so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 features absolute maximum ratings ta = 25 parameter symbol 5 secs steady state unit drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j = 150 )* t a =25 -- t a =85 i d 1.7 1.2 1.6 1.0 a pulsed drain current i dm a continuous source current (diode conduction) * i s 0.8 o.8 a power dissipation * t a =25 -- t a =85 p d 0.625 0.400 0.568 0.295 w operating junction and storage temperature range t j ,t stg * surface mounted on 1" x 1" fr4 board. 20 12 5 -55 to +150 thermal resistance ratings ta = 25 parameter symbol typical maximum unit t 5sec 165 200 steady state 180 220 maximum junction-to-foot (drain) steady state r thjf 105 130 * surface mounted on 1" x 1" fr4 board. maximum junction-to-ambient* r thja /w 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors KI1400DL smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type mosfet smd type smd type smd type ic smd type smd type smd type smd type ic smd type product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a 0.6 v gate-body leakage i gss v ds =0v,v gs = 12 v 100 na v ds =16v,v gs =0v 1 v ds =16 v, v gs =0v,t j =85 5 on-state drain current i d(on) v ds = 5v,v gs =4.5v 2a v gs =4.5v,i d = 1.7 a 0.123 0.150 v gs =2.5v,i d =1.3a 0.195 0.235 forward transconductance g fs v ds =10v,i d =1.7a 5 s diode forward voltage v sd i s =0.8a,v gs = 0 v 0.78 1.1 v total gate charge * q g 2.1 4.0 gate-source charge * q gs 0.3 gate-drain charge * q gd 0.4 t d(on) 10 17 t r 30 50 t d(off) 14 25 t f 815 source-drain reverse recovery time trr i f =0.8a,d i /d t =100a/ s 30 50 * pulse test: pw 300 s duty cycle 2%. turn-off time turn-on time ns v ds =10v ,v gs =4.5v,i d =1.7a v dd =10v,r l =20 , i d =1a , v gen =4.5v , r g =6 nc zero gate voltage drain current i dss a drain-source on-state resistance r ds(on) KI1400DL marking marking nd 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type mosfet smd type smd type smd type ic smd type smd type smd type smd type ic smd type product specification
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