q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z absolute maximum ratings t c =25 e unless otherwise specified HFH10N90Z / hfa10n90z 900v n-channel mosfet oct 2016 parameter value unit bv dss 900 v i d 10 a r ds(on), typ 1.0
qg ,typ 72 nc key parameters features * drain current limited by maximum junction temperature thermal resistance characteristics ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? 100% avalanche tested ? rohs compliant ? built-in esd diode symbol parameter to-3p to-247 unit v dss drain-source voltage 900 v i d drain current ? continuous (t c = 25 e ) 10 10 * a drain current ? continuous (t c = 100 e ) 6.3 6.3 * a i dm drain current ? pulsed (note 1) 40 40 * a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 950 mj i ar avalanche current (note 1) 9.0 a e ar repetitive avalanche energy (note 1) 29 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 290 115 w 2.32 0.92 w/ e v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ? 4 kv t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e symbol parameter to-3p to-247 unit r jc thermal resistance, junction-to-case, max. 0.43 1.08 e /w r cs thermal resistance, case-to-sink, typ. 0.24 -- e /w r ja thermal resistance, junction-to-ambient, max. 40 40 e /w HFH10N90Z to-3p hfa10n90z to-247 symbol g d s g d s
q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=18mh, i as =10a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t j =25 e unless otherwise specified symbol parameter test conditions min typ max unit on characteristics v gs gate threshold voltage v ds = v gs , i d $ 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5 a -- 1.0 1.3 ? g fs forward transconductance v ds = 50 v i d = 5 a -- 8 -- s off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 $ 900 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 $ , referenced to25 e -- 0.99 -- v/ e i dss zero gate voltage drain current v ds = 900 v, v gs = 0 v -- -- 10 $ v ds = 720 v, t c = 125 e -- -- 100 $ i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 10 $ dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2700 3510 pf c oss output capacitance -- 200 260 pf c rss reverse transfer capacitance -- 15 20 pf switching characteristics t d(on) turn-on time v ds = 450 v, i d = 10 a, r g = 25 ? (note 4,5) -- 75 160 ns t r turn-on rise time -- 85 180 ns t d(off) turn-off delay time -- 210 430 ns t f turn-off fall time -- 85 180 ns q g total gate charge v ds = 720 v, i d = 10 a, v gs = 10 v (note 4,5) -- 72 94 nc q gs gate-source charge -- 16 -- nc q gd gate-drain charge -- 32 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 10 a i sm maximum pulsed drain-source diode forward current -- -- 40 v sd drain-source diode forward voltage v gs = 0 v, i s = 10 a -- -- 1.4 v trr reverse recovery time v gs = 0 v, i s = 10 a di f /dt = 100 a/ v -- 700 -- ns qrr reverse recovery charge -- 8.2 -- &
q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 10 0 10 1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v * notes : 1. 250us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c * notes : 1. v ds = 50v 2. 250us pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) >
@ drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 o c * notes : 1. v gs = 0v 2. 250us pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 1020304050607080 0 2 4 6 8 10 12 v ds = 450v v ds = 180v v ds = 720v * note : i d = 10a v gs , gate-source voltage [v] q g , total gate charge [nc]
q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-1. maximum safe operating area for to-3p figure 9-2. maximum safe operating area for to-247 figure 10. maximum drain current vs case temperature 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 ua bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ o c]
q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z typical characteristics (continued) t 2 t 1 p dm t 2 t 1 p dm figure 11-1. transient thermal response curve for to-3p figure 11-2. transient thermal response curve for to-247 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 1.08 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 * notes : 1. z t jc (t) = 0.43 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec]
q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z package dimension 19.9 0.20 9.6 0.20 13.6 0.20 15.6 0.20 14.9 0.20 3.5 0.20 16.5 0.20 5.45typ 5.45typ 2 0.20 1 0.20 3 0.20 13.9 0.20 18.7 0.20 1.5 0.20 4.8 0.20 1.4 0.20 0.6 0.20 3 0.20 { v t z w g
q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z package dimension { v t y [ ^ g
q?v~zy??q?v?_ra]?????qcabgq HFH10N90Z_hfa10n90z version description date approved 0 new form 20161007 ygcho 1 qqq 2 qqq 3 qqq 4 qqq 5 qqq 6 qqq 7 qqq 8 qqq 9 qqq 10 qqq revision history
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