2007. 9. 3 1/4 semiconductor technical data kmb8d2n60qa n-ch trench mosfet revision no : 1 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainly suitable for back-light inverter. features h v dss =60v, i d =8.2a. h drain-source on resistance. r ds(on) =22m ? (max.) @ v gs =10v r ds(on) =27m ? (max.) @ v gs =4.5v h super high dense cell design mosfet maximum ratings (ta=25 ? unless otherwise noted) flp-8 0.20+0.1/-0.05 p t 1.27 u 0.1 max millimeters 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 b2 g h l d a b1 dim 6.02 0.3 1.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ g h b1 b2 1 4 5 8 a p d l t u note : *surface mounted on 1 ? 1 fr4 board 1 2 3 4 8 7 6 5 s s s g d d d d 1 2 3 4 8 7 6 5 kmb8d2n 60qa pin connection (top view) characteristic symbol pating unit drain source voltage v dss 60 v gate source voltage v gss ? 20 v drain current dc@t a =25 ? i d * 8.2 a dc@t a =70 ? 6.6 a pulsed i dp 40 a drain source diode forward current i s 3.0 a drain power dissipation t a =25 ? p d * 3.0 w t a =70 ? 2.0 w maximum junction temperature t j 150 ? storage temperature range t stg -55~150 ? thermal resistance, junction to ambient r thja * 41 ? /w
2007. 9. 3 2/4 kmb8d2n60qa revision no : 1 electrical characteristics (ta=25 ? ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss v gs =0v, i ds =250 a 60 - - v drain cut-off current i dss v ds =48v, v gs =0v - - 1 a v ds =48v, v gs =0v, t j =70 ? - - 5 gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain-source on resistance r ds(on)* v gs =10v, i d =8.2a - 16 22 m ? v gs =4.5v, i d =7.6a - 20 27 forward transconductance g fs* v ds =5v, i d =8.2a - 2.4 - s dynamic input capaclitance c iss v ds =30v, v gs =0v, f=1mhz - 1920 2300 pf ouput capacitance c oss - 155 - reverse transfer capacitance c rss - 116 - total gate charge (v gs =10v) q g* v ds =30v, v gs =10v, i d =8.2a - 47.6 58 nc total gate charge (v gs =4.5v) - 24.2 30 gate-source charge q gs* - 6.0 - gate-drain charge q gd* - 14.4 - turn-on delay time t d(on)* v dd =30v, v gs =10v r l =3.6 ? , r g =3 ? - 8.2 - ns turn-on rise time t r* - 5.5 - turn-off delay time t d(off)* - 29.7 - turn-off fall time t f* - 5.2 - source-drain diode ratings source-drain forward voltage v sdf* v gs =0v, i dr =1.7a, - 0.74 1.0 v note 1. pulse test : pulse width ? 10 k , duty cycle ? 1%
2007. 9. 3 3/4 kmb8d2n60qa revision no : 1
2007. 9. 3 4/4 kmb8d2n60qa revision no : 1
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