leshan radio company, ltd. 2 emitter 3 collector 1 base amplifier transistors npn silicon maximum ratings rating symbol value unit collector?emitter voltage v ceo 50 45 vdc collector?base voltage v cbo 60 55 vdc emitter?base voltage v ebo 6.0 vdc collector current ? continuous i c 200 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking LMBT6428LT1G = 1km, lmbt6429lt1g = m1l electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(3) v (br)ceo vdc (i c = 1.0 madc, i b = 0) LMBT6428LT1G 50 ? (i c = 1.0 madc, i b = 0) lmbt6429lt1g 45 ? collector?base breakdown voltage v (br)cbo vdc (i c = 0.1madc, i e = 0) LMBT6428LT1G 60 ? (i c = 0.1madc, i e = 0) lmbt6429lt1g 55 ? collector cutoff current i ces adc ( v ce = 30vdc, ) ? 0.1 collector cutoff current i cbo adc ( v cb = 30vdc, i e = 0 ) ? 0.01 emitter cutoff current i ebo ? 0.01 adc ( v eb = 5.0vdc, i c = 0) 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 6428lt1 6429lt1 1 3 2 LMBT6428LT1G lmbt6429lt1g case 318?08, style 6 sot?23 (to?236ab) z LMBT6428LT1G 1km 3000/ t ape & reel device marking shipping 1km 10000/ t ape & reel lmbt6429lt1g m 1l lmbt6429lt3g m 1l 10000/ t ape & reel ordering information 3000/ t ape & reel lmbt6428lt3g we declare that the material of product compliance with rohs requirements. rev.o 1/5
leshan radio company, ltd. LMBT6428LT1G lmbt6429lt1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe ?? (i c = 0.01 madc, v ce = 5.0 vdc) LMBT6428LT1G 250 ? lmbt6429lt1g 500 ? (i c = 0.1 madc, v ce (i c = 1.0 madc, v ce (i c = 10 madc, v ce collector?emitter saturation voltage v ce(sat) vdc (i c = 10 madc, i b = 0.5 madc) ?? 0.2 (i c = 100 madc, i b = 5.0 madc) ?? 0.6 base?emitter on voltage v be(on) 0.56 0.66 vdc (i c = 1.0 madc, v ce = 5.0madc) small?signal characteristics current gain?bandwidth product f t 100 700 mhz (v ce = 5.0 vdc, i c = 1.0madc, f = 100 mhz) output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ?? 3.0 pf input capacitance c ibo ?? 8.0 pf (v eb = 0.5 vdc, i c = 0 , f = 1.0 mhz) r s i n e n ideal transistor figure 1. transistor noise model = 5.0 vdc) LMBT6428LT1G 250 650 lmbt6429lt1g 500 1250 = 5.0 vdc) LMBT6428LT1G 250 ? lmbt6429lt1g 500 ? = 5.0 vdc) LMBT6428LT1G 250 ? lmbt6429lt1g 500 ? rev.o 2/5
leshan radio company, ltd. v t , total noise voltage (nv) r s , source resistance ( ) figure 6. total noise voltage f, frequency (hz) figure 2. effects of frequency noise characteristics (v ce = 5.0 vdc, t a = 25c) noise voltage e n , noise voltage (nv) e n , noise voltage (nv) i n , noise current (pa) nf, noise figure (db) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 100 hz noise data i c , collector current (ma) figure 3. effects of collector current f, frequency (hz) figure 4. noise current r s , source resistance ( ) figure 5. wideband noise figure r s , source resistance ( ) figure 7. noise figure bandwidth = 1.0 hz nf, noise figure (db) bandwidth = 1.0 hz bandwidth = 1.0 hz 300 a r s 0 i c = 10 ma 3.0 ma 1.0 ma f = 10 hz r s 0 100 hz 1.0 khz 10 khz 100 khz 30 a i c = 10 ma 3.0 ma 1.0 ma 300 a 100 a 10 a r s 0 bandwidth = 10 hz to 15.7 khz i c = 1.0 ma 500 a 100 a 10 a bandwidth = 1.0 hz i c = 10 ma 3.0 ma 1.0 ma 300 a 100 a 30 a 10 a i c = 10 ma 3.0 ma 1.0 ma 300 a 100 a 30 a 10 a bandwidth = 1.0 hz 30 20 10 7.0 5.0 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 2.0 16 12 8.0 4.0 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 300 200 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 20 16 12 8.0 4.0 0 ~ ~ ~ ~ ~ ~ LMBT6428LT1G lmbt6429lt1g rev.o 3/5
leshan radio company, ltd. v ce = 5.0 v v r , reverse voltage (volts) figure 11. capacitance i c , collector current (ma) figure 9. ?on? voltages i c , collector current (ma) figure 8. dc current gain h fe , dc current gain (normalized) r vbe , base? emitter temperature coefficient (mv/ c) f t , current? gain ? bandwidth product (mhz) c, capacitance (pf) i c , collector current (ma) figure 10. temperature coefficients v, voltage (volts) i c , collector current (ma) figure 12. current?gain ? bandwidth product t a = 125c 25c ?55c t j = 25c v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v t j = 25c to 125c ?55c to 25c t j = 25c c cb c ob c eb c ib v ce = 5.0 v t j = 25c 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 4.0 3.0 2.0 1.0 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 0.8 0.6 0.4 0.2 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 ?2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 8.0 6.0 4.0 3.0 2.0 1.0 0.8 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 300 200 100 70 50 LMBT6428LT1G lmbt6429lt1g rev.o 4/5
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. LMBT6428LT1G lmbt6429lt1g rev.o 5/5
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