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sgp07 n 120 pow e r semi co nduc tor s 1 rev. 2.3 sep 07 fast igbt in n p t - technolo g y ? lo w e r e off c o m par ed to pr ev ious g ener ati on ? sh or t c i r c uit w i t h s t an d t i m e ? 1 0 s ? des i gne d f o r : - m o to r co n t ro l s - in v e rt e r - sm ps ? npt - t ec hnolog y of f er s : - ver y ti ght par am eter dis t r i buti on - high r ugg edn es s , tem peratur e s t ab le beh av io ur - par al le l s w itc h in g c apa bi lit y ? q u a lif ied ac c o r d i ng t o j e d e c 1 f o r tar get ap pl ic at ions ? pb- f r ee l e a d p l at ing; roh s c o m p liant ? com p lete pr oduc t s p ec tr u m and psp ic e m ode ls : h ttp :// www . i nf ine on.c o m / igbt/ ty p e v ce i c e off t j m a rkin g pac kag e sg p0 7n1 20 1200 v 8a 0.7m j 150 c g p 07n 120 pg - to-220-3-1 m aximum ratings par a m e t e r s y m b o l valu e un it col l ec tor-em i tter v o lta ge v ce 1200 v dc c o l l ec tor c u r r ent t c = 2 5 c t c = 100 c i c 16.5 7.9 p u l s ed col l e ct o r cu rre n t , t p l i m i ted b y t jm a x i cp uls 27 t u r n off s af e oper atin g ar e a v ce 1200v, t j 150 c - 27 a g a te-em i tter v o lta ge v ge 20 v av ala n c he ener g y , s i ng le p u ls e i c = 8a, v cc = 50v , r ge = 25 ? , start at t j = 25 c e as 40 mj shor t c i r c uit withs t and tim e 2 v ge = 1 5 v, 100 v v cc 1 2 00v, t j 150 c t sc 10 s po w e r dis s i p a ti on t c = 2 5 c p to t 125 w o per ati ng j unc t i on an d s t or age t em per atur e t j , t stg -55... +15 0 sol der i ng t em per atur e, 1. 6 m m ( 0.063 in.) f r om c a s e f o r 10s - 260 c 1 j - st d- 020 and j esd- 022 2 al lo wed num ber of s hor t c i r c uits : <1 000 ; tim e bet ween s hor t c i r c uits : >1s . g c e p g -t o-22 0-3- 1 http://
sgp07 n 120 pow e r semi co nduc tor s 2 rev. 2.3 sep 07 t h ermal resi st an ce parameter symbol conditions max. value unit ch ara c t e ri st ic ig bt ther m a l r e s i s t anc e, j unc tion ? c a s e r thjc 1 t her m a l r e s i s t anc e, j unc tion ? am bient r th j a pg - t o - 220- 3- 1 62 k/ w elect rica l ch a r act e r ist i c, at t j = 25 c, unl es s oth e r w is e s pec if ie d valu e p a ra me te r sy mbol conditions min. ty p. ma x . unit st at ic ch ara c t e ri st ic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 1200 - - col l ec tor-em i tter s a turat i on v o lta ge v ce (s a t ) v ge = 1 5 v, i c =8a t j =2 5 c t j = 150 c 2.5 - 3.1 3.7 3.6 4.3 gate-emitter threshold voltage v ge(th) i c =350 a, v ce = v ge 3 4 5 v z er o gat e vol t ag e c ol l ec tor c ur r ent i ce s v ce =120 0v,v ge =0v t j =2 5 c t j = 150 c - - - - 100 400 a ga te- e m i tter leak age c u r r e nt i ge s v ce =0v, v ge =2 0v - - 100 na t r ans c onduc tanc e g fs v ce =2 0v, i c =8a 6 - s d y n a mic ch ar act e r ist i c input c apac itance c iss - 720 870 o u tput c apacitance c oss - 60 75 rev e r se transfer capacitance c rss v ce =25v, v ge =0 v, f =1m h z - 40 50 pf g ate charg e q gat e v cc =9 60v , i c =8 a v ge =1 5v - 70 90 nc internal emitter i n d u c t anc e m eas ur ed 5m m ( 0.197 in .) f r o m c as e l e - 7 - nh shor t c i r c uit c o ll ec tor c u r r ent 2) i c( sc ) v ge =1 5v, t sc 10 s 1 00v v cc 1 200v , t j 150 c - 7 5 - a 2) al lo wed num ber of s hor t c i r c uits : < 100 0; t i m e bet w e en s hor t c i r c u i ts : >1s .
sgp07 n 120 pow e r semi co nduc tor s 3 rev. 2.3 sep 07 s w itc h ing cha r a c t e r is ti c , induc tiv e loa d, at t j =25 c value p a ra me te r sy mbol conditions min. ty p. ma x . unit ig bt ch aract eri s t i c t u r n - on del a y tim e t d( o n) - 27 35 ri s e t i m e t r - 29 38 t u rn -o ff d e l a y t i m e t d( of f) - 440 570 f a ll tim e t f - 21 27 ns t ur n- on ener g y e on - 0.6 0.8 t u r n - o ff ener g y e of f - 0.4 0.55 t o tal s w itc h i ng ener g y e ts t j =2 5 c, v cc =8 00v , i c =8a , v ge =1 5v/ 0 v, r g =4 7 ? , l 1) = 180 nh , c 1) =40 p f ener g y los s e s inc l ud e ? t ail? and di ode re v e rse re co v e r y . - 1.0 1.35 mj s w itc h ing cha r a c t e r is ti c , induc tiv e loa d, at t j =15 0 c valu e para me te r sy mbol conditions min. ty p. ma x . unit igbt ch aract eri s t i c t u r n - on del a y tim e t d( o n) - 30 36 ri s e t i m e t r - 26 31 t u rn -o ff d e l a y t i m e t d( of f) - 490 590 f a ll tim e t f - 30 36 ns t u r n - on ener g y e on - 1.0 1.2 t u r n - o ff ener g y e of f - 0.7 0.9 t o tal s w itc h i ng ener g y e ts t j = 150 c v cc =8 00v , i c =8a , v ge =1 5v/ 0 v, r g =4 7 ? , l 1) = 180 nh , c 1) =40 p f ener g y los s e s inc l ud e ? t ail? and di ode re v e rse re co v e r y . - 1.7 2.1 mj 1) leak age ind u c t anc e l a nd s t r a y c apac it y c du e to d y n a m i c tes t c i r c uit i n f i gur e e.
sgp07 n 120 pow e r semi co nduc tor s 4 rev. 2.3 sep 07 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 5a 10a 15a 20a 25a 30a 35 a t c =110c t c =80 c i c , collector current 1v 10v 100v 1000v 0. 1a 1a 10a dc 1ms 200 s 50 s 15 s t p =5 s f , sw it chi n g f r e q u e ncy v ce , colle ct or - em itter vo l t ag e figur e 1 . colle c t or c u r r e n t a s a func tion of s w itc h ing fr e que nc y ( t j 150 c, d = 0. 5, v ce = 800 v, v ge = +15 v /0 v, r g = 47 ? ) figur e 2 . s a f e ope ra ting a r e a ( d = 0, t c = 2 5 c, t j 150 c) p tot , p o we r dis s i p a t i o n 25c 50c 75c 100c 125c 0w 25w 50w 75w 100w 125w 150w i c , collector current 25c 50c 75c 100c 125c 0a 5a 10a 15a 20a t c , c a se tem p er a t u r e t c , c ase tem p er a t u r e figur e 3 . p o w e r dis s ipa t i on a s a func tion o f case t e mp er at u r e ( t j 150 c) figur e 4 . colle c t or c u r r e n t a s a func tion of case t e mp er at u r e ( v ge 15 v, t j 150 c) i c i c
sgp07 n 120 pow e r semi co nduc tor s 5 rev. 2.3 sep 07 i c , collector current 0v 1v 2v 3v 4v 5v 6v 7v 0a 5a 10a 15a 20a 25a 15v 13v 11v 9v 7v v ge =17v i c , collector current 0v 1v 2v 3v 4v 5v 6v 7 v 0a 5a 10a 15a 20a 25a 15v 13v 11v 9v 7v v ge =17v v ce , colle ct or - em itter vo l t ag e v ce , colle ct or - em itter vo l t ag e f i g u r e 5. t y p i ca l o u t p u t ch aract e r ist i cs ( t j = 25 c) f i g u r e 6. t y p i ca l o u t p u t ch aract e r ist i cs ( t j = 150 c) i c , colle ct or curre nt 3v 5v 7v 9v 11 v 0a 5a 10 a 15 a 20 a 25 a t j =-40c t j =+150c t j =+ 25 c v ce(sat) , collector - emitter saturation voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v i c =16a i c =4a i c =8 a v ge , ga te - em it ter vo l t ag e t j , j unct i o n t e m p e r a t ure f i g u r e 7. t y p i ca l t r an sf er ch ara c t e ri st ics ( v ce = 2 0 v ) f i g u r e 8. t y p i ca l coll ect o r - e mit t e r s a t ur a t ion v o lta g e a s a fu nc tion of junc tion t e mp erat u r e ( v ge = 1 5 v )
sgp07 n 120 pow e r semi co nduc tor s 6 rev. 2.3 sep 07 t , switching times 0a 5 a 10a 15a 20a 1 0ns 10 0ns t r t d(on) t f t d( of f ) t , switching times 0 ? 20 ? 40 ? 60 ? 80 ? 10 0 ? 10ns 10 0ns 00 0ns t r t d(on) t f t d( off ) i c , colle ct or curre n t r g , g a t e r e si st o r f i g u r e 9. t y p i ca l sw it ch in g t i mes a s a func tion of c o lle c t or c u r r e n t ( i nduc t i v e l oad , t j = 15 0 c, v ce = 8 00v , v ge = +1 5v / 0 v, r g = 4 7 ? , dy na m i c t e st ci rcu i t in fig . e ) f i g u r e 1 0 . t y p i c a l sw it ch i n g t i mes a s a func tion of ga te r e s i s t or ( i nduc t i v e l oad , t j = 15 0 c, v ce = 8 00v , v ge = +1 5v / 0 v, i c = 8a , dy na m i c t e st ci rcu i t in fig . e ) t , s w i t chi ng t i m e s - 5 0c 0 c 50c 1 0 0 c 1 50c 10ns 10 0n s t r t d(on) t f t d( o f f ) v ge(th) , gate - emitter threshold voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v typ. min. ma x . t j , j u n c ti o n te mpe r a t u r e t j , j unct i o n t e m p e r a t ure f i g u r e 1 1 . t y p i c a l sw it ch i n g t i mes a s a func tion of junc tion te mpe r a t ure ( i nduc t i v e l oad , v ce = 80 0v , v ge = +15 v /0 v, i c = 8a , r g = 4 7 ? , dy na m i c t e st ci rcu i t in fig . e ) figur e 1 2 . ga te -e mitte r th r e s hold v o lta g e a s a func tion of junc tion t e mpe r a t u r e ( i c = 0 . 3m a)
sgp07 n 120 pow e r semi co nduc tor s 7 rev. 2.3 sep 07 e , switching energy losses 0a 5 a 10a 15a 20a 0m j 1m j 2m j 3m j 4m j 5m j e on * e off e ts * e , switching energy losses 0 ? 20 ? 40 ? 60 ? 80 ? 100 ? 0.0m j 0.5m j 1.0m j 1.5m j 2.0m j 2.5m j e ts * e on * e off i c , colle ct or curre n t r g , g a t e r e si st o r f i g u r e 1 3 . t y p i c a l sw it ch i n g en erg y lo ss es as a f u n c t i o n o f co l l ect o r cu rren t ( i nduc t i v e l oad , t j = 15 0 c, v ce = 8 00v , v ge = +1 5v / 0 v, r g = 4 7 ? , dy na m i c t e st ci rcu i t in fig . e ) f i g u r e 1 4 . t y p i c a l sw it ch i n g en erg y lo ss es a s a func tion of ga te r e s i s t or ( i nduc t i v e l oad , t j = 15 0 c, v ce = 8 00v , v ge = +1 5v / 0 v, i c = 8a , dy na m i c t e st ci rcu i t in fig . e ) e , sw itc h in g en er g y l o ss es -50c 0c 50c 100c 150c 0.0m j 0.5m j 1.0m j 1.5m j 2.0m j e ts * e on * e of f z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1 s 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0. 5 t j , j u n c ti o n te mpe r a t u r e t p , pu l se w i d t h f i g u r e 1 5 . t y p i c a l sw it ch i n g en erg y lo ss es a s a func tion of junc tion t e mpe r a t u r e ( i nduc t i v e l oad , v ce = 80 0v , v ge = +15 v /0 v, i c = 8a , r g = 4 7 ? , dy na m i c t e st ci rcu i t in fig . e ) f i g u r e 1 6 . ig bt t r an sien t t h ermal impe da nc e a s a func tion of puls e w i dth ( d = t p / t ) *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. c 1 = 1 / r 1 r 1 r 2 c 2 = 2 / r 2 r ,(k/w) , (s) 0.1020 0.77957 0.40493 0.21098 0.26391 0.01247 0.22904 0.00092
sgp07 n 120 pow e r semi co nduc tor s 8 rev. 2.3 sep 07 v ge , gate - emitter voltage 0nc 20nc 40nc 60nc 80nc 0v 5v 10 v 15 v 20 v u ce = 9 60v c , capacitance 0v 10v 20v 30v 10 0pf 1nf c rss c oss c is s q ge , ga t e cha rge v ce , colle ct or - em itter vo l t ag e figur e 1 7 . t y pic a l ga t e c h a r ge ( i c = 8 a ) figur e 1 8 . t y pic a l c a pac i tance a s a f u n c t i o n o f co llect o r - e mit t er v o lt ag e ( v ge = 0 v , f = 1 m h z ) t sc , sh o r t c i r c u i t w i th st an d ti me 10v 11 v 1 2v 1 3 v 14 v 1 5v 0 s 5 s 10 s 15 s 20 s 25 s 30 s i c(sc) , short circuit collector current 10v 1 2v 14 v 16 v 1 8v 20 v 0a 50 a 1 00a 1 50a v ge , ga te - em it ter vo l t ag e v ge , ga te - em it ter vo l t ag e f i g u r e 1 9 . sh o r t cir c u i t w i t h st an d t i me as a func tion of ga te -e mitte r v o lta g e ( v ce = 12 00 v, s t ar t a t t j = 2 5 c) figur e 2 0 . t y pic a l s h o r t c i r c uit c o ll e c t or c u r r e nt a s a func tion of ga te -e mitte r v o lta g e ( 100v v ce 120 0v, t c = 2 5 c, t j 150 c)
sgp07 n 120 pow e r semi co nduc tor s 9 rev. 2.3 sep 07 pg-to220-3-1
sgp07 n 120 pow e r semi co nduc tor s 10 rev. 2.3 sep 07 figur e a . d e finition of s w itc h ing time s i rr m 90 % i rr m 10 % i rr m di / d t f t rr i f i, v t q s q f t s t f v r di /d t rr q= q q rr s f + t= t t rr s f + figur e c. d e finition of diode s sw it ch in g ch aract e r ist i c s p( t ) 12 n t( t ) j 1 1 2 2 n n t c rr r r r r figur e d. t h e r ma l e quiv a l e nt circu i t figur e b. d e finition of s w itc h ing los s e s f i g u r e e . d y n a mic t e st ci rcu i t leak age i nduc t anc e l =18 0nh, and s t r a y c a p a c i t y c =40 p f .
sgp07 n 120 pow e r semi co nduc tor s 11 rev. 2.3 sep 07 ed it io n 20 06- 01 p ublis he d b y infine on t e c hnologie s a g 8172 6 m n c h e n , g e rman y ? infine on t e c hnologie s a g 9 / 1 2 /0 7 . a l l rig h t s r ese rv ed . a t te ntion ple a s e ! t he inf o r m ation gi ven in th i s data s h eet s h al l i n no e v e n t be r egar d ed as a g uaran tee of c ond it ions or c harac teri s t ic s ( ? b es c haf f enhe its gara n ti e? ) . w i th r e s p ec t to a n y ex am ples or hi nt s giv en here i n, an y t y pic a l va lues s t at ed her e i n a nd/ or an y i n f o r m ation r e gar d i ng t he a ppl ic at ion of the d e v ic e , inf i ne on t e c hno log i es her eb y d i s c l a i m s an y and a ll war r ant ies an d l i a b i lit ies o f an y k i nd, inc l u d i ng with out lim itati on war r ant ies of non- i nf r ingem ent of int el l ec tual pr op er t y r i gh ts of an y t hir d p ar t y . information f o r f u r t her inf o r m ation on t e c hno log y , del i v er y term s a nd c o n d it ions and pr ic es p l eas e c ont ac t y o ur n eares t inf i neo n t ec hnol ogi es o f f i ce ( www .infine on.c o m ). wa r n ings due t o tec h nic a l r e q u ir em ents c o m ponents m a y c o n t ai n da nger o u s s ubs tanc es . f o r inf o r m ation on the t y p e s in q ues ti on ple a s e c o n t ac t y o ur near es t inf i ne on t e c hnol ogi es o f f i c e . inf i neo n t e c hnol ogi es com pone nts m a y on l y be us ed i n l i f e - s uppor t d e v i c e s or s y s t em s w i t h th e ex pr es s w r i tten ap pr ov al of inf i neo n t e c hnologies , if a f a ilur e of s u c h c o m ponents c an r eas onab l y be ex pec te d to c aus e the f a ilur e of that l i f e - s uppor t d e v i c e or s y s t em , or to af f e c t the s a f e t y or ef fec t iv enes s of tha t de v i c e or s y s t em . lif e s uppor t d e v i c e s or s y s t em s ar e inten ded t o be im plante d i n th e h u m a n bo d y , or to s u pp or t and/ or m aintain an d s us t a i n an d/or pr o t ec t h um an lif e. if the y f ai l , it is r e as ona bl e to as s um e that th e he al th of the us er or other per s o n s m a y be end ang er ed.

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