march 2009 rev 1 1/10 10 STS05DTP03 dual npn-pnp complementary bipolar transistor features high gain low v ce(sat) simplified circuit design reduced component count applications push-pull or totem-pole configuration mosfet and igbt gate driving motor, relay and solenoid driving description the STS05DTP03 is a hybrid dual npn-pnp complementary power bipolar transistor manufactured by using the latest low voltage planar technology. the STS05DTP03 is housed in dual island so-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in push-pull or totem pole configuration as post igbts and mosfets driver. figure 1. internal schematic diagram 5 8 4 1 so-8 table 1. device summary order code marking package packaging STS05DTP03 s05dtp03 so-8 tape and reel www.st.com obsolete product(s) - obsolete product(s)
electrical ratings STS05DTP03 2/10 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit npn pnp v cbo collector-base voltage (i e = 0) 45 -45 v v ceo collector-emitter voltage (i b = 0) 30 -30 v v ebo emitter-base voltage (i c = 0) 6 -6 v i c collector current 5 -5 a i cm collector peak current (t p < 5 ms) 10 -10 a i b base current 1 -1 a i bm base peak current (t p < 1 ms) 2 -2 a p tot total dissipation at t amb = 25 c single operation 2 w p tot total dissipation at t amb = 25 c couple operation 1.6 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 table 3. thermal data symbol parameter value unit r thj-amb (1) thermal resistance junction-ambi ent (single operation) 62.5 c/w r thj-amb (1) thermal resistance junction-am bient (dual operation) 78 c/w 1. when mounted on 1inch 2 pad 2oz. copper, t < 10 sec obsolete product(s) - obsolete product(s)
STS05DTP03 electrical characteristics 3/10 2 electrical characteristics (t case = 25 c ; unless otherwise specified) table 4. q1-npn electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 30 v 10 a i ceo collector cut-off current (i b = 0) v ce = 30 v 1 a i ebo emitter cut-off current (i b = 0) v eb = 6 v 10 a v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 10 ma 30 v v ce(sat) (1) collector-emitter saturation voltage i c = 1 a i b = 10 ma i c = 3 a i b = 100 ma i c = 5 a i b = 250 ma 0.25 0.7 0.7 v v v v be(sat) (1) base-emitter saturation voltage i c = 1 a i b = 10 ma 1.0 v h fe (1) dc current gain i c = 1 a v ce = 2 v i c = 3 a v ce = 2 v i c = 5 a v ce = 2 v i c = 10 a v ce = 2 v 100 100 80 140 100 40 300 1. pulsed duration = 300 s, duty cycle 1.5 % obsolete product(s) - obsolete product(s)
electrical characteristics STS05DTP03 4/10 table 5. q2-pnp electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = -30 v -10 a i ceo collector cut-off current (i b = 0) v ce = -30 v -1 a i ebo emitter cut-off current (i b = 0) v eb = -6 v -10 a v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = -10 ma -30 v v ce(sat) (1) collector-emitter saturation voltage i c = -1 a i b = -10 ma i c = -3 a i b = -100 ma i c = -5 a i b = -250 ma -0.25 -0.7 -0.7 v v v v be(sat) (1) base-emitter saturation voltage i c = -1 a i b = -10 ma -1.0 v h fe (1) dc current gain i c = -1 a v ce = -2 v i c = -3 a v ce = -2 v i c = -5 a v ce = -2 v i c = -10 a v ce = -2 v 100 100 80 140 100 40 300 1. pulsed duration = 300 s, duty cycle 1.5 % obsolete product(s) - obsolete product(s)
STS05DTP03 electrical characteristics 5/10 2.1 electrical characteristics (curves) figure 2. dc current gain q1 npn transistor figure 3. dc current gain q1 npn transistor figure 4. collector-emitter saturation voltage q1 npn transistor figure 5. base-emitter saturation voltage q1 npn transistor figure 6. switching time resistive load q1 npn transistor figure 7. switching time resistive load q1 npn transistor obsolete product(s) - obsolete product(s)
electrical characteristics STS05DTP03 6/10 figure 8. dc current gain q2 pnp transistor figure 9. dc current gain q2 pnp transistor figure 10. collector-emitter saturation voltage q2 pnp transistor figure 11. base-emitter saturation voltage q2 pnp transistor figure 12. switching time resistive load q2 pnp transistor figure 13. switching time resistive load q2 pnp transistor obsolete product(s) - obsolete product(s)
STS05DTP03 package mechanical data 7/10 3 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and products status are available at: www.st.com . ecopack is an st trademark obsolete product(s) - obsolete product(s)
package mechanical data STS05DTP03 8/10 s o- 8 mechanical data dim. mm min. typ. max. a 1.75 a1 0.10 0.25 a2 1.25 b 0.2 8 0.4 8 c0.17 0.2 3 d4. 8 04. 9 0 5.00 e5. 8 0 6.00 6.20 e1 3 . 8 0 3 . 9 0 4.00 e1.27 h0.25 0.50 l0.40 1.27 l1 1.04 k0 8 ccc 0.10 001602 3 _d obsolete product(s) - obsolete product(s)
STS05DTP03 revision history 9/10 4 revision history table 6. document revision history date revision changes 19-mar-2009 1 first release obsolete product(s) - obsolete product(s)
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