tsm3400 sot - 23 features advance trench process technology high density cell design for ultra low on - resistance application load switch pa switch ordering information part no. package packing tsm3400cx rf sot - 23 3kpcs / 7 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 30 v gate - source voltage v gs ?2 v continuous drain current i d 5.8 a pulsed drain current i dm 30 a continuous source current (diode condu ction) a,b i s 2.5 a maximum power dissipation @ ta = 25 o c p d 1.4 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to foot therm al resistance r ? j f 70 o c/w junction to ambient thermal resistance (pcb mounted) r ? ja 9 0 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 10 sec. product summary v ds (v ) r ds(on) (m ) i d (a) 28 @ v gs = 10v 5.8 33 @ v gs = 4.5v 5.0 30 52 @ v gs = 2.5v 4.0 block diagram n - channel mosfet pin definition : 1. gate 2. source 3. drain product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 30 -- -- v gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 0.7 -- 1.4 v gate body leakage v gs = ?2 v, v ds = 0v i gss -- -- 100 n a zero g ate voltage drain current v ds = 24v, v gs = 0v i dss -- -- 1.0 a on - state drain current v ds = 5v, v gs = 4.5v i d(on) 20 -- -- a v gs = 10v, i d = 5.8a -- 2 3 28 v gs = 4.5v, i d = 5a -- 2 8 33 drain - source on - state resistance v gs = 2 .5v, i d = 4 a r ds(on) -- 43 52 m forward transconductance v ds = 5 v, i d = 5a g fs 10 15 -- s diode forward voltage i s = 1.0a, v gs = 0v v sd -- 0. 76 1 .0 v dynamic b total gate charge q g -- 9 .7 12 gate - source charge q gs -- 1.63 -- gate - drain charge v ds = 15v, i d = 5.8a, v gs = 10v q gd -- 3.1 -- nc input capacitance c iss -- 857 1030 output capacitance c oss -- 97 -- reverse transfer capacitance v ds = 15v, v gs = 0v, f = 1.0mhz c rss -- 71 -- pf switching c turn - o n delay time t d(on) -- 3.3 5 turn - on rise time t r -- 4.7 7 turn - off delay time t d(off) -- 26 39 turn - off fall time v dd = 15v, r l = 1.8 , i d = 1a, v gen = 10v, r g = 6 t f -- 4.1 6.2 ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to produ ction testing. b. switching time is essentially independent of operating temperature. tsm3400 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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