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| Datasheet File OCR Text: |
| i nchange semiconductor isc product specification isc w ebsite is registered trademark 1 isc silicon pn p power transistor 2 sa10 9 6 a description high collector - emitter breakdown voltage - v ( br ) ceo = - 6 0v ( min ) good linearity of h fe complement to t ype 2 sc2 497 a applications designed for l ow - frequency power amplification a bsolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector - b ase v oltage - 7 0 v v ceo collector - e mitter v oltage - 6 0 v v ebo emitter - b ase v oltage - 5 v i c collector c urrent - continuous - 2 a i c m collector c urrent - peak - 3 a p c collector p ower d issipat i on @ t a =25 1 .2 w total p ower d issipat i on @ t c =25 5 t j junction temperature 150 t stg storage temperature range - 5 5~ 150
i nchange semiconductor isc product specification isc w ebsite is registered trademark 2 isc silicon pnp power transistor 2 sa1 09 6 a electrical characteristics t c =25 v (br) ceo collector - e mitter breakdown v oltage i c = - 2m a; i b = 0 - 6 0 v v (br) cbo collector - b ase breakdown v oltage i c = - 1m a; i e = 0 - 70 v v c e( sat ) collecto r - e mitter s aturation v oltage i c = - 1.5 a; i b = - 0.15 a - 1.0 v v be( sat ) base - e mitter s aturation v oltage i c = - 1.5 a; i b = - 0.15 a - 1.5 v i c bo collector c utoff c urrent v c b = - 20 v ; i e = 0 - 1 a i c eo collector c utoff c urrent v c e = - 10 v ; i b = 0 - 100 a i ebo e mitter c utoff c urrent v eb = - 5 v; i c = 0 - 10 a h fe dc c urrent g ain i c = - 1 a ; v ce = - 5 v 8 0 220 f t current - gain bandwidth product i e = 0.5 a; v c b = - 5 v ; f= 200mhz 15 0 mhz c ob output capacitance i e = 0 ; v c b = - 2 0 v ; f= 1.0mhz 5 5 pf ? h fe classifications q r 80 - 160 120 - 220 |
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