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  1 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 1. product overview 1.1 general description awb519, a wide - band linear amplifier mmic, has high linearity and low noise over a wide range of frequency from 5 mhz to 1200 mhz, being suitable for use in the fiber receiver, distribution amplifiers and drop amplifiers of catv. the amplifier is available in a n sot89 package and passes through the stringent 100% dc & rf test via an automated test handler. 1.2 features ? 5 ~ 1200 mhz bandwidth ? 20.4 db gain at 500 mhz ? output power: 99 db ? v ? 2.6 db nf at 500mhz ? robust under hard operating conditions ? +8 v, 135 ma supply 1.3 applications ? catv forward at 50 ~ 1200 mhz ? catv reverse at 5 ~ 300 mhz ? optical node, ftth, rfog 1.4 package profile & rohs compliance sot89 , 4.5x4.0 mm 2 , surface mount rohs - compliant awb519 data sheet 5 ~ 1200 mhz wide - band catv linear amplifier mmic
2 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 2. summary on product performances 2.1 typical performance supply voltage = +8 v, t a = +25 ? c, z o = 75 ?? ? parameter reverse forward unit frequency 5 50 300 50 500 1000 mhz noise figure - 2.5 2.7 2.5 2.6 2.5 db gain 20.9 21.1 20.3 21.0 20.4 18.9 db s11 - 20.5 - 25.0 - 16.0 - 17.0 - 16.0 - 18.0 db s22 - 20.0 - 27.0 - 14.5 - 17.5 - 20.0 - 16 .0 db cso 1) - 61 dbc ctb 1) - 73 dbc current 135 ma device voltage +8 v 1) pout = 99 db ? v for cenelec - 42. 2.2 product specification supply voltage = +8 v, t a = +25 ? c, z o = 75 ?? ? parameter min typ max unit frequency 500 mhz noise figure 2.6 2.9 db gain 19.4 20.4 db s11 - 13 - 16 .0 db s22 - 17 - 20.0 db current 115 135 155 ma device voltage +8 v 2.3 pin configuration pin description simplified outline 1 rf_in 2 ground 3 rf_out & bias
3 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 2.4 absolute maximum ratings parameters max. ratings operation case temperature - 40 to ? 85 ? c storage temperature - 40 to ? 150 ? c device voltage +9 v maximum current 235 ma operation junction temperature +150 ? c input rf power (cw, 75 ? matched) +25 dbm 2.5 thermal resistance symbol description typ unit r th thermal resistance from junction to lead 42 ? c/w 2.6 esd classification & moisture sensitivity level esd clas sification hbm class 1b voltage level: 750 v mm class a voltage level: 100 v caution: gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. moisture sensitivity level m sl 3 at 260 ? c reflow (intentionally blanked)
4 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 3. application : 50 ~ 1000 mhz (catv forward , v supply = +8 v ) 3.1 application circuit & evaluation board bill of material symbol value size description manufacturer a wb 51 9 - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c3 1.2 p f 0 603 matching capacitor murata c4 1 0 ? f 0805 decoupling capacitor murata l1 1 ? h 1206 rf choke inductor murata l2 10 nh 0603 matching inductor murata l3 5.6 nh 0603 matching inductor murata pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 89 - a10 c1 l1 l3 l2 c4 c2 c3 rf in awb519 vdevice = +8 v rf out
5 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 3.2 performance table supply voltage = +8 v, t a = +25 ? c, z o = 75 ?? ? parameter forward unit frequency 50 500 860 1000 mhz noise figure 2.5 2.6 2.6 2.5 db gain 21.0 20.4 19.7 18.9 db s11 - 17.0 - 16.0 - 19.0 - 18.0 db s22 - 17.5 - 20.0 - 17.0 - 16.0 db cso 1) 61 dbc ctb 1) 73 dbc current 135 ma device voltage +8 v 1) pout = 99 db ? v for cenelec - 42. 3.3 plot of s - parameter & stability factor 0 200 400 600 800 1000 1200 frequency (mhz) -60 -50 -40 -30 -20 -10 0 10 20 30 40 s-parameters (db) 0 1 2 3 4 5 6 7 8 9 10 stability factor, k s21 s12 s11 s22 k
6 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 3.4 plots of noise figure and performances with temperature 0 200 400 600 800 1000 1200 frequency (mhz) 15 16 17 18 19 20 21 22 gain (db) -40 c +25 c +85 c 0 200 400 600 800 1000 1200 frequency (mhz) -40 -30 -20 -10 0 s11 (db) -40 c +25 c +85 c 0 200 400 600 800 1000 1200 frequency (mhz) -50 -40 -30 -20 -10 0 s22 (db) -40 c +25 c +85 c -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 5 10 15 20 25 30 gain (db) frequency = 500 mhz -60 -40 -20 0 20 40 60 80 100 temperature (c) 120 125 130 135 140 145 150 current (ma) 0 200 400 600 800 1000 1200 frequency (mhz) 0 1 2 3 4 5 nf (db) nf
7 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 (intentionally blanked) -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 1 2 3 4 5 nf (db) frequency = 500 mhz
8 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 4. application : 50 ~ 1 2 00 mhz (catv forward , v supply = +8 v ) 4.1 application circuit & evaluation board bill of material symbol value size description manufacturer a wb 51 9 - - mmic amplifier asb c1, c4 1 ? f 0603 dc block ing capacitor murata c2 0.5 p f 0 603 matching capacitor murata c3 33 p f 0 603 matching capacitor murata c5 1 0 ? f 0805 decoupling capacitor murata l1 6 . 8 nh 0603 matching inductor murata l2 1 ? h 1206 rf choke inductor murata l3 4.7 nh 0603 matching inductor murata r1 18 ? 0603 matching resistor samsung pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 89 - a10 c1 c2 c3 c4 c5 l1 l2 l3 r1 awb519 rf in vdevice = +8 v rf out
9 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 4.2 performance table supply voltage = +8 v, t a = +25 ? c, z o = 75 ?? ? parameter forward unit frequency 50 500 1002 1200 mhz noise figure 3.4 2.4 2.1 2.7 db gain 20.0 20.1 19.0 18.3 db s11 - 17 - 14 - 19 - 18 db s22 - 14 - 21 - 16 - 13 db current 135 ma device voltage +8 v 4.3 plot of s - parameter & stability factor 0 200 400 600 800 1000 1200 frequency (mhz) -60 -50 -40 -30 -20 -10 0 10 20 30 40 s-parameters (db) 0 1 2 3 4 5 6 7 8 9 10 stability factor, k s21 s12 s11 s22 k
10 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 5. application : 5 ~ 300 mhz (catv reverse, v supply = +8 v) 5.1 application circuit & evaluation board bill of material symbol value size description manufacturer awb51 9 - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c 3 1 0 ? f 0805 decoupling capacitor murata l1 22 ? h 1 206 rf choke inductor murata l2 6 . 8 ? h 0603 matching inductor samsung r1 300 ? 0603 matching resistor samsung pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 89 - b2 l1 r1 c1 l2 rf out vdevice = +8 v awb519 rf in c2 c3
11 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 5.2 performance table supply voltage = +8 v, t a = +25 ? c, z o = 75 ?? ? parameter reverse unit frequency 5 50 300 mhz noise figure - 2.5 2.7 db gain 20.9 21.1 20.3 db s11 - 20.5 - 25.0 - 16.0 db s22 - 20.0 - 27.0 - 14.5 db output p1db 24.5 25.5 25.5 dbm output ip3 1) 36.0 40.5 42.0 dbm output ip2 1), 2) 55 53 57 dbm current 135 ma device voltage +8 v 1) oip3 and oip2 are measured with two tones at the output powe r of +10 dbm/tone separated by 6 mhz. 2) oip2 is measured at f1+f2 frequency. 5.3 plot of s - parameter & stability factor 0 50 100 150 200 250 300 frequency (mhz) -60 -50 -40 -30 -20 -10 0 10 20 30 40 s-parameters (db) 0 1 2 3 4 5 6 7 8 9 10 stability factor, k s21 s12 s11 s22 k
12 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 5.4 plots of noise figure and performances with temperature 0 50 100 150 200 250 300 frequency (mhz) 17 18 19 20 21 22 23 gain (db) -40 c +25 c +85 c 0 50 100 150 200 250 300 frequency (mhz) -50 -40 -30 -20 -10 0 s11 (db) -40 c +25 c +85 c 0 50 100 150 200 250 300 frequency (mhz) -40 -30 -20 -10 0 s22 (db) -40 c +25 c +85 c -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 5 10 15 20 25 30 gain (db) frequency = 50 mhz -60 -40 -20 0 20 40 60 80 100 temperature (c) 120 125 130 135 140 145 150 current (ma) 0 50 100 150 200 250 300 frequency (mhz) 0 1 2 3 4 5 nf (db) nf
13 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 (intentionally blanked) -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 1 2 3 4 5 nf (db) frequency = 50 mhz
14 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 6. application : 5 0 ~ 1000 mhz (catv m in vswr, v supply = +8 v) 6.1 application circuit & evaluation board bill of material symbol value size description manufacturer awb51 9 - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c 3 1 pf 0 603 matching capacitor murata c 4 33 pf 0603 matching capacitor murata c 5 1 0 ? f 0805 decoupling capacitor murata l1 1 ? h 1 206 rf choke inductor murata l2 8.2 nh 0603 matching inductor samsung l 3 6.8 nh 0603 matching inductor samsung r1 3.9 ? 0603 matching resistor samsung r2 16 ? 0603 matching resistor samsung pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 89 - b2 r1 c4 rf in rf out vdevice = +8 v r2 c1 c3 c2 c5 l2 l3 l1 awb519
15 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 6.2 performance table supply voltage = +8 v, t a = +25 ? c, z o = 75 ?? ? parameter reverse unit frequency 5 0 500 1000 mhz noise figure 2.6 2.5 2.5 db gain 19.8 19.7 18.4 db s11 - 18 - 18 - 19 db s22 - 20 - 19 - 18 db output p1db 24.5 24.5 25.0 dbm output ip3 1) 41 41 41 dbm output ip2 1), 2) 55 61 51 dbm current 135 ma device voltage +8 v 1) oip3 and oip2 are measured with two tones at the output powe r of +10 dbm/tone separated by 6 mhz. 2) oip2 is measured at f1+f2 frequency. 6.3 plot of s - parameter & stability factor 0 200 400 600 800 1000 1200 frequency (mhz) -60 -50 -40 -30 -20 -10 0 10 20 30 40 s-parameters (db) 0 1 2 3 4 5 6 7 8 9 10 stability factor, k s21 s11 s22 s12 k
16 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 7. package outline (sot89, 4.5x4.0x1.5 mm) 8. surface mount recommendation (in mm) symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3.64 --- 4.25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 a wb51 9 pxxxx lot no. part no. n ote 1. the number and size of ground via holes in a circuit board are critical for thermal and rf grounding considerations. 2. r ecommend ed is that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performanc e, as shown in the drawing at the left side.
17 / 17 asb inc. ? sales@asb .co.kr february 2017 awb51 9 9. recommended soldering reflow profile 10. family products information asbs awb - series single - ended catv amplifiers are available in different gain levels such as 12 db, 17 db, and 20 db in which they are categorized by two groups according to the device voltage, 5 v and 8 v, so that a user can select the amplifier for different gain stages to design their system with ease. in addition, awb3xx group for 5 v and awb5xx group for 8 v are provided by almost the same external matching circuit and in a sot89 package. part number description package type awb312 5 ~ 6 v, 12 db gain catv amplifier sot89 awb317 5 v, 17 db gain catv amplifier sot89 awb319 5 v, 20 db gain catv amplifier sot89 awb512 8 v, 12 db gain catv amplifier sot89 awb517 8 v, 17 db gain catv amplifier sot89 awb519 8 v, 20 db gain catv amplifier sot89 (end of datasheet) copyright ? 2013 - 2017 asb inc. all rights reserved. datasheet subject to change without notice. asb assumes no responsibility for any errors which may appear in this datasheet. no part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of asb. 20~40 sec 260 ? c 200 ? c 150 ? c 60~180 sec ramp - up (3 ? c/sec) ramp - down (6 ? c/sec)


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