CHX2090 rohs compliant ref. : dsCHX20909028 1/4 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 12-24ghz frequency multiplier gaas monolithic microwave ic description the CHX2090 is a cascadable by 2 frequency multiplier monolithic circuit. it is designed for a wide range of applications, from military to commercial communication systems. the backside of the chip is both rf and dc grounds. this helps simplify the assembly process. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. main features broadband performances: 11-13ghz 15dbm output power for +12dbm input power dc bias: vd=3.5volt@id=50ma chip size: 1.67 x 0.97 x 0.10mm typical measurements -16 -12 -8 -4 0 4 8 12 16 20 9 10 11 12 13 14 15 input frequency (ghz) output power (dbm) pout (fin) pout (2*fin) main characteristics tamb. = 25c symbol parameter min typ max unit fin input frequency range 11 13 ghz fout output frequency range 22 26 ghz pin input power 6 12 dbm pout output power for +12dbm input power 13 15 dbm esd protection : electrostatic discharge sensitive device. observe handling precautions !
CHX2090 12- 24ghz frequency multiplier ref. : dsCHX20909028 2/4 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics tamb = +25c, vd = 3.5v , vg1 = -0.9v , vg2 = -0.4v . symbol parameter min typ max unit fin input frequency range 11 13 ghz fout output frequency range 22 26 ghz pin input power 6 12 dbm pout output power for +12dbm input power 11 15 dbm is/fo fin level at the output ( 11.5 < fin < 13) - 10 -4 dbm vswrin input vswr 2.0:1 vswrout output vswr 2.5:1 id bias current 50 70 ma absolute maximum ratings tamb. = 25c (1) symbol parameter values unit vd drain bias voltage 5v v id drain bias current 120 ma vg gate bias voltage -2 to +0.4 v ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +155 c (1) operation of this device above anyone of these parameters may cause permanent damage.
12-24ghz frequency multiplier CHX2090 ref. : dsCHX20909028 3/4 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on jig measurements. bias conditions: vd = 3.5v , vg1 = -0.9v , vg2 = -0 .4v. pout = f(fin) for pin=12 dbm. -16 -12 -8 -4 0 4 8 12 16 20 9 10 11 12 13 14 15 input frequency (ghz) output power (dbm) pout (fin) pout (2*fin) s11 and s22 = f(fin) for pin = 0 dbm . pout = f(pin) for fin = 11.5 ghz. -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 5 10 15 20 25 30 input frequency (ghz) return losses (db) s11 s22 -10 -8 -6 -4 -2 0 2 4 6 8 10 5 7 9 11 13 15 17 input power (dbm) fin output power (dbm) 0 2 4 6 8 10 12 14 16 18 20 2fin output power (dbm) pout (fin) pout (2*fin) pout = f(vg2) for pin = 10 dbm and pout = f(vg2 ) for pin=14 dbm and fin = 11.5 ghz. fin = 11.5 ghz. -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 -1,6 -1,4 -1,2 -1 -0,8 -0,6 -0,4 -0,2 vg2 (v) fin output power (dbm) -4 -2 0 2 4 6 8 10 12 14 16 2fin output power (dbm) pout (fin) pout (2*fin) -10 -8 -6 -4 -2 0 2 4 6 8 10 -1,6 -1,4 -1,2 -1 -0,8 -0,6 -0,4 vg2 (v) fin output power (dbm) 0 2 4 6 8 10 12 14 16 18 20 2fin output power (dbm) pout (fin) pout (2*fin)
CHX2090 12- 24ghz frequency multiplier ref. : dsCHX20909028 4/4 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data vd=3.5v vg1=-0.9v vg2=-0.4v. 1nf 100pf 100pf to vg2 dc gate supply feed to vg1 dc gate supply feed to vd dc drain supply feed in out note : supply feed should be capacitively bypassed. 25 m m diameter gold wire is to be prefered. 16 1670 +/- 35 1410 1070 740 490 415 415 970 +/- 35 bonding pad positions (chip thickness: 100m. all dimensions are in micro meters) ordering information chip form : CHX2090-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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