i, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistors telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 d45h series description ? low saturation voltage ? fast switching speeds ? complement to type d44h series applications ? designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators.converters and power amplifier. absolute maximum ratings(ta=25c) symbol vceo vebo ic icm pc t] tstg parameter collector-emitter voltage emitter-base voltage d45h8 d45h10.11 collector current-continuous collector current-peak collector power dissipation @tc=25'c junction temperature storage temperature range value -60 -80 -5 -10 -20 -50 150 -55-150 unit v v a a w ?c ?c thermal characteristics symbol r(h j-c rth j-a parameter thermal resistance, junction to case thermal resistance, junction to ambient max 2.5 75 unit r/w "cm/ , ^ 1 1 2 3 2 3 pin 1.base 2. collector 3.bwitter to-220c package w- -b v\ i'toj a " ' i i f~~v~*l ^ert e jdoc1^ if s- -4(*s soi-, 1, i j ft ?" c _^__ dim a b c d f g h j k l q r s u v mm win 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 ^ ~~ soft ?* tj nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to he both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistors d45h series electrical characteristics tc=25c unless otherwise specified symbol vce(sat) vbe(sat) ices iebo hpe-1 hfe-2 cob fr parameter collector-emitter saturation voltage d45h10 d45h8.11 base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain d45h10 d45h8.11 d45h10 d45h8.11 output capacitance current-gain ? bandwidth product conditions ic=-8a;ib=-0.8a lc=-8a;lb=-0.4a ic=-8a;ib=-0.8a vce= rated vceo; veb= -5v; lc= 0 |_ ? ta . \/^,_? 1\ u? 4a ? \a-i-- -1\ vcb=-10v,f=0.1mhz lc=-0.5a;vce=-1 ov;ftest=20mhz min 35 60 20 40 typ 130 50 max -1 -1.5 -10 -100 unit v v ua ua pf mhz switching times ts tf storage time fall time lc= -5a; ib1= -ib2= -0.5a vcc= 20v 0.5 0.14 n s u s
|
