2005. 7. 18 1/2 semiconductor technical data ktc3202 epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features excellent h fe linearity : h fe (2)=25(min.) at v ce =6v, i c =400ma. complementary to kta1270. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n m 1.00 n 1. emitter 2. collector 3. base + _ 0.30 +0.10 - 0.05 electrical characteristics (ta=25 ) note : h fe (1) classification 0:70 140, y:120 240, gr:200~400 h fe (2) classification 0:25min., y:40min. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (1) (note) v ce =1v, i c =100ma 70 - 400 h fe (2) (note) v ce =6v, i c =400ma 25 - - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v base-emitter voltage v be v ce =1v, i c =100ma - 0.8 1.0 v transition frequency f t v ce =6v, i c =20ma - 300 - mhz collector output capacitance c ob v cb =6v, i e =0, f=1mhz - 7.0 - pf characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 500 ma base current i e -500 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150
2005. 7. 18 2/2 ktc3202 revision no : 0
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