 0.64 0.25 - S nF - VCE = 20 V, IC = 50 A Input capacitance Ciss Coss - VCE = 25 V, VGE = ...7 C 0.9 -1 Crss 0 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Sh...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text 18 Q3 D3 15 10 Q6 D6 Q5 D5 16 IGBT SIP MODULE Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 k...7 13 19 Product Summary Output Current in a Typical 20 kHz Motor Drive 11 ARMS per phase (...
Description IGBT SIP MODULE

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ... A, RGEN = 6 10 10 34 14 18 18 55 23 24 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 11.5 A, 17 6.2 5.5 Drain-Sourc...7 A IF = 11.5A, diF/dt = 300 A/s (Note 2) (Note 2) 3.5 0.45 0.6 20 19.7 0.7 A V nS nC (Not...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ... 50 A IC = 25 A 20 10 18 16 14 0 10 20 30 40 50 ( RG , Gate Resistance (Ohm)) 1 -60 -40 -20 0 20 40 60 ...7 2 0V TJ = 1 25 C TJ = 2 5C 200 VR = 7 2 0V TJ = 1 25 C TJ = 2 5C I F = 10 0A I F = 5 0A I F...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...L = 1.1 VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 2.9 - 0.32 0.48 4.3 9.1 2...7 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width l...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...RG = 9.1, RL = 8.9 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 6.7 - 0.20 0.24 10 16 67 53 49 39 0.28 0.34 24 100 80 74 59 S ns ns ns ns nC - 6.6 20 - nC nC 5-2 I...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...pecified IRF9150 -100 -100 -25 -18 -100 20 150 1.2 1300 -25 -55 to 150 300 UNITS V V A A A V W W/oC mJ A oC oC Drain to Source Breakdown...7 1.5 300 1.5 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ...= 2.3, VGS = -10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -19A, VDS =...7 16 65 47 28 70 14 56 1100 550 250 3.5 MAX -4 -25 -250 100 0.200 20 100 70 70 90 - UNITS V V ...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ...0 for BVDSS = 150V (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -3.5A, VDS ...7 350 100 30 3.5 MAX -4 -25 -250 100 1.500 50 100 120 75 22 - UNITS V V A A A nA S ns ns ns n...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

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    MC10117 MC10117FN MC10117L MC10117P ON0562

ONSEMI[ON Semiconductor]
Motorola, Inc
Part No. MC10117 MC10117FN MC10117L MC10117P ON0562
OCR Text ... 1.40 1.65 2.54 BSC 0.21 0.38 3.18 4.31 7.62 BSC 0_ 15 _ 0.51 1.01 -T- SEATING PLANE N E F D G 16 PL K M J 16 PL 0.25 (0.010) M M TB S 0.25 (0.010) TA S -A- 16 9 P SUFFIX PLASTIC DIP PACKAGE CASE 648...
Description From old datasheet system
PIN ASSIGNMENT
Dual 2-Wide 2-3-Input OR-AND/OR-AND Gate

File Size 102.28K  /  5 Page

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For 18.7-ohm Found Datasheets File :: 16490    Search Time::1.968ms    
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