VN3515L/vn4012l vishay siliconix document number: 70207 s-04379?rev. e, 16?jul-01 www.vishay.com 11-1 n-channel 350- and 400-v (d-s) mosfets
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) VN3515L 350 15 @ v gs = 4.5 v 0.6 to 1.8 0.15 vn4012l 400 12 @ v gs = 4.5 v 0.6 to 1.8 0.16
low on-resistance: 8.7 secondary breakdown free: 420 v low power/voltage driven low input and output leakage excellent thermal stability low offset voltage full-voltage operation easily driven without buffer low error voltage no high-temperature ?run-away? high-voltage drivers: relays, solenoids, lamps, hammers, displays, transistors, etc. telephone mute switches, ringer circuits power supply, converters motor control to-226aa (to-92) top view s d g 1 2 3 device marking front view ?s? vn 3515l xxyy ?s? = siliconix logo xxyy = date code VN3515L ?s? vn 4012l xxyy VN3515L
parameter symbol VN3515L vn4012l unit drain-source voltage v ds 350 400 gate-source voltage v gs 20 20 v t a = 25 c 0.15 0.16 continuous drain current (t j = 150 c) t a = 100 c i d 0.09 0.1 a pulsed drain current a i dm 0.6 0.65 t a = 25 c 0.8 0.8 power dissipation t a = 100 c p d 0.32 0.32 w thermal resistance, junction-to-ambient r thja 156 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature.
VN3515L/vn4012l vishay siliconix www.vishay.com 11-2 document number: 70207 s- ? rev. d, 20 ? nov-00
limits VN3515L vn4012l parameter symbol test conditions typ a min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 420 350 400 gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 1.3 0.6 1.8 0.6 1.8 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 1 10 10 na v ds = 0.8 x v (br)dss , v gs = 0 v 1 1 zero gate voltage drain current i dss t j = 125 c 100 100 a on-state drain current b i d(on) v ds = 10 v, v gs = 4.5 v 800 150 150 ma v gs = 3.5 v, i d = 0.05 a 8.7 v gs = 4.5 v, i d = 0.1 a 8.7 15 12 drain-source on-resistance b r ds(on) t j = 125 c 15.5 35 30 v gs = 4.5 v, i d = 0.15 a 8.7 t j = 125 c 15.5 forward transconductance b g fs v ds = 15 v, i d = 0.1 a 350 125 125 ms diode forward voltage v sd i s = 0.1 a, v gs = 0 v 0.8 v dynamic input capacitance c iss 85 110 110 output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz 20 30 30 pf reverse transfer capacitance c rss 5 10 10 switching c t d(on) 2.5 20 20 turn-on time t r v dd = 25 v, r l = 250 2 20 20 t d(off) i d 0.1 a, v gen = 10 v r g = 25 27 65 65 ns turn-off time t f 9 65 65 notes a. for design aid only, not subject to production testing. vndv40 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
VN3515L/vn4012l vishay siliconix document number: 70207 s- ? rev. d, 20 ? nov-00 www.vishay.com 11-3 ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current transfer characteristics on-resistance vs. gate-to-source voltage v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v ds ? drain-to-source voltage (v) v ds ? drain-to-source voltage (v) i d ? drain current (a) t j ? junction temperature ( c) 500 0123 45 400 300 200 100 0 4.0 v 3.0 v 2.5 v 2.0 v v gs = 10 v 100 0 0.4 0.8 1.2 1.6 2.0 80 60 40 20 0 1.8 v 1.6 v 1.4 v 200 160 120 0 01 5 80 40 234 ? 55 c t j = 125 c 25 c 12 0 4 8 12 16 20 11 10 9 5 8 7 6 20 ma on-resistance vs. junction temperature v ds = 15 v i d = 100 ma 2.25 2.00 1.75 0.50 ? 50 ? 10 150 1.50 1.25 30 70 110 1.00 0.75 13 12 11 8 0 0.2 10 9 0.6 0.4 v gs = 4.5 v v gs = 4.5 v i d = 0.02 a i d = 0.1 a v gs = 2.0 v i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) r ds(on) ? on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) ( normalized)
VN3515L/vn4012l vishay siliconix www.vishay.com 11-4 document number: 70207 s- ? rev. d, 20 ? nov-00 threshold region capacitance normalized effective transient thermal impedance, junction-to-ambient gate charge load condition effects on switching normalized effective transient thermal impedance t 1 ? square wave pulse duration (sec) i d ? drain current (a) v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) q g ? total gate charge (pc) 10 1.0 0.01 0 0.1 0.5 1.0 1.5 ? 55 c 125 c 25 c 300 250 200 0 010 50 150 100 20 30 40 50 c rss c iss c oss 320 v 3 2 0 0 200 1000 1 400 600 800 v ds = 200 v 10 100 1000 100 10 1 v dd = 25 v r g = 25 v gs = 0 to 10 v t d(on) t d(off) t r i d = 0.1 a v ds = 10 v t j = 150 c 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.5 0.01 0.2 0.1 0.05 0.02 0.01 0.1 5 k 1.0 100 500 10 0.5 5 50 1 k 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 v gs = 0 v f = 1 mhz t f i d ? drain current (ma) c ? capacitance (pf) v gs ? gate-to-source voltage (v) t ? switching time (ns)
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