copyright@ semipower electronic technology co., ltd. all rights reserved. s ep . 2016. rev. 2.0 1 /6 SW69N65K2 absolute maximum ratings symbol parameter value unit v dss drain to source voltage 650 v i d continuous drain current (@t c =25 o c) 69* a continuous drain current (@t c =100 o c) 43* a i dm drain current pulsed (note 1) 276 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 2335 mj e ar repetitive avalanche energy (note 1) 235 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 625 w derating factor above 25 o c 5 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 0.2 o c /w r thja thermal resistance, junction to ambient 36 o c /w *. drain current is limited by junction temperature. 1. gate 2. drain 3. source order codes item sales type marking package packaging 1 sw t 69n65k2 SW69N65K2 to - 247 tube n - channel enhanced mode to - 247 mosfet features ? high ruggedness ? low r ds( on ) (t yp 32m ?) low gate charge ( typ 181nc) ? improved dv/dt capability ? 100% avalanche tested ? application:charge,led, pc power general description this power mosfet is produced with super junction advanced technology of samwin. this technology enable the power mosfet to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. bv dss : 650v i d : 69a r ds(on) : 32 m ? 1 2 3 to - 247 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. s ep . 2016. rev. 2.0 2 /6 SW69N65K2 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 650 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.29 v/ o c i dss drain to source leakage current v ds =650v, v gs =0v 1 ua v ds =520v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =1ma 2 4 v r ds(on) drain to source on state resistance v gs =10v, i d =33a 32 41 m ? g fs forward transconductance v ds =10v, i d =33a 71 s dynamic characteristics c iss input capacitance v gs =0v, v ds =200v, f=1mhz 7800 pf c oss output capacitance 245 c rss reverse transfer capacitance 12 t d(on) turn on delay time v ds =325v, i d =33a, r g =25?, v gs =10v (note 4,5) 80 ns t r rising time 79 t d(off) turn off delay time 680 t f fall time 101 q g total gate charge v ds =520v, v gs =10v, i d =33a (note 4,5) 181 nc q gs gate - source charge 33 q gd gate - drain charge 64 r g gate resistance v ds =0v, scan f mode 1.2 ? source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 69 a i sm pulsed source current 276 a v sd diode forward voltage drop. i s =69a, v gs =0v 1.4 v t rr reverse recovery time i s =33a, v gs =0v, di f /dt=100a/us 508 ns q rr reverse recovery charge 9 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l =47mh, i as =10a, v dd =80v, r g =25?, starting t j = 25 o c 3. i sd 33a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. s ep . 2016. rev. 2.0 3 /6 SW69N65K2 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics fig. 4. on - state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on - resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. s ep . 2016. rev. 2.0 4 /6 SW69N65K2 fig. 8. c apacitance characteristics fig. 7. maximum safe operating area fig. 9. transient thermal response curve fig. 10. gate charge test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. s ep . 2016. rev. 2.0 5 /6 SW69N65K2 v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 11 . switching time test circuit & waveform fig. 13 . peak diode recovery dv/dt test circuit & waveform fig. 12 . unclamped inductive switching test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
copyright@ semipower electronic technology co., ltd. all rights reserved. s ep . 2016. rev. 2.0 6 /6 SW69N65K2 disclaimer * all the data & curve in this document was tested in xian semipower testing & application cente r. * this product has passed the pct,tc,htrb,htgb,hast,pc and solderdunk reliability testing. * qualification standards can also be found on the web site ( http://www.semipower.com.cn ) * suggestions for improvement are appreciated, please send your suggestions to samwin@samwinsemi.com
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