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parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -9.2 i d @ t a = 70c continuous drain current, v gs @ -4.5v -7.4 a i dm pulsed drain current -37 p d @t a = 25c power dissipation 2.0 p d @t a = 70c power dissipation 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 8.0 v t j, t stg junction and storage temperature range -55 to + 150 c 10/7/04 www.irf.com 1 IRF7329PBF hexfet power mosfet
symbol parameter typ. max. units r jl junction-to-drain lead CCC 20 r ja junction-to-ambient CCC 62.5 c/w thermal resistance v dss r ds(on) max (m i d 17@v gs = -4.5v 9.2a -12v 21@v gs = -2.5v 7.4a 30@v gs = -1.8v 4.6a description trench technology ultra low on-resistance dual p-channel mosfet low profile (<1.8mm) available in tape & reel lead-free new p-channel hexfet ? power mosfets from international rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering technique so-8 d1 d1 d 2 d2 g1s2 g2 s1 top view 8 12 3 4 5 6 7 downloaded from: http:///
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source curre nt integral reverse (body diode) p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time CCC 50 75 ns t j = 25c, i f = -2.0a q rr reverse recovery charge CCC 48 72 nc di/dt = -100a/s source-drain ratings and characteristics -37 -2.0 a electrical characteristics @ t j = 25c (unless otherwise specified) repetitive rating; pulse width limited by max. junction temperature. pulse width 400s duty cycle s d g parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 CCC CCC v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.007 CCC v/c reference to 25c, i d = -1ma CCC CCC 17 v gs = -4.5v, i d = -9.2a CCC 21 v gs = -2.5v, i d = -7.4a CCC 30 v gs = -1.8v, i d = -4.6a v gs(th) gate threshold voltage -0.40 CCC -0.90 v v ds = v gs , i d = -250a g fs forward transconductance 25 CCC CCC s v ds = -10v, i d = -9.2a CCC CCC -1.0 v ds = -9.6v, v gs = 0v CCC CCC -25 v ds = -9.6v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -8.0v gate-to-source reverse leakage CCC CCC 100 v gs = 8.0v q g total gate charge CCC 38 57 i d = -9.2a q gs gate-to-source charge CCC 6.8 10 nc v ds = -6.0v q gd gate-to-drain ("miller") charge CCC 8.1 12 v gs = -4.5v t d(on) turn-on delay time CCC 10 CCC v dd = -6.0v t r rise time CCC 8.6 CCC i d = -1.0a t d(off) turn-off delay time CCC 340 CCC r d = 6.0 ? t f fall time CCC 260 CCC v gs = -4.5v c iss input capacitance CCC 3450 CCC v gs = 0v c oss output capacitance CCC 1000 CCC pf v ds = -10v c rss reverse transfer capacitance CCC 640 CCC ? = 1.0mhz i gss a m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns when mounted on 1 inch square copper board. downloaded from: http:///
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -9.2a 0.1 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs -10v -7.0v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.2v 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs -10v -7.0v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.2v 1.0 1.4 1.8 2.2 -v gs , gate-to-source voltage (v) 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = -10v 20s pulse width downloaded from: http:///
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 60 70 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -9.2a v = -6v ds v = -9.6v ds 1 10 100 -v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j downloaded from: http:///
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) -i , drain current (a) c d
1 0.1 %
+ - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0.0 2.0 4.0 6.0 8.0 -v gs, gate -to -source voltage (v) 0.010 0.015 0.020 0.025 0.030 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -9.2a 4 6 8 10 12 14 -i d , drain current (a) 0.010 0.015 0.020 0.025 0.030 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -2.5v v gs = -1.8v v gs = -4.5v downloaded from: http:///
www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250a typical power vs. time 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 20 40 60 80 100 p o w e r ( w ) downloaded from: http:///
8 www.irf.com so-8 package outlinedimensions are shown in milimeters (inches) e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 43 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms -012aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. cont roll ing dime ns ion: mil lime te r 3. di me ns i ons ar e s h own i n mi l l i me t e r s [i nch e s ] . 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he le ngt h of l e ad f or s ol dering t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. 8x 1.78 [.070] so-8 part marking information (lead-free) dat e code (yww) xxxx int ernat ional rect ifier logo f 7101 y = l as t digit of t he ye ar part number lot code ww = we e k e xample: t his is an irf7101 (mos fe t ) p = de s i gnat e s l e ad-f r e e product (optional) a = as s e mb l y s i t e code downloaded from: http:///
www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/04 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in milimeters (inches) downloaded from: http:///

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