2sb1261-z transistor (pnp) features power dissipation p cm : 2 w (tamb=25 ) collector current i cm : -3 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=- 100 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic=- 1 ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =- 100 a, i c =0 -7 v collector cut-off current i cbo v cb =- 60 v, i e =0 -10 a emitter cut-off current i ebo v eb =- 7 v, i c =0 -10 a h fe(1) v ce =- 2 v, i c =- 200 ma 60 h fe(2) v ce =- 2 v, i c =- 600 ma 100 400 dc current gain h fe(3) v ce =- 2 v, i c =- 2 a 50 collector-emitter saturation voltage v ce(sat) i c =- 1.5 a, i b =- 150 ma -0.3 v base-emitter saturation voltage v be(sat) i c =- 1.5 a, i b =- 150 ma -1.2 v transition frequency f t v ce =- 5 v, i c =- 1.5 a 120 mhz collector output capacitance c ob v cb = -1.0 v, i e =0, f= 1 mhz 30 pf turn on time t on 0.5 storage time t stg 2.0 switching time fall time t f v cc =-10v, i c =-1a, i b1 =-i b2 =-0.1a 0.5 s classification of h fe(1) rank m l k range 100-200 160-320 200-400 TO-252 1. base 2. collector 3. emitter 1 2 3 2sb1261-z http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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