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  1/7 axelite confidential materials, do not copy or distribute without written consent. rev.1.0 aug. 15 , 20 11 AX8113 micropower, ultra-sensitive hall effect switch ? general description AX8113 is a hall effect sensor device with dual output driver, mainly designed for battery C operation, hand-held equipment (such as cellular and cordless phone, pda). for AX8113 , the total operation power is down to 10uw in the 1.8v supply. either north or south pole of sufficient strength will turn the output on. the output will be turned off under no magnetic field. while the magnetic flux density (b) is larger than operate point b ops ( so uth pole), the out1 will be turned on (low), the out1 is held until b is lower than release point b r ps (south pole) , then turned off (high). while the magnetic flux density (b) is larger than operate point b op n (north pole), the out2 will be turned on (low), the output is held until b is lower than release point b rpn (north pole) , then turned off (high). ? features - micro power operation for battery applications - 1.65v to 3.30v battery operation - chopper stabilized technology - operation with south pole (out1) or north pole (out2) - good rf noise immunity - high sensitivity and high stability of the magnetic switching points - 5-pin thin tsot- 23 package ? b lock d iagram offset cancellation logic out1 vdd + - n-mos awake/sleep timing control hall plate p-mos vdd n-mos p-mos out2 gnd v?mw`r?y?b? www.gofotech.com
2/7 axelite confidential materials, do not copy or distribute without written consent. rev.1.0 aug. 15 , 20 11 ax811 3 ? pin assignme t the package s of AX8113 are tsot - 23- 5 l ; the pin ass ignment is given by : name description vdd power input gnd ground out 1 output pin (active low in s - pole ) out2 output pin (active low in n - pole ) ? order/marking information order information top marking ? a bsolute m aximum r atings (at t a =25 c ) characteristics symbol rating unit vdd pin voltage v dd - 0.3 to 4.5 v v output pin voltage v out - 0.3 to 4.5 v v output current i out 1 ma storage temperature range t st - 65 to +150 c junction temperature t j +125 c operating temperature range t op - 40 to +85 c thermal resistance from junction to case  j c 180 c/w thermal resistance from junction to ambient  ja 250 c/w power dissipation[pd= ( t j - t a  ja ] pd 400 mw note : ja is measured with the pcb copper area of approximately 1 in 2 (multi - layer). o u t 2 g n d n c v d d o u t 1 1 2 3 4 t s o t - 2 3 - 5 l 5 p a c k a g e t y p e a x 8 1 1 3 x x x p a c k i n g b l a n k : b a g a : t a p i n g b t : t s o t - 2 3 - 5 l h a x 8 1 1 3 w w : 0 1 ~ 2 6 ( a ~ z ) 2 7 ~ 5 2 ( a ~ z ) y e a r : a = 2 0 1 0 1 = 2 0 1 1 i d c o d e : i n t e r n a l g y w x v?mw`r?y?b? www.gofotech.com
3/7 axelite confidential materials, do not copy or distribute without written consent. rev.1.0 aug. 15 , 20 11 ax811 3 ? e lectrical c haracteristics ( v dd = 1.8 v, t a =25c, unless otherwise specified) characteristics symbol conditions min typ max units supply voltage v dd 1.65 1.8 3.3 v supply current i dd awake state - 1.4 3 ma sleep state - 3.6 7 ua average - 5 10 ua output high voltage v o h i o ut =0.5 ma (source) v dd - 0 .2 - - v output low voltage v o l i o ut =0.5 ma (sink) - - 0.2 v output wake - up time t wake - up - 4 0 80 u s period t period - 4 0 80 ms duty cycle d.c - 0.1 - % ? magnetic characteristics ( v dd = 1.8 v, t a =25c, unless otherwise specified) characteristics symbo l conditions min typ max units operating points b ops - 30 42 gauss b opn - 42 - 30 - release points b r p s 10 2 0 - b r p n - - 20 - 10 hysteresis b hys - 10 - v?mw`r?y?b? www.gofotech.com
4/7 axelite confidential materials, do not copy or distribute without written consent. rev.1.0 aug. 15 , 20 11 ax811 3 1. out1 : 2. out2 : 0 b o u t 1 b r p s b o p s s h i g h s t a t e l o w s t a t e n t o p m a r k i n g n s n 0 b o p n b r p n b o u t 2 s h i g h s t a t e l o w s t a t e t o p m a r k i n g s n v?mw`r?y?b? www.gofotech.com
5/7 axelite confidential materials, do not copy or distribute without written consent. rev.1.0 aug. 15 , 20 11 ax811 3 ? a pplication c ircuit ? sensor location 1 2 3 4 a x 8 1 1 3 5 - 1 . 6 5 ~ 3 . 3 v + o u t p u t 1 o u t p u t 2 1 . 4 5 m m 0 . 8 m m t o p v i e w v?mw`r?y?b? www.gofotech.com
6/7 axelite confidential materials, do not copy or distribute without written consent. rev.1.0 aug. 15 , 20 11 ax811 3 ? typical characteristics v?mw`r?y?b? www.gofotech.com
7/7 axelite confidential materials, do not copy or distribute without written consent. rev.1.0 aug. 15 , 20 11 ax811 3 ? p ackage o utlines symbol dimensions in millimeters dimensions in inc hes min. nom. max. min. nom. max. a - - 1.10 - - 0.043 a1 0.00 - 0.10 0 - 0.004 a2 0.70 0.90 1.00 0.028 0.035 0.039 b 0.30 0.40 0.50 0.012 0.016 0.020 c 0.08 0.14 0.20 0.003 0.006 0.008 d 2.80 2.90 3.00 0.110 0.114 0.118 e 2.60 2.80 3.00 0.102 0.1 10 0.118 e1 1.50 1.60 1.70 0.059 0.063 0.067 e 0.95 bsc. 0.037 bsc. e1 1.90 bsc. 0.075 bsc. l 0.30 0.45 0.60 0.012 0.018 0.024 l1 0.60 ref. 0.024 ref. l2 0.25 bsc. 0.010 bsc. y - - 0.10 - - 0.004 r 0.10 - - 0.004 - - 0 o - 8 o 0 o - 8 o jeced outline: mo-193 ab e 1 e e e 1 b d a a 1 a 2 y l 1 r l c l 2 v?mw`r?y?b? www.gofotech.com


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