FCA47N60F n-channel frfet ? mosfet absolute maximum ratings thermal characteristics symbol parameter FCA47N60F unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 47 29.7 a a i dm drain current - pulsed (note 1) 141 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1800 mj i ar avalanche current (note 1) 47 a e ar repetitive avalanche energy (note 1) 41.7 mj dv/dt peak diode recovery dv/dt (note 3) 50 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 417 3.33 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 c symbol parameter typ. max. unit r jc thermal resistance, junction-to-case -- 0.3 c/w r cs thermal resistance, case-to-sink 0.24 -- c /w r ja thermal resistance, junction-to-ambient -- 41.7 c/w march 2013 FCA47N60F n-channel superfet ? frfe t ? mosfet 600 v, 47 a, 73 m www.fairchildsemi.com ?2007 fairchild semiconductor corporation FCA47N60F rev. c0 features ? 650 v @ t j = 150c ? typ.r ds(on) = 62 m ? fast recovery type (typ. t rr = 240 ns ) ? ultra low gate charge (typ. q g = 210 nc ) ? low effective output capacitance (typ. c oss .eff = 420 pf ) ? 100% avalanche tested ? rohs compliant applications ? lcd / led / pdp tv ? solar inverter ? ac-dc power supply description superfet ? mosfet is fair child semiconductor ? ?s first gener- ation of high voltage super-juncti on (sj) mosfet family that is utilizing charge balance technology for outstanding low on-resis- tance and lower gate charge performance.this technology is tai- lored to minimize conduction lo ss, provide superior switching performance,dv/dt rate and higher avalanche energy. conse- quently, superfet mosfet is very suitable for the switching power applications such as pfc, server / telecom power, fpd tv power, atx power and industrial power applications. super- fet frfet ? mosfet?s optimized body diode reverse recovery performance can remove additional component and improve system reliability. to-3pn g d s d g s
2 FCA47N60F n-channel frfet? mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. i as = 18a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 47a, di/dt 1,200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity FCA47N60F FCA47N60F to-3pn - - 30 symbol parameter conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 600 -- -- v v gs = 0v, i d = 250 a, t j = 150 c -- 650 -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c- -0 . 6- -v / c bv ds drain-source avalanche breakdown voltage v gs = 0v, i d = 47a -- 700 -- v i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t c = 125 c -- -- -- -- 10 100 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3 . 0 - - 5 . 0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 23.5a -- 0.062 0.073 g fs forward transconductance v ds = 40v, i d = 23.5a (note 4) -- 40 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 5900 8000 pf c oss output capacitance -- 3200 4200 pf c rss reverse transfer capacitance -- 250 -- pf c oss output capacitance v ds = 480v, v gs = 0v, f = 1.0mhz -- 160 -- pf c oss eff. effective output capacitance v ds = 0v to 400v, v gs = 0v -- 420 -- pf switching characteristics t d(on) turn-on delay time v dd = 300v, i d = 47a r g = 25 (note 4, 5) -- 185 430 ns t r turn-on rise time -- 210 450 ns t d(off) turn-off delay time -- 520 1100 ns t f turn-off fall time -- 75 160 ns q g total gate charge v ds = 480v, i d = 47a v gs = 10v (note 4, 5) -- 210 270 nc q gs gate-source charge -- 38 -- nc q gd gate-drain charge -- 110 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 47 a i sm maximum pulsed drain-source diode forward current -- -- 141 a v sd drain-source diode forward voltage v gs = 0v, i s = 47a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 47a di f /dt =100a/ s (note 4) -- 240 -- ns q rr reverse recovery charge -- 2.04 -- c www.fairchildsemi.com ?2007 fairchild semiconductor corporation fca47 n60f rev. c0
3 FCA47N60F n-channel frfet? mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate volt age variation vs. source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 24681 0 10 0 10 1 10 2 - note 1. v ds = 40v 2. 250 s pulse test -55 c 150 c 25 c i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0 20 40 60 80 100 120 140 160 180 200 0.00 0.05 0.10 0.15 0.20 0.25 v gs = 20v v gs = 10v * note : t j = 25 c r ds(on) [ ],drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 0 10 1 10 2 25 c 150 c * notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 5000 10000 15000 20000 25000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 50 100 150 200 250 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 47a v gs , gate-source voltage [v] q g , total gate charge [nc] www.fairchildsemi.com ?2007 fairchild semiconductor corporation fca47 n60f rev. c0
4 FCA47N60F n-channel frfet? mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. safe operating area figure 10. maximum drain current vs. case temperature figure 10. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 23.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 s * notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 i d , drain current [a] t c , case temperature [ c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 * n otes : 1. z jc (t) = 0.3 c/w max. 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fca47 n60f rev. c0
5 FCA47N60F n-channel frfet? mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms www.fairchildsemi.com ?2007 fairchild semiconductor corporation FCA47N60F rev. c0
6 FCA47N60F n-channel frfet? mosfet peak diode recovery dv/dt test circuit & waveforms www.fairchildsemi.com ?2007 fairchild semiconductor corporation FCA47N60F rev. c0
7 FCA47N60F n-channel frfet? mosfet mechanical dimensions to-3pn dimensions in millimeters www.fairchildsemi.com ?2007 fairchild semiconductor corporation FCA47N60F rev. c0
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* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor pr oducts are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 ?
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