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  number: db - 057 jan.2011 / f page 1 s em ic ond uc tor tak cheong ? 500 mw ll - 34 hermetically sealed glass zener voltage regulators absolute maximum ratings t a = 25c unless otherwise noted parameter value units power dissipation 500 mw storage temperature r ange - 65 to + 175 c operating junction temperature + 175 c these ratings are limiting values above which the serviceability of the diode may be impaired. specification features: ? zener voltage range 2.0 to 75 volts ? ll - 34 (mini - melf) package ? surf ace device type mounting ? hermetically sealed glass ? compression bonded construction ? all e xternal s urfaces a re c orrosion r esistant a nd t erminals a re r eadily s olderable ? rohs compliant ? matte tin (sn) terminal finish ? color band i ndicates n egative p olarity electrical characteristics t a = 25c unless otherwise noted v z @ i zt (volts) device type v z min v z max i zt (ma) z zt @ i zt ( ? ) max i zk (ma) z zk @ i zk ( ? ) max i r @ v r ( ? a) max v r (volts) tcbzv79c 2v0 1.88 2.12 5 100 1 600 150 1 tcbzv79c 2 v 2 2.08 2.33 5 100 1 600 150 1 tcbzv79c 2 v 4 2.28 2.56 5 100 1 600 100 1 tcbzv79c 2 v 7 2.51 2.89 5 100 1 600 75 1 tcbzv79c 3 v 0 2.8 3.2 5 95 1 600 50 1 tcbzv79c 3v3 3.1 3.5 5 95 1 600 25 1 tcbzv79c 3v6 3.4 3.8 5 90 1 600 15 1 tcbzv79c 3v9 3.7 4.1 5 90 1 600 10 1 tcbzv79c 4v3 4 4.6 5 90 1 600 5 1 tcbzv79c 4v7 4.4 5 5 80 1 500 3 2 tcbzv79c 5v1 4.8 5.4 5 60 1 480 2 2 tcbzv79c 5v6 5.2 6 5 40 1 400 1 2 tcbzv79c 6v2 5.8 6.6 5 10 1 150 3 4 tcbzv79c 6v8 6.4 7.2 5 15 1 80 2 4 tcbzv79c 7v5 7 7.9 5 15 1 80 1 5 tcbzv79c 8v2 7.7 8.7 5 15 1 80 0.7 5 tcbzv79c 9v1 8.5 9.6 5 15 1 100 0.5 6 tcbzv79c 10 9.4 10.6 5 20 1 150 0.2 7 tcbzv79c 11 10.4 11.6 5 20 1 150 0.1 8 tcbzv79c 12 11.4 12.7 5 25 1 150 0.1 8 cathode anode electrical symbol device marking diagram cathode band color : blue surface mount ll34 tcbzv79c 2 v 0 through tcb z v79c 75 tcbzv79b2v0 through tcbzv79b75
number: db - 057 jan.2011 / f page 2 s em ic ond uc tor tak cheong ? electrical characteristics t a = 25c unless otherwise no ted v z @ i zt (volts) device type v z min v z max i zt (ma) z zt @ i zt ( ? ) max i zk (ma) z zk @ i zk ( ? ) max i r @ v r ( ? a) max v r (volts) tcbzv79c 13 12.4 14.1 5 30 1 170 0.1 8 tcbzv79c 15 13.8 15.6 5 30 1 200 0.05 10.5 tcbzv79c 16 15.3 17.1 5 40 1 200 0 .05 11.2 tcbzv79c 18 16.8 19.1 5 45 1 225 0.05 12.6 tcbzv79c 20 18.8 21.2 5 55 1 225 0.05 14 tcbzv79c 22 20.8 23.3 5 55 1 250 0.05 15.4 tcbzv79c 24 22.8 25.6 5 70 1 250 0.05 16.8 tcbzv79c 27 25.1 28.9 2 80 0.5 300 0.05 18.9 tcbzv79c 30 28 32 2 80 0.5 300 0.05 21 tcbzv79c 33 31 35 2 80 0.5 325 0.05 23.1 tcbzv79c 36 34 38 2 90 0.5 350 0.05 25.2 tcbzv79c 39 37 41 2 130 0.5 350 0.05 27.3 tcbzv79c 43 40 46 2 150 0.5 375 0.05 30.1 tcbzv79c 47 44 50 2 170 0.5 375 0.05 32.9 tcbzv79c 51 48 54 2 180 0.5 4 00 0.05 35.7 tcbzv79c 56 52 60 2 200 0.5 425 0.05 39.2 tcbz v 79c 62 58 66 2.5 215 0.5 1000 0.05 43.4 tcbz v 79c 68 64 72 2.5 240 0.5 1000 0.05 47.6 tcbz v 79c 75 70 80 2.5 255 0.5 1000 0.05 52.5 v f forward voltage = 1.5 v maximum @ i f = 100 ma for all type s v z @ i zt (volts) device type min max i zt (ma) z zt @ i zt ( ? ) max i zk (ma) z zk @ i zk ( ? ) max i r @ v r ( ? a) max v r (volts) tcbzv79b 2 v 4 2.35 2.45 5 100 1 600 100 1 tcbzv79b 2 v 7 2.65 2.75 5 100 1 600 75 1 tcbzv79b 3v 0 2.94 3.06 5 95 1 600 50 1 tcbzv79b 3v3 3.23 3.37 5 95 1 600 25 1 tcbzv79b 3v6 3.53 3.67 5 90 1 600 15 1 tcbzv79b 3v9 3.82 3.98 5 90 1 600 10 1 tcbzv79b 4v3 4.21 4.39 5 90 1 600 5 1 tcbzv79b 4v7 4.61 4.79 5 80 1 500 3 2 tcbzv79b 5v1 5.00 5.20 5 60 1 480 2 2 tcbzv79b 5v6 5.49 5 .71 5 40 1 400 1 2 tcbzv79b 6v2 6.08 6.32 5 10 1 150 3 4 tcbzv79b 6v8 6.66 6.94 5 15 1 80 2 4 tcbzv79b 7v5 7.33 7.63 5 15 1 80 1 5 tcbzv79b 8v2 8.04 8.36 5 15 1 80 0.7 5 tcbzv79b 9v1 8.92 9.28 5 15 1 100 0.5 6 tcbzv79b 10 9.80 10.20 5 20 1 150 0.2 7 tcbzv79b 11 10.78 11.22 5 20 1 150 0.1 8 tcbzv79b 12 11.76 12.24 5 25 1 150 0.1 8 tcbzv79b 13 12.74 13.26 5 30 1 170 0.1 8 tcbzv79b 15 14.70 15.30 5 30 1 200 0.05 10.5 tcbzv79b 16 15.68 16.32 5 40 1 200 0.05 11.2 tcbzv79b 18 17.64 18.36 5 45 1 225 0. 05 12.6 tcbzv79b 20 19.60 20.40 5 55 1 225 0.05 14 tcbzv79b 22 21.56 22.44 5 55 1 250 0.05 15.4 tcbzv79b 24 23.52 24.48 5 70 1 250 0.05 16.8 tcbzv79b 27 26.46 27.54 2 80 0.5 300 0.05 18.9 tcbzv79b 30 29.40 30.60 2 80 0.5 300 0.05 21 tcbzv79b 33 32.34 33.66 2 80 0.5 325 0.05 23.1 tcbzv79b 36 35.28 36.72 2 90 0.5 350 0.05 25.2
number: db - 057 jan.2011 / f page 3 s em ic ond uc tor tak cheong ? electrical characteristics t a = 25c unless otherwise noted v z @ i zt (volts) device type min max i zt (ma) z zt @ i zt ( ? ) max i zk (ma) z zk @ i zk ( ? ) max i r @ v r ( ? a) max v r (volts) tcbzv79b 39 38.22 39.78 2 130 0.5 350 0.05 27.3 tcbzv79b 43 42.14 43.86 2 150 0.5 375 0.05 30.1 tcbzv79b 47 46.06 47.94 2 170 0.5 375 0.05 32.9 tcbzv79b 51 49.98 52.02 2 180 0.5 400 0.05 35.7 tcbzx79b 56 54.88 57.12 2 200 0.5 425 0.05 39.2 tcbzx79b 62 60.76 63.24 2.5 215 0.5 430 0.05 43.4 tcbzx79b 68 66.64 69.36 2.5 240 0.5 447 0.05 47.6 tcbzx79b 75 73.50 76.50 2.5 255 0.5 470 0.05 52.5 v f forward voltage = 1. 5 v maximum @ i f = 100 ma for all types notes: 1. the type numbers listed have z ener voltage min/max limits as shown. 2. for detailed information on price, availability and delivery of nominal zener voltages between the v oltages shown and tighter voltage tolerances, contact your nearest tak cheong electronics representative. 3. the zener im pedance is derived from the 60 - cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current ( i zt or i zk ) is superimposed to i zt or i zk.
number: db - 057 jan.2011 / f page 4 s em ic ond uc tor tak cheong ? typical characteristics 0 100 200 300 400 500 600 0 40 80 120 160 200 temperature [ ] pd-power passipation [mw] ta = 25 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 vf - forw ard voltage [mv] forward current [ma] pd = 500mw ta = 25 0 50 100 150 200 250 300 0 2 4 6 8 10 vz - reverse voltage [v] reverse current [ma] pd = 500mw ta = 25 0.01 0.1 1 10 100 15 25 35 45 55 65 75 vz - reverse voltage [v] reverse current [ma] f = 1mhz ta = 25 1 10 100 1000 0 20 40 60 80 vz - reverse voltage [v] total capacitance [pf] vr = 0v vr = 2v vr = 5v vr = 20v vr = 30v ta = 25 0.1 1 10 100 1000 1 10 100 vz - reverse voltage [v] differential zener impedance [] iz=10ma iz=5ma iz=2ma iz=1ma figure 1. power dissipation vs ambient temperature valid provided leads at a distance of 0.8mm from case are kept at ambient temperature figure 2. total capacitance figure 5. reverse current vs. reverse voltage figure 6. reve rse current vs. reverse voltage figure 3. differential impedance vs. zener voltage figure 4. forward current vs. forward voltage
number: db - 057 jan.2011 / f page 5 s em ic ond uc tor tak cheong ? package outline package case outline ll34 ll - 34 millimeters inc hes dim min max min max a 3.30 3. 6 0 0.130 0.1 4 2 b 1. 40 1. 50 0.055 0.059 c 0.35 0.50 0.014 0.020 notes: 1. all dimensions are within do213ac jedec standard. 2. ll - 34 polarity denoted by cathode band. b c a
number: db-100 april 14, 2008 / a disclaimer notice tak cheong ? notice the information presented in this document is for reference only. tak cheong reserves the right to make changes without notice for the specification of the products displayed herein. the product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controlle rs and other safety devices), tak cheong semiconductor co., ltd., or anyone on its behalf, assumes no responsi bility or liability for any damagers resulting from such improper use of sale. this publication supersedes & replaces all information reviously supplied. for additional information, please visit our website http://www.takcheong.com , or consult your nearest tak cheong?s sales office for further assistance.


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