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Vishay Semiconductors
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| Part No. |
BA283-TAP
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| OCR Text |
... forward continuous current i f 100 ma thermal characteristics (1) parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temperature t j 150 c storage temper... |
| Description |
DIODE SILICON, VHF BAND, MIXER DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Microwave Mixer Diode
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| File Size |
104.86K /
3 Page |
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it Online |
Download Datasheet
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Vishay Semiconductors
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| Part No. |
BAT42-TAP
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| OCR Text |
...everse breakdown voltage i r = 100 a (pulsed) v (br) 30 v leakage current (1) v r = 25 v i r 0.5 a v r = 25 v, t j = 100 c i r 100 a forward voltage (1) i f = 200 ma v f 1000 mv i f = 10 ma bat42 v f 400 mv i f = 50 ma bat42 v f 65... |
| Description |
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
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| File Size |
79.44K /
4 Page |
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it Online |
Download Datasheet |
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Vishay Semiconductors
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| Part No. |
BAT82S-TAP
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| OCR Text |
...-35 0 2 4 6 8 10 12 14 25 50 75 100 125 150 t j - j u nction temperat u re (c) 15794 v r = 60 v p r - re v erse po w er dissipation (mw) r thja = 540 k/w p r v r - limit at 100 % p r - limit at 100 % v r p r - limit at 80 % v r 0.1... |
| Description |
BAT81S, BAT82S, BAT83S Small Signal Schottky Diodes
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| File Size |
74.42K /
3 Page |
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it Online |
Download Datasheet |
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VISHAY SEMICONDUCTORS
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| Part No. |
AS34-TAP
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| OCR Text |
...ax. unit forward voltage i f = 100 ma v f 1000 mv reverse current e 300 lx, v r i r 13na e 300 lx, v r , t j = 125 c i r 0.5 a e 300 lx, v r = 15v bas33 i r 0.5 1 na e 300 lx, v r = 30 v bas34 i r 0.5 1 na breakdown voltage... |
| Description |
0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35
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| File Size |
89.27K /
3 Page |
View
it Online |
Download Datasheet |
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