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september 2013 doc id 15561 rev 3 1/22 1 VNS14NV04P-E "omnifet ii" fully autoprotected power mosfet features linear current limitation thermal shutdown short circuit protection integrated clamp low current drawn from input pin diagnostic feedback through input pin esd protection direct access to the gate of the power mosfet (analog driving) compatible with standard power mosfet description the VNS14NV04P-E is monolithic device made using stmicroelectronics? vipower? m0 technology, intended for replacement of standard power mosfets in dc to 50 khz applications. built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. fault feedback can be detected by monitoring the voltage at the input pin. type r ds(on) i lim v clamp VNS14NV04P-E 35 m 12 a 40 v table 1. device summary package order codes tube tape and reel so-8 VNS14NV04P-E vns14nv04ptr-e www.st.com
contents VNS14NV04P-E 2/22 doc id 15561 rev 3 contents 1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 package thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.1 so-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.1 ecopack ? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.2 so-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.3 so-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
VNS14NV04P-E list of tables doc id 15561 rev 3 3/22 list of tables table 1. device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table 2. absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 3. thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 4. electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 5. so-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 table 6. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
list of figures VNS14NV04P-E 4/22 doc id 15561 rev 3 list of figures figure 1. block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 2. connection diagram so-8 package (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 figure 3. current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 figure 4. switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 5. test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 6. unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 7. unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 8. input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 9. source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 10. static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 11. derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 12. static drain-source on resistance vs. input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 13 figure 13. static drain-source on resistance vs. input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 13 figure 14. transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 15. static drain-source on resistance vs. id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 16. transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 17. turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 18. turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 19. input voltage vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 20. turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 figure 21. turn-off drain source voltage slope (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 figure 22. capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 23. switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 24. switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 25. output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 26. normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 27. normalized input threshold voltage vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 28. current limit vs. junction temperatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 29. step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 30. so-8 pc board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 31. rthj-amb vs pcb copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 17 figure 32. so-8 package dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 33. so-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
VNS14NV04P-E block diagram doc id 15561 rev 3 5/22 1 block diagram figure 1. block diagram overvoltage gate linear drain source clamp 1 2 3 current limiter control over temperature input
pin description VNS14NV04P-E 6/22 doc id 15561 rev 3 2 pin description figure 2. connection diagram so-8 package (top view) drain drain drain drain input source source source 1 4 5 8
VNS14NV04P-E electrical specification doc id 15561 rev 3 7/22 3 electrical specification figure 3. current and voltage conventions 3.1 absolute maximum rating i d i in v in v ds r in source drain input table 2. absolute maximum rating symbol parameter value unit so-8 v ds drain-source voltage (v in =0 v) internally clamped v v in input voltage internally clamped v i in input current +/-20 ma r in min minimum input series impedance 10 i d drain current internally limited a i r reverse dc output current -15 a v esd1 electrostatic discharge (r=1.5 k , c=100 pf) 4000 v v esd2 electrostatic discharge on output pin only (r=330 , c=150 pf) 16500 v p tot total dissipation at t c =25 c 4.6 w e max maximum switching energy (l=0.4 mh; rl=0 ; v bat =13.5 v; t jstart =150 c; i l =18 a) mj t j operating junction temperature internally limited c t c case operating temperature internally limited c t stg storage temperature -55 to 150 c
electrical specification VNS14NV04P-E 8/22 doc id 15561 rev 3 3.2 thermal data 3.3 electrical characteristics -40 < t j < 150 c unless otherwise specified. table 3. thermal data symbol parameter value unit so-8 r thj-case thermal resistance junction-case max c/w r thj-lead thermal resistance junction-lead max 27 c/w r thj-amb thermal resistance junction-ambient max 90 (1) c/w 1. when mounted on a standard single-sided fr4 board with 0.5 cm 2 of cu (at least 35 m thick) connected to all drain pins. horizontal mounting and no artificial air flow. table 4. electrical characteristics symbol parameter test conditions min typ max unit off v clamp drain-source clamp voltage v in =0 v; i d =7 a 40 45 55 v v clth drain-source clamp threshold voltage v in =0 v; i d =2 ma 36 v v inth input threshold voltage v ds =v in ; i d =1 ma 0.5 2.5 v i iss supply current from input pin v ds =0 v; v in =5 v 100 150 a v incl input-source clamp voltage i in =1 ma i in =-1 ma 6 -1.0 6.8 8 -0.3 v i dss zero input voltage drain current (v in =0 v) v ds =13 v; v in =0 v; t j =25 c v ds =25 v; v in =0 v 30 75 a on r ds(on) static drain-source on resistance v in = 5 v i d = 7 a t j = 25 c v in = 5 v i d = 7 a 35 70 m dynamic (t j =25 c, unless otherwise specified) g fs (1) forward transconductance v dd = 13 v i d = 7 a 18 s c oss output capacitance v ds = 13 v f = 1 mhz v in = 0 v 400 pf switching t d(on) turn-on delay time v dd = 15 v i d = 7 a v gen = 5 v r gen = r in min =10 (see figure 4 ) 80 250 ns t r rise time 350 1000 ns t d(off) turn-off delay time 450 1350 ns t f fall time 150 500 ns
VNS14NV04P-E electrical specification doc id 15561 rev 3 9/22 t d(on) turn-on delay time v dd = 15 v i d = 7 a v gen = 5 v r gen = 2.2 k (see figure 4 ) 1.5 4.5 s t r rise time 9.7 30.0 s t d(off) turn-off delay time 25.0 s t f fall time 10.2 30.0 s (di/dt) on turn-on current slope v dd = 15 v i d = 7 a v gen = 5 v r gen = r in min =10 16 a/s q i total input charge v dd = 12 v i d = 7 a v in = 5 v; i gen = 2.13 ma (see figure 8 ) 36.8 nc source drain diode v sd (1) forward on voltage i sd = 7 a v in = 0 v 0.8 v t rr reverse recovery time i sd = 7 a; di/dt = 40 a/s v dd = 30 v l = 200 h (see test circuit, figure 5 ) 300 ns q rr reverse recovery charge 0.8 c i rrm reverse recovery current 5 a protection i lim drain current limit v in = 5 v; v ds = 13 v 12 18 24 a t dlim step response current limit v in = 5 v; v ds = 13 v 45 s t jsh over temperature shutdown 150 175 200 c t jrs over temperature reset 135 c i gf fault sink current v in = 5 v; v ds = 13 v; t j = t jsh 10 15 20 ma e as single pulse avalanche energy starting t j = 25 c; v dd = 24 v v in = 5 v; r gen = r in min = 10 ; l = 24 mh (see figure 6 and figure 7 ) 400 mj 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % table 4. electrical characteristics (continued) symbol parameter test conditions min typ max unit
protection features VNS14NV04P-E 10/22 doc id 15561 rev 3 4 protection features during normal operation, the input pin is electrically connected to the gate of the internal power mosfet through a low impedance path. the device then behaves like a standard power mosfet and can be used as a switch from dc up to 50 khz. the only difference from the user?s standpoint is that a small dc current i iss (typ. 100 a) flows into the input pin in order to supply the internal circuitry. the device integrates: overvoltage clamp protection: internally set at 45 v, along with the rugged avalanche characteristics of the power mosfet stage give this device unrivalled ruggedness and energy handling capability. this feature is mainly important when driving inductive loads. linear current limiter circuit: limits the drain current i d to i lim whatever the input pin voltages. when the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the over temperature threshold t jsh . over temperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. the location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. over temperature cutout occurs in the range 150 to 190 c, a typical value being 170 c. the device is automatically restarted when the chip temperature falls of about 15 c below shutdown temperature. status feedback: in the case of an over temperature fault condition (t j > t jsh ), the device tries to sink a diagnostic current i gf through the input pin in order to indicate fault condition. if driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. if the drive impedance is high enough so that the input pin driver is not able to supply the current i gf , the input pin will fall to 0 v. this will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current i iss . additional features of this device are esd protection according to the human body model and the ability to be driven from a ttl logic circuit.
VNS14NV04P-E protection features doc id 15561 rev 3 11/22 figure 4. switching time test circuit for resistive load figure 5. test circuit for diode recovery times
protection features VNS14NV04P-E 12/22 doc id 15561 rev 3 figure 6. unclamped inductive load test circuits figure 7. unclamped inductive waveforms figure 8. input charge test circuit
VNS14NV04P-E protection features doc id 15561 rev 3 13/22 figure 9. source-drain diode forward characteristics figure 10. static drain source on resistance figure 11. derating curve figure 12. static drain-source on resistance vs. input voltage (part 1/2) figure 13. static drain-source on resistance vs. input voltage (part 2/2) figure 14. transconductance
protection features VNS14NV04P-E 14/22 doc id 15561 rev 3 figure 15. static drain-source on resistance vs. id figure 16. transfer characteristics figure 17. turn-on current slope (part 1/2) figure 18. turn-on current slope (part 2/2) figure 19. input voltage vs. input charge figure 20. turn-off drain source voltage slope (part 1/2)
VNS14NV04P-E protection features doc id 15561 rev 3 15/22 figure 21. turn-off drain source voltage slope (part 2/2) figure 22. capacitance variations figure 23. switching time resistive load (part 1/2) figure 24. switching time resistive load (part 2/2) figure 25. output characteristics figure 26. normalized on resistance vs. temperature
protection features VNS14NV04P-E 16/22 doc id 15561 rev 3 figure 27. normalized input threshold voltage vs. temperature figure 28. current limit vs. junction temperatures figure 29. step response current limit
VNS14NV04P-E package thermal data doc id 15561 rev 3 17/22 5 package thermal data 5.1 so-8 thermal data figure 30. so-8 pc board 1. layout condition of r th and z th measurements (pcb fr4 area=58 mm x 58 mm, pcb thickness=2 mm, cu thickness=35 m, copper areas: 0.14 cm 2 , 0.6 cm 2 , 1.6 cm 2 ). figure 31. r thj-amb vs pcb copper area in open box free air condition so-8 at 4 pins connected to tab 70 75 80 85 90 95 100 105 110 00.511.522.5 pcb cu heatsink area (cm^2) rthj_amb (oc/w)
package and packing information VNS14NV04P-E 18/22 doc id 15561 rev 3 6 package and packing information 6.1 ecopack ? in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 6.2 so-8 mechanical data table 5. so-8 mechanical data dim. mm min. typ. max. a 1.75 a1 0.10 0.25 a2 1.25 b 0.28 0.48 c 0.17 0.23 d (1) 1. dimension ?d? does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both side). 4.80 4.90 5.00 e 5.80 6.00 6.20 e1 (2) 2. dimension ?e1? does not include in terlead flash or protrusions. interl ead flash or protrusions shall not exceed 0.25 mm per side. 3.80 3.90 4.00 e 1.27 h 0.25 0.50 l 0.40 1.27 l1 1.04 k 0 8 ccc 0.10
VNS14NV04P-E package and packing information doc id 15561 rev 3 19/22 figure 32. so-8 package dimension 0016023 d
package and packing information VNS14NV04P-E 20/22 doc id 15561 rev 3 6.3 so-8 packing information figure 33. so-8 tube shipment (no suffix) figure 1. tape and reel shipment (suffix ?tr?) all dimensions are in mm. base q.ty 100 bulk q.ty 2000 tube length ( 0.5) 532 a 3.2 b 6 c ( 0.1) 0.6 c b a all dimensions are in mm. base q.ty 2500 bulk q.ty 2500 a (max) 330 b (min) 1.5 c ( 0.2) 13 f 20.2 g (+ 2 / -0) 12.4 n (min) 60 t (max) 18.4 tape dimensions according to electronic industries association (eia) standard 481 rev. a, feb. 1986 all dimensions are in mm. tape width w 12 tape hole spacing p0 ( 0.1) 4 component spacing p 8 hole diameter d ( 0.1/-0) 1.5 hole diameter d1 (min) 1.5 hole position f ( 0.05) 5.5 compartment depth k (max) 4.5 hole spacing p1 ( 0.1) 2 top cover tape end start no components no components components 500mm min 500mm min empty components pockets saled with cover tape. user direction of feed reel dimensions
VNS14NV04P-E revision history doc id 15561 rev 3 21/22 7 revision history table 6. document revision history date revision changes 15-apr-2009 1 initial release. 01-mar-2011 2 updated table 1: device summary inserted section 6.3: so-8 packing information 18-sep-2013 3 updated disclaimer.
VNS14NV04P-E 22/22 doc id 15561 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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