solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet to - 25 7 sf f 20p 1 0 j 20 amp / 10 0 volts 200 m w p - channel mosfet features: rugged construction with polysilicon gate low on - resistance and high transconductance excellent high temperature stability hermetically sealed, isolated package low total gate charge fast switching r eplacement for ir f9140 types tx, txv, s - level screening available maximum ratings symbol value units drain - source voltage v dss - 10 0 v gate ? source voltage v gs 20 v max. continuous drain current ( package limited) @ t c = 25oc @ t c = 1 00 oc i d 1 i d 2 20 11 a max. avala nche current @ l= 0.1 mh i ar 20 a repetitive avalanche energy @ l= 0.1 mh e ar 1 2 .5 mj single pulse avalanche energy @ l= 0.1 mh e as 500 mj total power dissipation @ t c = 25oc p d 100 w operating & storage temperature t op & t stg - 55 to +150 oc maximum thermal resistance (junction to case) r 0 jc 1. 2 5 oc/w package outline: to - 257 (j) pinout: pin 1: drain pin 2: source pin 3: gate suffix jdb suffix jub note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: FT0012 a doc
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www .ssdi - power.com sf f 20p10j electrical characteristics 4 / symbol min typ max units drain to source breakdown voltage v gs = 0 v , i d = 1 m a bv dss - 10 0 ?? ?? v drain to source on state resistance v gs = 1 0 v , i d = 11 a, tj = 25 o c v gs = 1 0 v , i d = 2 0a, tj = 25 o c r ds(on) ?? ?? 140 150 200 230 m w gate threshold voltage v ds = v g s , i d = 250 m a v gs(th) - 2 .0 ?? - 4 .0 v gate to source leakage v gs = 20v i gss ?? 5 100 na zero gate voltage drain current v ds = - 80v , v gs = 0v, t j = 25 o c v ds = - 80v , v gs = 0v, t j = 1 25 o c i dss ?? ?? 0.01 0.75 25 2 50 m a m a forward transconductance v ds = 1 0 v min , i d = 11 a, t j = 25 o c g fs 6 55 ?? mho total gate charge gate to source charge gate to drain charge v gs = 1 0v v d s = 5 0v i d = 18 a q g q gs q gd ?? ?? ?? 55 12 29 70 15 45 nc turn on delay time rise time tu rn off delay time fall time v gs = 1 0v v d s = 5 0v i d = 18 a r g = 9.1 w t d ( on ) t r t d ( off ) t f ?? ?? ?? ?? 3 0 27 70 45 35 8 5 85 6 5 nsec diode forward voltage i f = 20 a, v gs = 0 v v sd ?? 1. 9 0 4.20 v diode reverse recovery time peak reverse recovery current r everse recovery charge i f = 20 a, di/dt = 100a/usec t rr q rr ?? 2 7 0 2 3 5 0 3.6 nsec m c input capacitance output capacitance reverse transfer capacitance v gs = 0v v d s = 2 5 v f = 1 mhz c iss c oss c rss ?? ?? ?? 14 00 60 0 180 1650 740 260 pf notes: * pulse tes t: pulse width = 300sec, duty cycle = 2% . 4 / unless otherwise specified, all electrical characteristics @25 o c. note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. dat a sheet #: FT0012 a doc
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