EM6M1 transistors 1/6 (1) tr1 (nch) source (2) tr1 (nch) gate (3) tr2 (pch) drain (4) tr2 (pch) source (5) tr2 (pch) gate (6) tr1 (nch) drain ?1 esd protection diode ?2 body diode ?2 ?2 ?1 ?1 (1) (6) (3) (4) (2) (5) 2.5v drive nch+pch mosfet EM6M1 z structure z dimensions (unit : mm) silicon n-channel mosfet / silicon p-channel mosfet z features 1) nch mosfet and pch mosfet are put in emt6 package. 2) high-speed switching. 3) low voltage drive (2.5v drive). 4) built-in g-s pr otection diode. z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) EM6M1 t2r 8000 type z absolute maximum ratings (ta=25 c) ?1 parameter v v dss symbol 30 v v gss 20 a i d 0.1 a i dp 0.4 mw / total p d 150 mw / element 120 c tch 150 c tstg ?55 to +150 tr1 : n-ch ?20 12 0.2 0.4 tr2 : p-ch limits unit drain-source voltage gate-source voltage drain current power dissipation channel temperature range of storage temperature continuous pulsed ?1 pw 10s, duty cycle 1% ?2 mounted on a ceramic board ?2 z notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. emt6 abbreviated symbol : m01 each lead has same dimensions
EM6M1 transistors 2/6 n-ch z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 1 av gs = 20v, v ds =0v v dd 15v, i d =0.1a typ. max. unit conditions gate-source leakage v (br) dss 30 ?? vi d =10a, v gs =0v drain-source breakdown voltage i dss ?? 1 av ds =30v, v gs =0v zero gate voltage drain current v gs (th) 0.8 ? 1.5 v v ds =3v, i d =100a gate threshold voltage ? 58 i d =10ma, v gs =4v static drain-source on-state resistance r ds (on) ? 713 ? ? i d =1ma, v gs =2.5v forward transfer admittance input capacitance 20 ?? ms v ds =3v, i d =10ma output capacitance c iss ? 13 ? pf v ds =5v reverse transfer capacitance c oss ? 9 4 ? pf v gs =0v turn-on delay time c rss ? 15 ? pf f=1mhz rise time t d (on) ? 35 ? ns turn-off delay time t r ? 80 ? ns fall time t d (off) ? 80 ? ns t f ? 0.9 ? ns q g ? 0.2 ? nc q gs ? 0.2 ? nc v gs =4.5v q gd ?? nc r l =150?, r g =10? ?pulsed ? ? ? ? ? ? ? ? ? total gate charge gate-source charge gate-drain charge v dd 5 v i d =10ma v gs =5v r l =500? r g =10? p-ch z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 10 av gs = 12v, v ds =0v v dd ? 15v, i d = ? 0.2a typ. max. unit conditions gate-source leakage v (br) dss ? 20 ?? vi d = ? 1ma, v gs =0v drain-source breakdown voltage i dss ??? 1 av ds = ? 20v, v gs =0v zero gate voltage drain current v gs (th) ? 0.7 ?? 2.0 v v ds = ? 10v, i d = ?1ma gate threshold voltage ? 1.0 1.5 i d = ? 0.2a, v gs = ? 4.5v static drain-source on-state resistance r ds (on) ? 1.1 1.6 ? ? ? i d = ? 0.2a, v gs = ? 4v forward transfer admittance ? 2.0 3.0 i d = ? 0.2a, v gs = ? 2.5v input capacitance 0.2 ?? sv ds = ? 10v, i d = ? 0.15a output capacitance c iss ? 50 ? pf v ds = ? 10v reverse transfer capacitance c oss ? 5 5 ? pf v gs = 0v turn-on delay time c rss ? 9 ? pf f=1mhz rise time t d (on) ? 6 ? ns turn-off delay time t r ? 35 ? ns fall time t d (off) ? 45 ? ns t f ? 1.2 ? ns q g ? 0.2 ? nc q gs ? 0.2 ? nc v gs = ? 4.5v q gd ?? nc r l = 75?, r g = 10? ?pulsed ? ? ? ? ? ? ? ? ? total gate charge gate-source charge gate-drain charge v dd ? 15 v i d = ? 0.15a v gs = ? 4.5v r l = 100? r g = 10?
EM6M1 transistors 3/6 n-ch z electrical characteristic curve 04 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta=125 c 75 c 25 c ?25 c v ds =3v pulsed fig.1 typical transfer characteristics 0.001 1 2 50 static drain-source on-state resistance : r ds (on) (?) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 c 75 c 25 c ?25 c v gs =4v pulsed fig.2 static drain-source on-state resistance vs. drain current ( ) 0.001 1 2 50 static drain-source on-state resistance : r ds (on) (?) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 c 75 c 25 c ?25 c v gs =2.5v pulsed fig.3 static drain-source on-state resistance vs. drain current ( ? ) 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs (v) i d =0.1a static drain-source on-state resistance : r ds (on) (?) fig.4 static drain-source on-state resistance vs. gate-source voltage ta=25 c pulsed i d =0.05a 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta=?25 c 25 c 75 c 125 c fig.5 forward transfer admittance vs. drain current v ds =3v pulsed 200m source current : i s (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125 c 75 c 25 c ?25 c fig.6 reverse drain current vs. source-drain voltage ( ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 50 5 10 20 fig.7 typical capacitance vs. drain-source voltage c iss c oss c rss ta =25 c f=1mh z v gs =0v 0.1 10 20 500 swithing time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 100 ta =25 c v dd =5v v gs =5v r g =10? t d(off) t r t d(on) t f fig.8 switching characteristics
EM6M1 transistors 4/6 p-ch z electrical characteristic curve drain current : ?i d (a) gate-source voltage : ?v gs (v) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 1 0.1 0.01 0.001 fig.1 typical transfer characteristics v ds = ?10v pulsed ta =125 c 75 c 25 c ?25 c static drain-source on-state resistance : r ds(on) (?) drain current : ?i d (a) 0.01 0.1 1 10 1 0.1 fig.2 static drain-source on-state resistance vs. drain current ( ) v gs = ?4.5v pulsed ta =125 c 75 c 25 c ?25 c static drain-source on-state resistance : r ds(on) (?) drain current : ?i d (a) 0.01 0.1 1 10 1 0.1 fig.3 static drain-source on-state resistance vs. drain current ( ? ) v gs = ?4v pulsed ta =125 c 75 c 25 c ?25 c static drain-source on-state resistance : r ds(on) (?) drain current : ?i d (a) 0.01 0.1 1 10 1 0.1 fig.4 static drain-source on-state resistance vs. drain current ( ?? ) v gs = ?2.5v pulsed ta =125 c 75 c 25 c ?25 c static drain-source on-state resistance : r ds(on) (?) drain current : ?i d (a) 0.01 0.1 1 10 1 0.1 fig.5 static drain-source on-state resistance vs. drain current ( ) ta =25 c pulsed v gs = ?2.5v v gs = ?4.5v v gs = ?4v static drain-source on-state resistance : r ds(on) (?) gate-source voltage : ?v gs (v) 012345678910 5 3 4 0 1 2 fig.6 static drain-source on-state resistance vs. gate-source voltage ta =25 c pulsed i d = ?0.1a i d = ?0.2a capacitance : c (pf) drain-source voltage : ?v ds (v) 0.01 0.1 1 10 100 100 10 0 c iss fig.7 typical capacitance vs. drain-source voltage ta =25 c f=1mhz v gs =0v c oss c rss switching time : t (ns) drain current : ?i d (a) 0.01 0.1 1 1000 100 10 1 fig.8 switching characteristics ta =25 c v dd = ?15v v gs = ?4.5v r g =10? pulsed t f t d(off) t d(on) t r gate-source voltage : ?v gs (v) total gate charge : q g (nc) 0 0.2 0.4 0.6 0.8 1 1.2 4.5 4 3 2.5 3.5 0 1 0.5 2 1.5 fig.9 dynamic input characteristics ta =25 c v dd = ?15v i d = ?0.2a r g = 10? pulsed
EM6M1 transistors 5/6 source current : ?i s (a) source-drain voltage : ?v sd (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 0.1 0.01 fig.10 source current vs. source-drain voltage v gs =0v pulsed ta =125 c 75 c 25 c ?25 c n-ch z measurement circuit fig.9 switching time test circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.10 switching time waveforms fig.11 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.12 gate charge waveform v g v gs charge q g q gs q gd
EM6M1 transistors 6/6 p-ch z measurement circuit fig.11 switching time test circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds t f t off t on t d (off) fig.12 switching time waveforms t r t d (on) 90% fig.13 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.14 gate charge waveform v g v gs charge q g q gs q gd
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