npn silicon planar high speed switching transistors issue 3 ? april 94 features * 15 volt v ceo *f t =600 mhz applications * vhf/uhf operation absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 3v base current i b 100 ma continuous collector current i c 500 ma power dissipation at t amb =25c p tot 300 mw operating and storage temperature range t j :t stg -55 to +175 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 30 v i c =10 m a, i e =0 collector-emitter sustaining voltage v ceo(sus) 15 v i c =10ma, i b =0 emitter-base breakdown voltage v (br)ebo 3v i e =10 m a, i c =0 collector cut-off current i cbo 0.01 m a v cb =15v, i e =0 emitter cut-off current i ebo 0.2 m a v eb =2v, i c =0 collector-emitter saturation voltage ztx320, ztx322 ztx323 ZTX321 v ce(sat) 0.4 0.4 0.4 v v v i c =10ma, i b =1ma i c =10ma, i b =1ma i c =3ma, i b =0.3ma base-emitter saturation voltage ztx320, ztx322 ztx323 ZTX321 v be(sat) 1.0 1.0 1.0 v v v i c =10ma, i b =1ma i c =10ma, i b =1ma i c =3ma, i b =0.3ma static forward current transfer ratio ztx320, ZTX321 ztx322 ztx323 h fe 20 20 100 300 150 300 i c =3ma, v ce =1v i c =3ma, v ce =1v i c =3ma, v ce =1v output capacitance c obo 1.7 pf v cb =10v, f=1mhz input capacitance c ibo 1.6 pf v eb =0.5v, f=1mhz transition frequency at f=100mhz f t 600 400 mhz mhz i c =4ma, v ce =10v i c =30ma, v ce =10v noise figure n 6 db i e =1ma, v ce =6v r s =400 w, f=60mhz power gain g pe typical 15 db i c =6ma, v cb =12v f=200mhz e-line to92 compatible ztx320 ZTX321 ztx322 ztx323 3-159 c b e typical characteristics f t v i c i c (ma) f t - m hz 0 5 10 15 20 25 800 600 400 0 200 1000 v ce =10v f=100mhz p d - power dissipation (watts) 0.1 0.2 0.3 0.4 t - temperature (c) 0 -60 -20 20 60 100 140 180 0 derating curve ztx320 ZTX321 ztx322 ztx323 3-160
npn silicon planar high speed switching transistors issue 3 ? april 94 features * 15 volt v ceo *f t =600 mhz applications * vhf/uhf operation absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 3v base current i b 100 ma continuous collector current i c 500 ma power dissipation at t amb =25c p tot 300 mw operating and storage temperature range t j :t stg -55 to +175 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo 30 v i c =10 m a, i e =0 collector-emitter sustaining voltage v ceo(sus) 15 v i c =10ma, i b =0 emitter-base breakdown voltage v (br)ebo 3v i e =10 m a, i c =0 collector cut-off current i cbo 0.01 m a v cb =15v, i e =0 emitter cut-off current i ebo 0.2 m a v eb =2v, i c =0 collector-emitter saturation voltage ztx320, ztx322 ztx323 ZTX321 v ce(sat) 0.4 0.4 0.4 v v v i c =10ma, i b =1ma i c =10ma, i b =1ma i c =3ma, i b =0.3ma base-emitter saturation voltage ztx320, ztx322 ztx323 ZTX321 v be(sat) 1.0 1.0 1.0 v v v i c =10ma, i b =1ma i c =10ma, i b =1ma i c =3ma, i b =0.3ma static forward current transfer ratio ztx320, ZTX321 ztx322 ztx323 h fe 20 20 100 300 150 300 i c =3ma, v ce =1v i c =3ma, v ce =1v i c =3ma, v ce =1v output capacitance c obo 1.7 pf v cb =10v, f=1mhz input capacitance c ibo 1.6 pf v eb =0.5v, f=1mhz transition frequency at f=100mhz f t 600 400 mhz mhz i c =4ma, v ce =10v i c =30ma, v ce =10v noise figure n 6 db i e =1ma, v ce =6v r s =400 w, f=60mhz power gain g pe typical 15 db i c =6ma, v cb =12v f=200mhz e-line to92 compatible ztx320 ZTX321 ztx322 ztx323 3-159 c b e typical characteristics f t v i c i c (ma) f t - m hz 0 5 10 15 20 25 800 600 400 0 200 1000 v ce =10v f=100mhz p d - power dissipation (watts) 0.1 0.2 0.3 0.4 t - temperature (c) 0 -60 -20 20 60 100 140 180 0 derating curve ztx320 ZTX321 ztx322 ztx323 3-160
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