29.11.2011 guvb - s11 sd 1 of 2 guvb - s11 s d technical data uv - b sensor features applications ? aluminium gallium nitride based material ? schottky - type photodiode ? photovoltaic mode operation ? good visible blindness ? high responsivity & low dark current ? uv index monitoring ? uv - b lamp mo nitoring absolute maximum ratings item symbol value unit forward current i f 1 ma reverse voltage v r 3 v operating temperature t op - 30 ? +85 c storage temperature t st - 40 ? +90 c soldering temperature * t sol 260 c * must be completed within 1 0 seconds characteristics (25c) item symbol test conditions min. typ. max. unit dark current i d v r = 0.1 v - - 1 na photo current i pd uvb lamp, 1 mw/cm2 - 6 9 - na 1 uvi - 1. 4 - na temperature coefficient i tc uvb lamp - 0.1 - % / c responsivi ty r = 300 nm, v r = 0 v - 0.14 - a/w spectral detection range 10% of r 2 3 5 - 320 nm package dimension
29.11.2011 guvb - s11 sd 2 of 2 responsivity curve photocurrent along uv power
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