2N3789 2n3791 2n3790 2n3792 silicon pnp power transistors description: the central semiconductor 2N3789, 2n3790, 2n3791, and 2n3792 are silicon pnp power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. marking: full part number 2N3789 2n3790 maximum ratings: (t c =25c) symbol 2n3791 2n3792 units collector-base voltage v cbo 60 80 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 7.0 v continuous collector current i c 10 a continuous base current i b 4.0 a power dissipation p d 150 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ? jc 1.17 c/w electrical characteristics: (t c =25c unless otherwise noted) 2N3789 2n3790 2n3791 2n3792 symbol test conditions min max min max units i cev v ce =rated v ceo , v eb =1.5v - 1.0 - 1.0 ma i cev v ce =rated v ceo , v eb =1.5v, t c =150c - 5.0 - 5.0 ma i ebo v eb =7.0v - 5.0 - 5.0 ma bv ceo i c =200ma 60 - 80 - v v ce(sat) i c =4.0a, i b =400ma (2N3789, 2n3790) - 1.0 - 1.0 v v ce(sat) i c =5.0a, i b =500ma (2n3791, 2n3792) - 1.0 - 1.0 v v be(on) v ce =2.0v, i c =5.0a (2N3789, 2n3790) - 2.0 - 2.0 v v be(on) v ce =2.0v, i c =5.0a (2n3791, 2n3792) - 1.8 - 1.8 v v be(on) v ce =4.0v, i c =10a - 4.0 - 4.0 v h fe v ce =2.0v, i c =1.0a (2N3789, 2n3790) 25 90 25 90 h fe v ce =2.0v, i c =1.0a (2n3791, 2n3792) 50 180 50 180 h fe v ce =2.0v, i c =3.0a (2N3789, 2n3790) 15 - 15 - h fe v ce =2.0v, i c =3.0a (2n3791, 2n3792) 30 - 30 - f t v ce =10v, i c =500ma, f=1.0mhz 4.0 - 4.0 - mhz to-3 case r2 (31-july 2013) www.centralsemi.com
2N3789 2n3791 2n3790 2n3792 silicon pnp power transistors lead code: 1) base 2) emitter case) collector marking: full part number to-3 case - mechanical outline r2 www.centralsemi.com r2 (31-july 2013)
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