1994. 5. 11 1/1 semiconductor technical data KTC9013 epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features excellent h fe linearity. complementary to ktc9012. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 500 ma emitter current i e -500 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =1v, i c =50ma 64 - 246 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v base-emitter voltage v be i c =100ma, v ce =1v 0.8 1.0 v transition frequency f t v cb =6v, i c =20ma, f=100mhz 140 - - mhz collector output capacitance c ob v cb =6v, i e =0, f=1mhz - 7.0 - pf note : h fe classification d:64 91, e:78 112, f:96 135, g:118 166, h:144 202, i:176 246
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