maximum ratings all ratings: t c = 25c unless otherwise specified. unit volts amps volts watts w/c c amps mj unit volts amps ohms ana volts min typ max 100225 0.007 250 1000 100 24 APT10M07JVFR 100225 900 30 40 700 5.6 -55 to 150 300225 50 3600 APT10M07JVFR 100v 225a 0.007 ?? ?? ? characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5.0ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) g d s sot-227 g s s d isotop ? "ul recognized" caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. fast recovery body diode 100% avalanche tested lower leakage popular sot-227 package faster switching fredfet power mos v ? 050-5846 rev a 9-2004 downloaded from: http:///
dynamic characteristics APT10M07JVFR 050-5846 rev a 9-2004 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.20.1 0.050.01 0.0050.001 0.0005 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 142h, r g = 25 ? , peak i l = 225a 2 pulse test: pulse width < 380 s, duty cycle < 2%apt reserves the right to change, without notice, the specifications and information contained herein. source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/s) peak recovery current(i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 ? min typ max 18000 21600 6800 9500 2800 4200 700 1050 130 195 300 435 25 50 60 120 80 120 20 40 unit pf nc ns min typ max 225900 1.3 5 t j = 25c 150 250 t j = 125c 250 500 t j = 25c 0.9 t j = 125c 2.5 t j = 25c 12 t j = 125c 20 thermal / package characteristics symbol r jc r ja v isolation torque min typ max 0.18 40 2500 13 unit c/w volts lbin characteristicjunction to case junction to ambient rms voltage (50-60 hz sinusoidal waveform from terminals to mounting base for 1 min.) maximum torque for device mounting screws and electrical terminations. downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 10 20 30 40 50 0 0.5 1.0 1.5 2.0 2.5 02468 01 0 02 0 03 0 04 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 APT10M07JVFR i d = 0.5 i d [cont.] v gs = 10v 360300 240 180 120 60 0 1.101.05 1.00 0.95 0.90 0.85 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 360300 240 180 120 60 0 360300 240 180 120 60 0 250200 150 100 50 0 2.001.75 1.50 1.25 1.00 0.75 0.50 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v v gs =7v, 8v, 9v, 10v & 15v 6v 7v 5.5v 4.5v 5v 8v 6v 5.5v 4.5v 5v 6.5v v gs =15v 6.5v 10v 9v t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c normalized to v gs = 10v @ 0.5 i d [cont.] 050-5846 rev a 9-2004 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) APT10M07JVFR t c =+25c t j =+150c single pulse operation here limited by r ds (on) 1 5 10 50 100 .01 .1 1 10 50 0 200 400 600 800 1000 1200 1400 0 0.4 0.8 1.2 1.6 2.0 50,00010,000 5,0001,000 500100 5010 51 v ds =50v v ds =20v v ds =80v i d = 100a 10s10ms 100ms dc 1ms t j =+150c t j =+25c sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source source terminals are shortedinternally. current handling capability is equal for either source terminal. isotop ? is a registered trademark of sgs thomson. "ul recognized" file no. e145592 c rss c oss c iss 1,000 500100 5010 51 2016 12 84 0 100s 050-5846 rev a 9-2004 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. downloaded from: http:///
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