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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM29N16000AT KM29N16000AIT
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| OCR Text |
...Erase Cycles - Data Retention : 10years * Command Register Operation * 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch) - Forward Type
FLASH MEMORY
GENERAL DESCRIPTION
The KM29N16000A is a 2M(2,097,152)x8bit NAND Flash Memory with ... |
| Description |
2Mx8 Bit NAND Flash Memory(2Mx8NAND闪速存储器)
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| File Size |
268.49K /
23 Page |
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Download Datasheet
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Golledge Electronics Ltd.
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| Part No. |
HTV546 HTF546
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| OCR Text |
...nce temperature, voltage, load, 10years ageing, shock & vibration) temperature range: 0 to +70c other specify storage temperature range: -40 to +85c supply voltage (v dd ): +5.0v (5%) supply current: 35ma max driving ability:... |
| Description |
5V HCMOS TCXO Stratum 3
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| File Size |
52.98K /
1 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM29V040T
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| OCR Text |
...valid blocks are guaranteed for 10years data retention or 1m program erase cycling . (refer to the attached technical notes ) 2. the 1st block, which is placed on 00h block address, is guaranteed to be a good block. parameter symbol min t... |
| Description |
512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)
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| File Size |
223.64K /
21 Page |
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it Online |
Download Datasheet |
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10years Found Datasheets File :: 16 Search Time::1.422ms
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