i,, u na, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf linear power transistor BLW33 description n-p-n silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. the excellent d.c. dissipation properties for class-a operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. the combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. the transistor has a 1/4" capstan envelope with ceramic cap. quick reference data mode of operation class-a; linear amplifier 'vision mhz 860 860 vce v 25 25 ic ma 300 300 th c 70 25 dim<1> db -60 -60 p (1) o sync * ' w > 1,0 typ. 1,15 gp db > 10,0 typ. 10,5 note 1. three-tone test method (vision carrier-8 db, sound carrier-7 db, sideband signal -16 db), zero db corresponds to peak sync level. pin configuration pinning-sot122a. top view mbk1s7 fig.1 simplified outline. sot122a. pin 1 2 3 4 description collector emitter base emitter nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
uhf linear power transistor BLW33 ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (peak value); vbe = 0 vcesm open base emitter-base voltage (open collector) collector current d.c. or average ig (peak value); f> 1 mhz icm total power dissipation up to tmb = 25 c ptot storage temperature tstg operating junction temperature t, max. max. max. 50 v 30 v 4 v max. 1,25 a max. 1,9 a max. 19,3 w -65 to+150 "c max. 200 'c 10 (a) 1 1 (1) sec " ? ? t - . ~ [ tr - (1) > "'x 70 "cv- ' 1 1 \ "" |l l\f -- y"mb t 25 \\, gp4 _._ i 10 vce(v, dnd breakdown limit (independent of temperature) fig.2 d.c. soar. ? 102 fig.3 power derating curve vs. temperature. thermal resistance (see fig.4) from junction to mounting base (dissipation = 7,5 w; tmb = 74,5 c; i.e. th = 70 c) from mounting base to heatsink rthj-mb rth mb-h 10,1 k/w 0,6 ka/v
uhf linear power transistor BLW33 package outline studded ceramic package; 4 leads sot122a r+_ q ceramic beo n3 "t" +- _.. - i ^1 i t t i* / / -c -c ? " 1 7 ^ / metal it u rn ?l--|q w^hjla \ 10mm scale dimensions (millimetre dimensions are derived from the original inch dimensions) l unit a 597 i 5.85 4.74 5.58 0.18 ! 750 014 723 d2 h 6.48 i 724 622 6.93 27.56 9.91 25.78 9-14 m n i w i detaillt: 318 166 1182 2.66 13911.04 w w1 , 3.86 338 8-32 n qno 292 274 unc u' ' outline version sot122a references |ec jedec baj european projection 97-04-18
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