click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. micross components ltd, united kingdom, te l: +44 1603 788967, fax: +44 1603788920, email: chipcomponents@micross.com web: www.micross.com/d istribution.aspx features ? direct ? replacement ? for ? intersil ? LS3N163 ? absolute ? maximum ? ratings 1 ? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +200c ? operating ? junction ? temperature ?\ 55c ? to ? +150c ? maximum ? power ? dissipation ? continuous ? power ? dissipation ?? 375mw ? maximum ? current drain ? current ? 50ma ? maximum ? voltages ? drain ? to ? gate ?\ 40v ? drain ? to ? source ?\ 40v ? peak ? gate ? to ? source 2 125v ? LS3N163 ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristic ? min ? typ. ? max ? units ? conditions ? i gssf ? gate ? forward ? current ?? \ 10 ? \\? \\? pa ? v gs ? = ?\ 40v, ??? v ds ? = ? 0v ? ? t a = ? +125c ? \\? \\? \ 25 ? bv dss ? drain ? to ? source ? breakdown ? voltage ?\ 40 ? \\? \\? ? ? v ? i d ? = ?\ 10a, ??? v gs ? = ? 0v ? bv sds ? source \ drain ? breakdown ? voltage ?\ 40 ? \\? \\? i s ? = ?\ 10a, ? v gd ? = ? 0v, ?? v bd ? = ? 0v ? v gs(th) ? gate ? to ? source ? threshold ? voltage ?\ 2.0 ? \\? \ 5.0 ? v ds ? = ?? v gs ? , ???? i d ? = ?\ 10a ? \ 2.0 ? \\? \ 5.0 ? v ds ? = ?\ 15v, ??? i d ? = ?\ 10a ? v gs ? gate ? source ? voltage ?\ 3.0 ? \\? \ 6.5 ? v ds ? = ?\ 15v, ??? i d ? = ?\ 0.5ma ? i dss ? drain ? leakage ? current ? ?off? ? \\? \\? 200 ? pa ? v ds ? = ?\ 15v, ??? v gs ? = ? 0v ? i sds ? source ? drain ? current ? \\? \\? 400 ? v ds ? = ? 15v, ??? v gs ? = ?? v db ? = ? 0v ? r ds ( on ) ? drain ? to ? source ? ?on? ? resistance ? \\? \\? 250 ?? v gs ? = ?\ 20v, ??? i d ? = ?\ 100a ? i d ( on ) ? drain ? current ? ?on? ?\ 5.0 ? \\? \ 30 ? ma ? v ds ? = ?\ 15v, ?? v gs ? = ?\ 10v ? g fs ? forward ? transconductance ? 2000 ? \\? 4000 ? s ? v ds ? = ?\ 15v, ???? i d ? = ?\ 10ma ? , ??? f ? = ? 1khz ? g os ? output ? admittance ? \\? \\? 250 ? c iss ?? input ? capacitance?output ? shorted ? \\? \\? 2.5 ?? pf ? ? v ds ? = ?\ 15v, ???? i d ? = ?\ 10ma ? , ??? f ? = ? 1mhz 3 ? c rss ? reverse ? transfer ? capacitance ? \\? \\? 0.7 ? c oss ? output ? capacitance \ input ? shorted ? \\? \\? 3.0 ? switching ? characteristics ??\? t a ? = ? 25c ?? and ?? v bs ? = ? 0 ? unless ? otherwise ? noted ?????????????????????????????????????????????????????????????? timing ? waveforms ? symbol ? characteristic ? max ? units ? conditions ? t d ( on ) ? turn ? on ? delay ? time ? 12 ?? ns ? v dd ? = ?\ 15v ? i d(on) ? = ?\ 10ma ?????? r g ? = ? r l ? = ? 1.4k 3 ? t r ? turn ? on ? rise ? time ? 24 ? t off ? turn ? off ? time ? 50 ? ? ? ?? ?????????????????????????????????? switching ? test ? circuit ? the LS3N163 is an enhancement mode p-channel mosfet LS3N163 p-channel mosfet note ? 1 ?\? absolute ? maximum ? ratings ? are ? limiting values ? above ? which ? LS3N163 ? serviceability ? may ? be ? impaired. ? note ? 2 ? ? ? device ? must ? not ? be ? tested ? at ? 125v ? more ? than ? once ? or ? longer ? than ? 300ms. ? note ? 3 ? ? ? for ? design ? reference ? only, ? not ? 100% ? tested the LS3N163 is an enhancement mode p-channel mosfet designed for use as a general purpose amplifier or switch the hermetically sealed to-72 package is well suited for high reliability and harsh environment applications. (see packaging information). micross components europe tel: +44 1603 788967 email: chipcomponents@micross.com web: http://www.micross.com/distribution to-72 (bottom view) available packages: LS3N163 in to-72 LS3N163 in bare die. please contact micross for full package and die dimensions LS3N163 features: ? very high input impedance ? low capacitance ? high gain ? high gate breakdown voltage ? low threshold voltage
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