SSM5G09TU 2004-01-16 1 silicon p channel mos type (u-mos )/silicon epitaxial schottky barrier diode SSM5G09TU dc-dc converter ? combined pch mosfet and scho ttky diode into one package. ? low r ds (on) and low v f maximum ratings (ta = 25c) mosfet characteristics symbol rating unit drain-source voltage v ds ? 12 v gate-source voltage v gss 8 v dc i d ? 1.5 drain current pulse i dp (note 2) ?6 .0 a p d (note 1) 0.5 drain power dissipation t = 10s 0.8 w channel temperature t ch 150 c maximum ratings (ta = 25c) schottky diode characteristics symbol rating unit maximum (peak) reverse voltage v rm 15 v reverse voltage v r 12 v average forward current i o 0.5 a peak one cycle surge forward current (non-repetitive) i fsm 2 (50 hz) a junction temperature t j 125 c maximum ratings (ta = 25c) mosfet, diode common characteristics symbol rating unit storage temperature t stg ? 55~125 c operating temperature t opr (note 3) ? 40~85 c note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) note 2: the pulse width limited by max channel temperature. note 3: operating temperature limited by max channel temperat ure and max junction temperature. unit: mm ufv jedec ? jeita ? toshiba 2-2r1a weight: 7 mg (typ.)
SSM5G09TU 2004-01-16 2 marking equivalent circuit handling precaution when handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against st atic discharge. operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area. when using this device, be sure to take heat dissipation fully into account. 5 1 3 kep 2 4 5 13 2 4
SSM5G09TU 2004-01-16 3 mosfet electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 8 v, v ds = 0 ? ? 1 a v (br) dss i d = ? 1 ma, v gs = 0 ? 12 ? ? drain-source breakdown voltage v (br) dsx i d = ? 1 ma, v gs = +8 v ? 4 ? ? v drain cut-off current i dss v ds = ? 12 v, v gs = 0 ? ? ? 1 a gate threshold voltage v th v ds = ? 3 v, i d = ? 0.1 ma ? 0.5 ? ? 1.1 v forward transfer admittance |y fs | v ds = ? 3 v, i d = ? 0.75 a (note 4) 1.75 3.5 ? s i d = ? 0.75 a, v gs = ? 4 v (note 4) ? 100 130 drain-source on-resistance r ds (on) i d = ? 0.75 a, v gs = ? 2.5 v (note 4) ? 130 200 m ? input capacitance c iss v ds = ? 10 v, v gs = 0, f = 1 mhz ? 550 ? pf reverse transfer capacitance c rss v ds = ? 10 v, v gs = 0, f = 1 mhz ? 155 ? pf output capacitance c oss v ds = ? 10 v, v gs = 0, f = 1 mhz ? 170 ? pf turn-on time t on ? 34 ? switching time turn-off time t off v dd = ? 10 v, i d = ? 0.75 a v gs = 0~ ? 2.5 v, r g = 4.7 ? ? 28 ? ns note 4: pulse measurement switching time test circuit precaution v th can be expressed as the voltage between the gate an d source when the low operating current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) be sure to take this into consideration when using the device. the v gs recommended voltage for turning on this product is -2.5v or higher. t on t off (b) v in (c) v out 0 v ? 2.5 v v dd v ds (on) t r t f 10% 90% 90% 10% (a) test circuit v dd = ? 10 v r g = 4.7 ? duty < = < 5 ns common source ta = 25c 0 ? 2.5 v in out v dd 10 s r g
SSM5G09TU 2004-01-16 4 schottky diode electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v f (1) i f = 0.3 a ? 0.33 0.39 v forward voltage v f (2) i f = 0.5 a ? 0.37 0.43 v reverse current i r v r = 12 v ? ? 100 a total capacitance c t v r = 0 v, f = 1 mhz ? 80 ? pf precaution the schottky barrier diode of this pr oduct are having large-reverse-current -leakage characteristic compare to the other switching diodes. this current leakage and no t proper operating temperat ure or voltage may cause thermal runaway. be sure to take forward and reverse loss into consideration when you design.
SSM5G09TU 2004-01-16 5 mos electrical characteristics graph i d - v ds (mosfet) -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 -2 -1.5 -1 -0.5 0 drain-source voltage v ds (v) drain current i d (ma) common source ta=25 v gs =-1.8v -2.0v -2.5v -4.0v i d - v gs (mosfet) 0.01 0.1 1 10 100 1000 10000 -2.5 -2 -1.5 -1 -0.5 0 gate-source voltage v gs (v) drain current i d (ma) common source v ds =-3v ta=85 -25 25 - - - - - - - r ds(on) - i d (mosfet) 0 100 200 300 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 drain current i d (a) drain-source on-resistance r ds(on) (m) v gs =-4.0v -2.5v common source ta=25 r ds(on) - v gs (mosfet) 0 0.1 0.2 0.3 0.4 0.5 -8 -6 -4 -2 0 gate-source voltage v gs (v) drain-source on-resistance r ds(on) () common source i d =-0.6a ta=85 25 -25 r ds(on) - ta (mosfet) 0 100 200 300 -25 0 25 50 75 100 ambient temperture ta () drain-source on-resistance r ds(on) () -4.0v -2.5v common source i d =-0.6a vth - ta (mosfet) -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 -25 0 25 50 75 100 ambient temperture ta () gate threshold voltage vth(v) common source i d =-0.1ma v ds =-3v
SSM5G09TU 2004-01-16 6 |yfs| - i d (mosfet) 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 drain current i d (a) forward transfer admittance |yfs| (ms) commonm source v ds =-3v ta=25 -- - - - c - v ds (mosfet) 10 100 1000 0.1 1 10 100 drain-source voltage v ds (v) capacitance c (pf) common source v gs =0v f=1mhz ta=25 c iss c oss c rss ---- i dr - v ds (mosfet) -2 -1.5 -1 -0.5 0 0 0.2 0.4 0.6 0.8 1 drain-source voltage v ds (v) drain reverse current i dr (ma) common source v gs =0 ta=25 i dr d g s t - i d (mosfet) 0.1 1 10 100 1000 0.01 0.1 1 10 drain curren i d (ma) switching time t (ns) common source v dd =-10v v gs =02.5v ta=25 toff tf ton tr -- - - dynamic input characteristic (mosfet) -10 -8 -6 -4 -2 0 012345678910 tatal gate charge q g (nc) gate-source voltage v gs (v) common source v dd =-10v i d =1.2a ta=25
SSM5G09TU 2004-01-16 7 safe operating area (mosfet) 0.001 0.01 0.1 1 10 0.1 1 10 100 drain-source current v ds (v) drain current i d (a) dc operation ta=25 i d max (continuous) i d max (pu lsed) * 1ms 10ms 100ms mounted on fr4 board (25.4 mm ? 25 .4 mm ? 1 .6 t cu pad: 645 mm2 ) *:single nonrepetive pulse ta ? 25c curves must be derated linealy with increase in temperture. - - - - - - - - - p d - ta (mosfet) 0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160 ambient temperature ta () drain power dissipationp d (mw) mounted on fr4 board (25.4 mm ? 25.4 mm ? 1.6 t, cu pad: 645 mm2
SSM5G09TU 2004-01-16 8 sbd electrical characteristics graph reverse voltage v r (v) i r ? v r (sbd) reverse current i r (ma) 10 0.001 0 1 0.1 0.01 12 3 pulse measurement ta = 25c 50 6 9 75 85 forward voltage v f (v) i f ? v f (sbd) 1 1000 100 10 0.1 0.4 0.5 0.7 75 50 ta = 25c 0 0 0.2 0.3 0.6 85 forward current i f (ma) capacitance c t (pf) reverse voltage v r (v) c t ? v r (sbd) 3000 1 10 100 1000 0.01 0.1 1 10 100 f = 1 mhz ta = 25c
SSM5G09TU 2004-01-16 9 transient thermal impedance graph 1 0.001 1000 100 10 0.1 100 1000 1 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) 0.01 10 pulse width t w (s) r th ? t w (sbd) transient thermal impedance r th (c/w) pulse width t w (s) r th ? t w (mosfet) transient thermal impedance r th (c/w ) 0.001 1000 0.01 0.1 1 100 10 100 1000 1 10 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 )
SSM5G09TU 2004-01-16 10 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within s pecified operating ranges as set forth in the most recent toshiba products specific ations. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semicon ductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are inte nded for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunc tion or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traffic signa l instruments, combusti on control instruments, medical instruments, all types of safety devices, etc .. unintended usage of toshiba products listed in this document shall be made at th e customer?s own risk. ? toshiba products should not be embedded to the do wnstream products which ar e prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
|
