shanghai semitech semiconductor co., ltd sm8s xxa series surface mount transient voltage su p pressors features l peak power d issipation 66 0 0 w @10 x 100 0 us pulse l glass passivated junction. l excellent clamping capability. l high surge capability l low leakage current l low forward voltage drop l available in uni - directional polarity only l t j = 175 c capability suitable for high reliability and automotive requirement l m eets iso7637 - 2 surge specification (varied by test condition) l ha logen free and rohs compliant l lead - free finis h mechanical characteristics l case: sod - block molded plastic over glass passivated junction l polarity: heatsink is anode l terminal: solder plated maximum ratings and characteristics @ 25 c ambient temperature (unless otherwise noted) parameter symbo l value units peak pulse power dissipation on 10/1000 us waveform p p pm 66 0 0 w peak pulse power dissipation on 10/1000 0 us waveform p p pm 5200 w power dissipation on infinite heat sink at t c = 25 c (fig. 1) p d 8.0 w peak pulse current of on 10/1000us waveform i ppm see next table a peak forward surge current, 8.3ms single half sine - wave (note 1.) i fsm 700 a operating junction temperature range t j - 55 to 175 c storage temperature range t stg - 55 to 175 c notes: 1. non - repetit ive current pulse derated above t a =25 c rev. 2.0, 28 - nov. - 16 www.semitech . cn sod - block cathode anode anode cathode
sm8s xxa series rev. 2.0, 28 - nov. - 16 www.semitech . cn electrical specification @ tamb 25 c device type reverse stand - off voltage breakdown voltage min. @i t breakdown voltage max. @ i t test current maximum reverse leakage @v rmw maximum reverse leakage @v rmw t j =175 c maximum clamping voltage @i pp maximum peak pulse current @10/1000us waveform (uni) v rmw (v) v br min (v) v br max (v) i t (ma) i r (ua) i r (ua) v c (v) i pp (a) sm8s10a 10.0 11.1 12.3 5 15 250 17.0 388 sm8s11a 11.0 12.2 13.5 5 10 150 18.2 363 sm8s 12a 12 .0 13.3 14.7 5 10 150 19.9 332 sm8s 13 a 13 .0 14.4 15. 9 5 10 150 21.5 307 sm8s 14 a 14 .0 15.6 17.2 5 10 150 23.2 284 sm8s 15a 15 .0 16.7 18.5 5 10 150 24.4 270 sm8s 16a 16 .0 17.8 20.5 5 10 150 26.0 254 sm8s 17a 17 .0 18.9 20.9 5 10 150 27.6 239 sm8s 18a 18 .0 20.0 22.1 5 10 150 29.2 226 sm8s 20a 20 .0 22.2 24.5 5 10 150 32.4 204 sm8s 22a 22 .0 24.4 26.9 5 10 150 35.5 186 sm8s 24a 24 .0 26.7 29.5 5 10 150 38.9 170 sm8s 26a 26 .0 28.9 31.9 5 10 150 42.1 157 sm8s 28a 28 .0 31.1 34.4 5 10 150 45.4 145 sm8s 30a 30 .0 33.3 36.8 5 10 150 48.4 136 sm8s 33a 33 .0 36.7 40.6 5 10 150 53.3 124 sm8s 36a 36 .0 40.0 4 4.2 5 10 150 58.1 114 sm8s 40a 40 .0 44.4 49.1 5 10 150 64.5 102 sm8s 43a 43 .0 47.8 5 2.8 5 10 150 69.4 95.1 for all types maximum v f = 1.8 v at i f = 100 a measured on 8.3 ms single half - sine - wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. i - v curve characteristics un i - directional
sm8s xxa series rev. 2.0, 28 - nov. - 16 www.semitech . cn p ppm peak pulse power dissipation - max power dissipation v rwm reverse stand - off voltage - maximum voltage that can be applied to tvs without operation v br breakdown voltage C maximum voltage that flows though the tvs at a specified current (i t ) v c clamping voltage C peak voltage measured across the tvs at a specified i ppm (peak impulse current) i r reverse leakage current C current measured at v r v f forward voltage drop for uni - directional ratings and characteristic curves ( t a =25 c unless otherwise noted ) fig.1 - pulse derating cure fig.2 - peak pulse power rating fig.3 C pulse waveform fig . 4 C load dump power characteristics (10ms exponential waveform)
sm8s xxa series rev. 2.0, 28 - nov. - 16 www.semitech . cn package outline dimensions and pad layouts smd - block
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