, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor BDW94/a/b/c description ? collector current -lc= -12a ? collector-emitter sustaining voltage- : vceo(sus) = -45v(min)- BDW94; -60v(min)- BDW94a -sov(min)- BDW94b; -100v(min)- BDW94c ? complement to type bdw93/a/b/c applications ? designed for hammer drivers, audio amplifier applications. absolute maximum ratings(ta=25-c) symbol vcbo vceo vebo ic icm la pc tj tstg parameter collector-base voltage collector-emitter voltage BDW94 BDW94a BDW94b BDW94c BDW94 BDW94a BDW94b BDW94c emitter-base voltage collector current-continuous collector current-peak base current collector power dissipation @ tc=25'c junction temperature storage temperature range value -45 -60 -80 -100 -45 -60 -80 -100 -5 -12 -15 -0.2 80 150 -65-150 unit v v v a a a w ?c 'c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 1.5 unit ?c/w i'ii " 1 2 3 r -vw ? l-wv ? i ? * r' 12 - 3 h 1.base 2. collector 3. emitter to-220c package j , lul a * 1 rjtl, ^t moov . \^ k \ , h v c t j"*~l g *- ! j dim a b c d f 0 h j k i q r s u v soi'. mm min 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 r / */* r|*- quality semi-conductors
silicon pnp power transistor BDW94/a/b/c electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(s3t)-2 n/be(sat)-1 vbe(sat)-1 icbo iceo iebo hpe-1 hpe-2 hfe-3 vecf-i vecf-2 parameter collector-emitter sustaining voltage BDW94 BDW94a BDW94b BDW94c .; collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current BDW94 BDW94a BDW94b BDW94c BDW94 BDW94a BDW94b BDW94c emitter cutoff current dc current gain dc current gain dc current gain c-e diode forward voltage c-e diode forward voltage conditions |_? -loama1 ir,? h |c= -5a; |b= -20ma |c=-10a;ib=-0.1a lc= -5a; ib= -20ma ic=-10a;ib=-0.1a vcb= -45v; ie= 0 vcb= -60v; ie= 0 vcb= -80v; ie= 0 vcb=-100v;ie=0 vce= -45v; ib= 0 vce= -60v; ib= 0 vce= -80v; ib= 0 vce=-100v; ib=0 veb= -5v; lc= 0 lc= -3a; vce= -3v lc= -5a; vce= -3v lc=-10a; vce=-3v if= -5a if=-10a min -45 -60 -80 -100 1000 750 100 typ. max -2.0 -3.0 -2.5 -4.0 -0.1 -1.0 -2.0 20000 -2.0 -4.0 unit v v v v v ma ma ma v v
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