1999. 6. 24 1/2 semiconductor technical data KTB1469 epitaxial planar pnp transistor revision no : 1 high voltage application tv, monitor vertical output application driver stage application coror tv class b sound output application features high breakdown voltage : v ceo =-180v(min.) high transition frequency : f t =50mhz(typ.) high current : i c(max) =-2a complementary to ktd2161 maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -200 v collector-emitter voltage v ceo -180 v emitter-base voltage v ebo -5 v collector current i c -2 a base current i b -0.2 a collector power dissipation (tc=25 1 ) p c 25 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-200v, i e =0 - - -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 a collector-emitter breakdown voltage v ceo i c =-10ma, i b =0 -180 - - v dc current gain h fe v ce =-10v, i c =-400ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -1.0 v base-emitter voltage v be v ce =-5v, i c =-500ma - - -1.0 v transition frequency f t v ce =-10v, i c =-400ma - 100 - mhz note: h fe classification o:70 140, y:120 240
1999. 6. 24 2/2 KTB1469 revision no : 1 collecotr current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v collector power dissipation p (w) 0 c 0 case temperature ta ( c) pc - ta 10 dc current gain h fe -0.3 -0.1 -0.03 -0.01 collector current i (a) c h - i v ,v - i c collector current i (a) -0.01 -0.03 -0.1 -0.3 -0.01 be(sat) saturation voltage v ,v (v) collector current i (a) -5 collector-emitter voltage v (v) -10 -30 -100 ce c -0.1 safe operating area -10 -20 -30 -40 -50 -0.2 -0.4 -0.6 -0.8 -1.0 i =-8ma b i =-7ma b i =-6ma b i =-5ma b i =-4ma b i =-3ma b i =-2ma b i =-1ma b fe c -1 -3 -10 30 50 100 300 500 1k v =-10v ce ce(sat) be(sat) c ce(sat) -1 -3 -10 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 v be(sat) ce(sat) v i =10i c b -50 -300 -0.3 -0.5 -1 -3 -5 -10 nonrepetitive pulse tc=25 c curves must be derated unearly with increase in temperature single * t herm al limit ation s/b limita tion dc 1ms * 50 100 150 10 20 30 40
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