excelics eia/EIB1415-4P preliminary data sheet 14.40-15.35ghz, 4w internally matched power fet 14.40-15.35ghz b andwidth and input/output impedance matched to 50 ohm eia features high pae( 27% typical) eib features high ip3(49dbm typical) +36.0/+35.5dbm typical p 1db output power for eia/eib 8/7db typical g 1db power gain for eia/eib non-hermetic metal flange package electrical characteristics (t a = 25 o c) eia1415-4p EIB1415-4P symbols parameters/test conditions min typ max min typ max unit p 1db output power at 1db compression f=14.40-15.35ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 35.5 36.0 35 35.5 dbm g 1db gain at 1db compression f=14.40-15.35ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 7 8 6 7 db pae power added efficiency at 1db compression f=14.40-15.35ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 27 22 % id 1db drain current at 1db compression 1760 1700 ma ip 3 output 3 rd order intercept point f=14.40-15.35ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 43 49* dbm i dss saturated drain current vds=3v, vgs=0v 2200 2880 3400 2200 2720 3400 ma g m transconductance vds=3v, vgs=0v 3000 1400 ms v p pinch-off voltage vds=3v, ids=24ma -1.0 -2.5 -2.0 -3.5 v bv gd drain breakdown voltage igd=9.6ma -13 -15 -15 v r th thermal resistance (au-sn eutectic attach) 4.5 4.5 o c/w *typical C45dbc im3 at pout=26dbm/tone maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-source voltage -8v -3v ids drain current idss 3120ma igsf forward gate current 360ma 60ma pin input power 35dbm @ 3db compression tch channel temperature 175 o c 150 o c tstg storage temperature -65/175 o c -65/150 o c pt total power dissipation 30w 25w note: 1. exceeding any of the above r atings may result in permanent damage. 2. exceeding any of the above r atings may reduce mttf below design goals. excelics semiconductor, inc., 2908 scott blvd., santa clara, ca 95054 phone: (408) 970-8664 fax: (408) 970-8998 web site: www.excelics.com
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