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TY Semiconductor Co., Ltd
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| Part No. |
CJQ4459
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| OCR Text |
...50a -1.4 -2.4 v v gs =-10v, i d =-6.5a 46 m ? drain-source on-resistance (note 4) r ds(on) v gs =-4.5v, i d =-5a 72 m ? forward tranconductance (note 4) g fs v ds =-5v, i d =-6.5a 6 s diode for... |
| Description |
SOP8 Plastic-Encapsulate MOSFETS
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| File Size |
607.79K /
3 Page |
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Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SC5077 2SC5077A
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| OCR Text |
...= 0.8A IC = 4A, IB = 0.8A VCE = 10v, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.8A, IB2 = -1.6A, VCC = 200V 500 15 8 1.0 1.5 1.0 1.0 3.0 0.3 V V MHz s s s min typ max 100 100 100 Unit A A A V
1
Power Transistors
PC -- Ta
60 12 (1) TC=Ta (... |
| Description |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR
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| File Size |
61.72K /
3 Page |
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http://
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
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| Part No. |
2SC829 2SC829B 2SC829C
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| OCR Text |
..., IB = 0 IE = 10A, IC = 0 VCE = 10v, IC = 1mA VCB = 10v, IC = 1mA, f = 200MHz VCE = 10v, IC = 1mA, f = 10.7MHz VCB = 10v, IE = -1mA, f = 2MHz min 30 20 5 70 150 230 1.3 1.6 60 250 MHz pF typ max Unit V V V
*h
FE
Rank classificatio... |
| Description |
Silicon NPN epitaxial planer type(For high-frequency amplification)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
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| File Size |
54.87K /
3 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
CJQ4438
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| OCR Text |
...i d =250a 1 3 v v gs =10v, i d =8.2a 22 m ? drain-source on-resistance (note 3) r ds(on) v gs =4.5v, i d =7.6a 30 m ? forward tranconductance (note 3) g fs v ds =5v, i d =8.2a 1 0 ... |
| Description |
SOP8 Plastic-Encapsulate MOSFETS
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| File Size |
415.40K /
3 Page |
View
it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
CJQ4435
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| OCR Text |
...d =-250a -1 -3 v v gs =-10v, i d =-9.1a 24 drain-source on-state resistance (note 2) r ds(on ) v gs =-4.5v, i d =-6.9a 35 m ? forward transconductance (note 2) g fs v ds =-10v, i d =-9.1a 20 s dyn... |
| Description |
SOP8 Plastic-Encapsulate MOSFETS
|
| File Size |
604.59K /
3 Page |
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it Online |
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Advanced Power Electronics
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| Part No. |
AP9971GS
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| OCR Text |
...ntinuous drain current, v gs @ 10v 25 continuous drain current, v gs @ 10v 16 pulsed drain current 1 80 total power dissipation 39 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.31 thermal data paramet... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
59.04K /
4 Page |
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it Online |
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| Part No. |
IRFP3415
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| OCR Text |
10v 43 i d @ t c = 100c continuous drain current, v gs @ 10v 30 a i dm pulsed drain current p d @t c = 25c power dissipation 200 w linear derating factor 1.3 w/ v gs gate-to-source voltage 20 v e as single pulse avalanche ... |
| Description |
43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
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| File Size |
504.57K /
9 Page |
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it Online |
Download Datasheet |
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