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| absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 4.4 i d @ v gs = 12v, t c = 100c continuous drain current 2.8 i dm pulsed drain current 17.6 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 150 mj i ar avalanche current 4.4 a e ar repetitive avalanche energy 7.5 mj dv/dt peak d iode recovery dv/dt 2.5 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (typical) g pre-irradiation c a radiation hardened power mosfet surface mount (smd-0.5) www.irf.com 1 smd-0.5 product summary part number radiation level r ds(on) i d qpl part number irhnj7430se 100k rads (si) 1.77 ? 4.4a jansr2n7466u3 features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight irhnj7430se jansr2n7466u3 international rectifier?s radhard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. rad hard ? hexfet ? technology 500v, n-channel ref: mil-prf-19500/676 irhnj7430se, jansr2n7466u3 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 500 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.61 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 1.77 ? v gs = 12v, i d = 2.8a resistance v gs(th) gate threshold voltage 2.5 ? 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 0.4 ? ? s v ds >= 15v, i ds = 2.8a i dss zero gate voltage drain current ? ? 50 v ds = 400v ,v gs = 0v ? ? 250 v ds = 400v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 30 v gs =12v, i d = 4.4a q gs gate-to-source charge ? ? 8.0 nc v ds = 250v q gd gate-to-drain (?miller?) charge ? ? 18 t d (on) turn-on delay time ? ? 25 v dd = 250v, i d = 4.4a, t r rise time ? ? 65 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 60 t f fall time ? ? 63 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 570 ? v gs = 0v, v ds = 25v c oss output capacitance ? 150 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 50 ? na nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 r thj-pcb junction-to-pc board ? 6.9 ? c/w measured from the center of drain pad to center of source pad source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 4.4 i sm pulse source current (body diode) ? ? 17.6 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 4.4a, v gs = 0v t rr reverse recovery time ? ? 400 ns t j = 25c, i f = 4.4a, di/dt 100a/ s q rr reverse recovery charge ? ? 3.8 cv dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier website. www.irf.com 3 irhnj7430se, jansr2n7466u3 table 1. electrical characteristics @ tj = 25c, post total dose irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. typical single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. typical single event effect safe operating area parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 500 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 50 a v ds = 400v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-3) ? 1.77 ? v gs = 12v, i d = 2.8a r ds(on) static drain-to-source v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 4.4a on-state resistance (smd-0.5) ? 1.77 ? v gs = 12v, i d = 2.8a 0 100 200 300 400 0 -5 -10 -15 -20 vgs vds cu br ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28 285 43 375 375 375 375 375 br 36.8 305 39 350 350 350 325 300 irhnj7430se, jansr2n7466u3 pre-irradiation 4 www.irf.com 15 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 100 5 7 9 11 13 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 4.5a 4.4a www.irf.com 5 irhnj7430se, jansr2n7466u3 ! ! " " " #$ pre-irradiation 1 10 100 0 300 600 900 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0.1 1 10 100 0.4 0.8 1.2 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 8 16 24 32 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 4.5a v = 100v ds v = 250v ds v = 400v ds 4.4a 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc irhnj7430se, jansr2n7466u3 pre-irradiation 6 www.irf.com $ v ds 90% 10% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % ! + - ' & ( )* " 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d www.irf.com 7 irhnj7430se, jansr2n7466u3 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& & ' " . ( & %& . ( & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v pre-irradiation v gs 25 50 75 100 125 150 0 50 100 150 200 250 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.0a 2.8a 4.4a irhnj7430se, jansr2n7466u3 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 400 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l=15.5 mh peak i l = 4.4a, v gs = 12v i sd 4.4a, di/dt 260a/ s, v dd 500v, t j 150c footnotes: case outline and dimensions ? smd-0.5 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/2012 1 = drain 2 = gate 3 = source pad assignments |
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