vishay general semiconductor s3a thru s3m document number 88713 30-jun-06 www.vishay.com 1 surface mount glass passivated rectifier features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? low forward voltage drop ? low leakage current ? high forward surge capability ? meets msl level 1, per j-std-020c, lf max peak of 260 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in general purpose rectification of power supplies, inverters, converters and free- wheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-214ab (smc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end do-214ab (smc) major ratings and characteristics i f(av) 3.0 a v rrm 50 v to 1000 v i fsm 100 a i r 10 a v f 1.15 v t j max. 150 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol s3a s3b s3d s3g s3j s3k s3m unit device marking code sa sb sd sg sj sk sm maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current at t l = 103 c (1) i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 88713 30-jun-06 vishay general semiconductor s3a thru s3m note: (1) thermal resistance from junction to ambi ent and from junction to lead mounted on p.c.b. with 0.3 x 0.3" (8.0 x 8.0 mm) copp er pad area ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol s3a s3b s3d s3g s3j s3k s3m unit maximum instantaneous forward voltage at 2.5 a v f 1.15 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 10 250 a typical reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 2.5 s typical junction capacitance at 4.0 v, 1 mhz c j 60 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol s3a s3b s3d s3g s3j s3k s3m unit typical thermal resistance (1) r ja r jl 47 13 c/w ordering information preferred p/n unit weight (g) referred package code base quantity delivery mode s3j-e3/57t 0.211 57t 850 7" diameter plastic tape & reel s3j-e3/9at 0.211 9at 3500 13" diameter plastic tape & reel figure 1. forward current derating curve 150 0 50 60 70 8 0 90 100 110 120 130 140 160 0.5 1.0 1.5 2.0 2.5 3.5 3.0 resisti v eorind u cti v e load p.c.b. mo u nted on 0.3 x 0.3" ( 8 .0 x 8 .0 mm) copper pad areas a v erage for w ard c u rrent (a) lead temperat u re (c) figure 2. maximum non-repetitive peak forward surge current 1 100 10 100 10 200 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t l = 75 c 8 .3 ms single half sine- w a v e
document number 88713 30-jun-06 www.vishay.com 3 s3a thru s3m vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.6 0.7 10 100 0. 8 0.9 1.1 1.2 1.3 0.01 0.1 1 1.0 instantaneo u sfor w ard v oltage ( v ) instantaneo u sfor w ard c u rrent (a) t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 0 20 40 60 8 0 100 0.1 1 10 100 t j = 125 c t j = 25 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) figure 5. typical junction capacitance figure 6. typical transient thermal impedance 10 100 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.01 0.1 1 10 100 0.1 1 10 100 mo u nted on 0.20 x 0.27" (5 x 7 mm) copper pad areas t - p u lse d u ration (s) transient thermal impedance (c/ w ) 0.260 (6.60) 0.2 8 0 (7.11) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.2) 0.305 (7.75) 0.320 ( 8 .13) 0.220 (5.59) 0.246 (6.22) 0.079 (2.06) 0.103 (2.62) 0.114 (2.90) 0.126 (3.20) cathode band do-214ab (smc) 0.1 8 5 max. (4.69 max.) 0.320 ref 0.126 mi n . (3.20 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout 0 (0)
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