cystech electronics corp. spec. no. : c819d3 issued date : 2012.07.27 revised date : page no. : 1/6 BTC1806D3 cystek product specification silicon npn epitaxial planar transistor BTC1806D3 features ? low saturation voltage, typically v ce(sat) =0.1v at i c /i b =1a/25ma ? excellent dc current gain characteristics ? pb-free lead plating and halogen-free package symbol outline b c e to-126ml e c b BTC1806D3 b base c collector e emitter absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v collector current (dc) i c 5 a collector current (pulse) i cp 9 a t a =25 c 1.5 power dissipation t c =25 c p d 15 w junction temperature tj 150 c storage temperature tstg -55~+150 c
cystech electronics corp. spec. no. : c819d3 issued date : 2012.07.27 revised date : page no. : 2/6 BTC1806D3 cystek product specification thermal characteristics parameter symbol value unit thermal resistance, junction to ambient r ja 83.3 c/w thermal resistance, junction to case r jc 8.3 c/w characteristics (ta=25c) symbol min. typ. max. unit test conditions bv cbo 100 - - v i c =50 a, i e =0 bv ceo 50 - - v i c =1ma, i b =0 bv ebo 6 - - v i e =50 a, i c =0 i cbo - - 0.1 a v cb =80v, i e =0 i ebo - - 0.1 a v eb =5v, i c =0 *v ce(sat) - 0.1 0.3 v i c =1a, i b =25ma *v ce(sat) - 0.23 0.4 v i c =2a, i b =50ma *v be(sat) 0.5 - 1.2 v i c =1a, i b =100ma h fe 1 250 - 500 - v ce =2v, i c =500ma h fe 2 80 - - - v ce =2v, i c =3a f t - 210 - mhz v ce =2v, i c =500ma, f=100mhz cob - 25 - pf v cb =10v, i e =0, f=1mhz *pulse test: pulse width 380s, duty cycle 2% ordering information device package shipping BTC1806D3 to-126 (pb-free lead plating package) 200 pcs / bag, 15 bags/box, 10 boxes/carton
cystech electronics corp. spec. no. : c819d3 issued date : 2012.07.27 revised date : page no. : 3/6 BTC1806D3 cystek product specification typical characteristics current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v saturation voltage vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ic=20ib ic=80ib ic=10ib ic=40ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=20ib on voltage vs collector current 100 1000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbeon@vce=2v power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 2 4 6 8 10 12 14 16 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c819d3 issued date : 2012.07.27 revised date : page no. : 4/6 BTC1806D3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 1 10 100 1000 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ib=2ma ib=5ma ib=10m a vcesat output characteristics 0 1 2 3 4 5 6 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0ma ib=5ma 10ma 20ma 100ma 50ma 30ma capacitance vs reverse-biased voltage 10 100 1000 0.1 1 10 100 reverse-biased voltage---(v) capacitance---(pf) cob cib
cystech electronics corp. spec. no. : c819d3 issued date : 2012.07.27 revised date : page no. : 5/6 BTC1806D3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c819d3 issued date : 2012.07.27 revised date : page no. : 6/6 BTC1806D3 cystek product specification to-126ml dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.118 0.134 3.000 3.400 e *0.090 *2.28 a1 0.071 0.087 1.800 2.200 e1 0.176 0.183 4.460 4.660 b 0.026 0.034 0.660 0.860 l 0.594 0.610 15.100 15.500 b1 0.046 0.054 1.170 1.370 l1 0.051 0.059 1.300 1.500 c 0.018 0.024 0.450 0.600 p 0.159 0.167 4.040 4.240 d 0.307 0.323 7.800 8.200 1 0.118 0.126 3.000 3.200 e 0.425 0.441 10.800 11.200 2 0.122 0.130 3.100 3.300 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: c1806 device ?? 1 2 3 e c b date code: year+month year: 2005 ( 5,2006 ( 6, ?., etc month: jan ( 1,feb n ame ( 2,?,sep ( 9, oct ( a nov ( b, dec ( c style: pin 1.emitter 2.collector 3.base 3-lead to-126ml plastic package cystek packa g e code: d3
|
