semihow rev.a1,march 2013 htk1a60_htk1a80 features ? repetitive peak off - state voltage : 600v/800v ? r.m.s on ? state current (i t(rms) = 1a) ? sensitive gate trigger current - 5[ma] of igt at i, ii and iii quadrants. - 12[ma] of igt at iv quadrant. applications ac power or phase control through low output current of mcu or ic suck like heater, solenoid valve control, etc. general description semihow?s sensitive triac product is a glass passivated device, has a low gate trigger current, high stability in gate trigger current to variation of operating temperature and high off state voltage . it is generally suitable for power and phase control in ac application . htk1a60/KTK1A80 4 quadrants sensitive triac absolute maximum ratings (t j =25 unless otherwise specified ) v drm = 600v/800v i t(rms) = 1 a i tsm = 13 a i gt = 5ma/12ma t1 t2 g sot - 89 symbol symbol parameter conditions ratings unit htk1a60 htk1a80 v drm repetitive peak off - state voltage sine wave, 50/60hz, gate open 600 800 v v rrm repetitive peak reverse voltage 600 800 v i t(av) average on - state current full sine wave, t c = 72 o c 0.9 a i t(rms) r.m.s. on - state current 1 a i tsm surge on - state current ? cycle, 50hz/60hz, sine wave, non repetitive 12/13 a i 2 t fusing current t = 10ms 0.7 a 2 s p gm forward peak g ate power dissipation t j = 125 c 2 w p g(av) forward average gate power dissipation t j = 125 c, over any 20ms 0.2 w i fgm forward peak gate current t j = 125 c, pulse width 20us 0.5 a v rgm reverse peak gate voltage t j = 125 c, pulse width 20us 6 v t j operating junction temperature - 40~+125 o c t stg storage temperature - 40~+150 o c
semihow rev.a1,march 2013 htk1a60_htk1a80 thermal characteristics electrical characteristics ( t j =25 unless otherwise specified ) notes : 1. pulse width 1.0ms, duty cycle 1% symbol parameter conditions min typ max unit i drm repetitive peak off - state current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i rrm repetitive peak reverse current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i gt gate trigger current v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 5 ma 3+ - - 12 ma v gt gate trigger voltage v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 1.5 v 3+ - - 2.0 v v gd non - trigger gate voltage 1 v d = 12v, r l =330 ? , t j =125 o c 0.2 - - v v tm peak on - state voltage i t = 1.4a, i g = 20ma - 1.2 1.6 v dv/ dt critical rate of rise of off - state voltage v d = 2/3 v drm , t j =125 o c 10 - - v/us i h holding current i t = 0.2a - - 5 ma symbol parameter conditions min typ max unit r jc thermal resistance junction to case 48 o c /w r ja thermal resistance junction to ambient 150 o c /w
semihow rev.a1,march 2013 htk1a60_htk1a80 typical characteristics fig 1. r.m.s. current vs. power dissipation fig 2. r.m.s. current vs. case temperature fig 3. gate power characteristics fig 4. surge on state current rating (non - repetitive) fig 5. gate trigger current vs. junction temperature fig 6. gate trigger voltage vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 180 o 150 o 120 o 90 o 60 o 30 o power dissipation, p d [w] r.m.s. on state current, i t(rms) [a] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 v + gt1 v - gt1 v + gt3 v - gt3 junction temperature, t j [ o c] x 100(%) v gt (t o c) v gt (25 o c) 10 0 10 1 10 2 0 3 6 9 12 15 50hz 60hz surge on state current, i tsm [a] time [cycles] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 70 80 90 100 110 120 130 180 o 150 o 120 o 90 o 60 o 30 o maximum allowable case temperature, t c [ o c] r.m.s. on state current, i t(rms) [a] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i + gt3 junction temperature, t j [ o c] x 100(%) i gt (t o c) i gt (25 o c) i + gt1 i - gt1 i - gt3 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 25[ o c] i + gt3 25[ o c] i + gt1 i - gt1 i - gt3 p g(av) (0.2w) p gm (2w) v gd gate voltage, v g [v] gate current, i g [ma]
semihow rev.a1,march 2013 htk1a60_htk1a80 typical characteristics fig 7. instantaneous on state current vs. instantaneous on state voltage fig 8. thermal impedance vs. pulse time 0 1 2 3 4 5 10 -1 10 0 10 1 t j =125 o c instantaneous on state current, i t [a] instantaneous on state voltage, v t [v] t j =25 o c 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 thermal impedance [ o c/w] pulse time [sec] r g r l v dd v g (1) quadrant i r g r l v dd v g (2) quadrant ii r g r l v dd v g (3) quadrant iii r g r l v dd v g (4) quadrant iv measurement of gate trigger current note. whole parameter and test condition can not be over absolute maximum ratings in this datasheet. r s =0.16 ? v to =1.10v
semihow rev.a1,march 2013 htk1a60_htk1a80 package dimension sot - 89 - 3l
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