200908192-3 adva nced power electronics corp. 1/6 ap9987gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data g d s bv 80v lower gate charge r 90mw simple drive requirement fast switching characteristic rohs-compliant , halogen-free i 1 5 a o rdering information ap99 8 7gh-3 tr : in rohs-compliant halogen-free to-252 shipped on tape and reel ( 3000 pcs/reel) ap99 8 7gj-3 t b : in rohs-compliant halogen-free to-251 shipped in tubes (80 pcs/tube, 12 tubes/carton) symbol units v ds v v gs i d at t c =2 5 c i d at t c =10 0 c i dm p d at t c =2 5 c t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 c /w rthj-a 62.5 c /w rthj-a maixmum thermal resistance, junction-ambient 110 c /w parameter operating junction temperature range -55 to 150 c continuous drain current 9 a pulsed drain curren t 1 50 a storage temperature range total power dissipation 34.7 w -55 to 150 c gate-source voltage 2 5 v continuous drain current 1 5 a linear derating factor 0.28 w/c parameter rating drain-source voltage 8 0 maximum thermal resistance, junction-ambient (pcb mount) 3 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the ap99 8 7gh-hf-3 is in the to-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power dc/dc converters. the through-hole to-251 version , ap99 8 7gj-hf-3, is available where a small pcb footprint is required. g d s to-252 (h) d (tab) g d s to-25 1 ( j ) d (tab)
adva nced power electronics corp. 2/6 ap9987gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: 1.pulse width limited by maximum junction temperature. 2.pulse test - pulse width < 300s , duty cycle < 2% this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface-mounted on 1 in 2 copper pad of fr4 board, symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 80 - - v r ds(on) static drain-source on-resistance 2 v gs = 10v, i d = 10a - - 90 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =10a - 15 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 10 ua i gss gate-source leakage v gs =25v, v ds =0v - - 100 na q g total gate charge 2 i d =10a - 11 18 nc q gs gate-source charge v ds =64v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =40v - 8 - ns t r rise time i d =10a - 12 - ns t d(off) turn-off delay time r g =3.3w, v gs = 10v - 19 - ns t f fall time r d =4w - 3 - ns c iss input capacitance v gs =0v - 980 1570 pf c oss output capacitance v ds =25v - 75 - pf c rss reverse transfer capacitance f=1.0mhz - 50 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =10a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =10a, v gs =0 v - 33 - ns q rr reverse recovery charge di/dt=100a/s - 44 - nc v gs = 4.5v, i d = 7a - - 105 mw r g gate resistance f=1.0mhz - 1.1 1.7 w d bv dss /d t j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.09 - v/c v ds = 64 v, v gs =0v, t j =125c - - 250 ua
adva nced power electronics corp. 3/6 ap9987gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 10 20 30 03691 2 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7. 0v 5 0v 4.5v v g =3.0v 0 10 20 30 03 691 2 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.0v 10v 7. 0v 5. 0v 4. 5v 60 100 140 180 24681 0 v gs , gate-to-source voltage (v) r ds(on) (mw ) i d =7a t c =25 o c 0 4 0 7 1 0 1 3 1 6 1 9 50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =10a v g =10v 0 4 0 8 1 2 1 6 50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 10 0 0 2 0 4 0 6 0 8 1 1 2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
adva nced power electronics corp. 4/6 ap9987gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform q v g 4.5v q gs q gd q g charge typical electrical characteristics (cont.) 0 4 8 12 16 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =40v v ds =50v v ds =64v 10 100 1000 10000 1 5 9 1 31 72 12 52 9 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 01 0 1 1 0 00001 0 0001 0 001 0 01 0 1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor t/t peak t j p dm x r thjc t c t t 0.02 0.01 0.05 0 1 0.2 duty factor=0 5 single pulse 0 1 1 0 10 0 100 0 0 1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse operation in this area limited by r ds(on) 0 10 20 30 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
adva nced power electronics corp. 5/6 ap9987gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: to-252 laser marking symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm product: ap9987 gh = rohs-compliant halogen-free to-252 9987gh ywwsss date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence e3 package code
adva nced power electronics corp. 6/6 ap9987gh/j-hf-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: to-251 symbols millimeters 9987gj ywwsss product: ap9987 package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gj = rohs-compliant halogen-free to-251
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