tm QSE256, qse257, qse258, qse259 plastic silicon optologic?photosensor august 2012 ?004 fairchild semiconductor corporation www.fairchildsemi.com QSE256, qse257, qse258, qse259 rev. 1.0.1 QSE256, qse257, qse258, qse259 plastic silicon optologic photosensor features bipolar silicon ic package type: sidelooker medium wide reception angle, 50 package material and color: black epoxy daylight filter high sensitivity direct ttl/lsttl interface description the qse25x family are optologic?ics which feature a schmitt trigger at output which provides hyster- esis for noise immunity and pulse shaping. the basic building block of this ic consists of a photodiode, a linear amplifier, voltage regulator, schmitt trigger and four out- put options. the ttl/lsttl compatible output can drive up to ten ttl loads over supply currents from 4.5 to 16.0 volts. the devices are marked with a color stripe for easy identification. package dimensions 0.25 0.51 4.38 4.62 gnd vcc ? vout 1.45 1.71 2.34 2.74 1.17 1.37 0.52 0.76 12.7 min 1.14 1.40 4.35 5.85 2.15 2.35 1.39 1.65 5 typ on all sides 0.67 0.77 note: 1. dimensions for all drawings are in millimeters. part number de?itions color code QSE256 totem-pole, buffer output red qse257 totem-pole, inverter output yellow qse258 open-collector, buffer output green qse259 open-collector, inverter output blue input/output table part number light output QSE256 on high off low qse257 on low off high qse258 on high off low qse259 on low off high
QSE256, qse257, qse258, qse259 plastic silicon optologic?photosensor ?004 fairchild semiconductor corporation www.fairchildsemi.com QSE256, qse257, qse258, qse259 rev. 1.0.1 2 block diagrams absolute maximum ratings (t a = 25? unless otherwise speci?d) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. notes: 1. derate power dissipation linearly 2.50mw/? above 25?. 2. rma flux is recommended. 3. methanol or isopropyl alcohols are recommended as cleaning agents. 4. soldering iron tip 1/16" (1.6mm) minimum from housing. symbol parameter rating unit t opr operating temperature -40 to +85 ? t stg storage temperature -40 to +100 ? t sol-i soldering temperature (iron) (2,3,4) 240 for 5 sec ? t sol-f soldering temperature (flow) (2,3) 260 for 10 sec ? i o output current 50 ma v cc supply voltage 4.0 to 16 v v o output voltage 35 v p d power dissipation (1) 100 mw gnd regulator voltage v cc v out la la regulator voltage gnd v out v cc la regulator voltage gnd v out v cc regulator voltage la v cc v out gnd QSE256 totem-pole outp ut buffer qse257 totem-pole outp ut invert er qse258 open-collector o utput bu ffer qse259 open-collector o utput inverter
QSE256, qse257, qse258, qse259 plastic silicon optologic?photosensor ?004 fairchild semiconductor corporation www.fairchildsemi.com QSE256, qse257, qse258, qse259 rev. 1.0.1 3 electrical characteristics (t a = -40? to +85?, v cc = 4.5v to 5.5v) note: 5. = 880nm (algaas). symbol parameter test conditions min. typ. max. units ee(+) positive going threshold irradiance (5) t a = 25? 0.025 0.250 mw/cm 2 ee(+)/ee(-) hysteresis ratio 1.10 2.00 i cc supply current (5) ee = 0 or 0.3mw/cm 2 5.0 ma peak to peak ripple which will cause false triggering f = dc to 50mhz 2.00 v QSE256 (buffer totem pole) v oh high level output voltage (5) ee = 0.3mw/cm 2 , i oh = -10ma 2.4 v v ol low level output voltage ee = 0, i ol = 16ma 0.40 v qse257 (inverter totem pole) v oh high level output voltage ee = 0, i oh = -10ma 2.4 v v ol low level output voltage (5) ee = 0.3mw/cm 2 , i ol = 16ma 0.40 v qse258 (buffer open collector) i oh high level output current (5) ee = 0.3mw/cm 2 , v oh = 30v 100 ? v ol low level output voltage ee = 0, i ol = 16ma 0.40 v qse259 (inverter open collector) i oh high level output current ee = 0, v oh = 30v 100 ? v ol low level output voltage (5) ee = 0.3mw/cm 2 , i ol = 16ma 0.40 v QSE256, qse257 t r , t f output rise, fall times ee = 0 or 0.3mw/cm 2 , f = 10khz, dc = 50%, r l = 360 (5) 70 ns t phl , t plh propagation delay 6.0 ? qse258, qse259 t r , t f output rise, fall times ee = 0 or 0.3mw/cm 2 , f = 10khz, dc = 50%, r l = 360 (5) 100 ns t phl , t plh propagation delay 6.0 ?
QSE256, qse257, qse258, qse259 plastic silicon optologic?photosensor ?.0.1 fairchild semiconductor corporation www.fairchildsemi.com QSE256, qse257, qse258, qse259 rev. 1.0.1 4 typical performance curves (sensor coupled to qee113 emitter) fig. 4 normalized threshold current vs. supply voltage v cc - supply voltage (v) 0246810121416 i f - normaliz ed threshold current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 normalized to: turn on threshold v cc = 5 v t a = 25 c i f (on) i f (off) fig. 1 output voltage vs. input current (inverters) i f - input current (ma) i f - input current (ma) 012345 v o - output voltage (v) v o - output voltage (v) 0 1 2 3 4 5 6 v oh v ol v cc = 5 v r l = 270 t a = 25 c d = 4mm i f (on) i f (off) fig. 3 threshold current vs. distance d - distance (mm) 02 46 8 101214 i f(on) - normalized threshold current 10 8 6 4 2 1.0 0.8 0.6 0.4 0.2 0.1 fig. 2 output voltage vs. input current (buffers) 012345 0 1 2 3 4 5 6 v ol v oh i f (off) i f (on) v cc = 5 v r l = 270 t a = 25 c d = 4mm normalized to: v cc = 5 v r l = 270 t a = 25 c d = 4mm pulsed 100hz pw = 100 s
QSE256, qse257, qse258, qse259 plastic silicon optologic?photosensor ?.0.1 fairchild semiconductor corporation www.fairchildsemi.com QSE256, qse257, qse258, qse259 rev. 1.0.1 5 typical performance curves (sensor coupled to qee113 emitter) (continued) fig. 6 low output voltage vs. output current i o - output current (ma) 110 v ol - output v oltage, low (v) 0.01 0.1 1 v cc = 5 v t a = 25 c i f = 10 ma fig. 7 response time vs. forward current i f - forward current (ma) 0 5 10 15 20 response delay time ( s) 0 1 2 3 4 5 t phl t plh v cc = 5 v r l = 270 t a = 25 c i f pulsed t = 10 ms duty cycle = 50% fig. 5 normalized threshold current vs. ambient temperature t a - ambient temperature ( ?c) -40 -20 0 20 40 60 80 100 i f - nor malized threshold current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i f (on) i f (off) i f (off) i f (on) normalized to: v cc = 5 v t a = 25 c
QSE256, qse257, qse258, qse259 plastic silicon optologic?photosensor ?.0.1 fairchild semiconductor corporation www.fairchildsemi.com QSE256, qse257, qse258, qse259 rev. 1.0.1 6 c 2 r 2 r 1 1 c .1 uf bypass 5v gnd pulse generator v = 5v f = 10 khz d.c. = 50% o 1 r = 360 r = 180 2 1 c = 15 pf c = 20 pf 2 stray wire capacitance c and c include probe and 12 fig. 8 switching speed test circuit plh r t phl t 50% 90% 10% oh v ol v 10% 90% 50% output v o t f t 0 ma oh phl 0 ma t v plh 50% t 10% 90% 90% 10% r t f t output o v ol v fig. 9 switching times definition for buffers fig. 10 switching times definition for inverters
QSE256, qse257, qse258, qse259 plastic silicon optologic?photosensor ?004 fairchild semiconductor corporation www.fairchildsemi.com QSE256, qse257, qse258, qse259 rev. 1.0.1 7
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