050-7479 rev a 5-2004 apt40gp90b typical performance curves the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency switchmode power supplies. low conduction loss ssoa rated low gate charge ultrafast tail current shutoff maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 900 3 4.5 6 3.2 3.9 2.7 250 1000 100 characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 250a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts ana symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l apt40gp90b 900 2030 100 50 160 160a @ 900v 543 -55 to 150 300 unit volts amps watts c parametercollector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current 7 @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. to-247 g c e g c e power mos 7 ? igbt apt40gp90b 900v downloaded from: http:///
050-7479 rev a 5-2004 apt40gp90b dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 450v i c = 40a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 900v inductive switching (25c) v cc = 600v v ge = 15v i c = 40a r g = 5 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 40a r g = 5 ? t j = +125c min typ max 3300 325 35 7.5 145 2255 160 1627 75 60 tbd 1415 825 1627 110105 tbd 23701505 unit pf v nc a ns j ns j unitc/w gm min typ max .23 n/a 5.90 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 continuous current limited by package lead temperature. apt reserves the right to change, without notice, the specifications and information contained herein. characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 downloaded from: http:///
050-7479 rev a 5-2004 apt40gp90b typical performance curves v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) t j = 25c. 250s pulse test <0.5 % duty cycle v ce = 720v v ce = 450v v ce = 180v v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 25c t j = -55c t j = 125c 250s pulse test <0.5 % duty cycle t c = -50c t c = 125c v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t c = 25c t c = 125c t c = -50c t c = 25c package limited 160140 120 100 8060 40 20 0 200180 160 140 120 100 8060 40 20 05 4 3 2 1 0 1.101.05 1.00 0.95 0.90 i c = 40a t j = 25c i c = 80a i c = 20a i c = 40a i c = 20a i c = 40a i c = 80a 0123 456 0123456 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 6 8 10 12 14 16 -55 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 160140 120 100 8060 40 20 0 1614 12 10 86 4 2 0 5 4 3 2 1 0 140120 100 8060 40 20 0 downloaded from: http:///
050-7479 rev a 5-2004 apt40gp90b v ge =15v,t j =125c v ge =15v,t j =25c t j = 125c,v ge = 15v t j = 25c,v ge = 15v v ce = 600v r g = 5 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) v ce = 600v v ge = +15v t j = 125c r g = 5 ? , l = 100 h, v ce = 600v r g = 5 ? , l = 100 h, v ce = 600v v ce = 600v t j = 25c , t j =125c r g = 5 ? l = 100 h v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v t j = 25 or 125c,v ge = 15v v ce = 600v v ge = +15v r g = 5 ? v ce = 600v v ge = +15v r g = 5 ? v ce = 600v v ge = +15v r g = 5 ? 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 0 25 50 75 100 125 i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature 120100 8060 40 20 0 140120 100 8060 40 20 0 35003000 2500 2000 1500 1000 500 0 60005000 4000 3000 2000 1000 0 e on2, 80a e off, 80a e on2, 40a e off, 40a e on2, 20a e off, 20a 2520 15 10 50 7060 50 40 30 20 10 0 60005000 4000 3000 2000 1000 0 80007000 6000 5000 4000 3000 2000 1000 0 e on2, 80a e off, 40a e on2, 40a e off, 80a e on2, 20a e off, 20a downloaded from: http:///
050-7479 rev a 5-2004 apt40gp90b typical performance curves 0.250.20 0.15 0.10 0.05 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 7,0001,000 500100 5010 180160 140 120 100 8060 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 c ies c oes c res figure 19b, transient thermal impedance model max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fm i n ( f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = 10 20 30 40 50 60 70 80 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 600v r g = 5 ? 300100 50 5 0.08960.140 0.0108f0.228f rc model case temperature( c) junctiontemp ( c) power (watts) downloaded from: http:///
050-7479 rev a 5-2004 apt40gp90b max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fm i n ( f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions t0-247 package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit t j = 125c drainvoltage drain current gate voltage 0 90% t d(off) 10% t f 90% switching energy t j = 125c drain current drainvoltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% i c a d.u.t. apt30df100 v ce figure 21, inductive switching test circuit v cc downloaded from: http:///
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