, lf nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 irf350/351/352/353 n-channel power mosfets features low ros(on) improved inductive ruggedness fast switching times rugged polyslllcon gate cell structure low input capacitance extended safe operating area improved high temperature reliability to-3 package (standard) product summary to-3 part number irf260 irf251 irf252 irf253 vds 400v 360v 400v 360v ros(on) 0.30 0.30 0.40 0.40 id 15a 15a 13a 13a maximum ratings ? characteristic drain-source voltage (1) drain-gate voltage (rcs= 1 .om 0) (1 ) gate-source voltage continuous drain current tc=25c continuous drain current tc-100'c drain current? pulsed (3) gate current? pulsed total power dissipation @ tc=25c derate above 25 c operating and storage junction temperature range maximum lead temp, for soldering purposes. 1/8" from case for 5 seconds symbol voss vogr vgs lo id idm low po tj, tstg tl irf350 400 400 IRF351 350 350 irf352 400 400 irf353 360 350 20 15 9.0 60 15 9.0 60 13 8.0 52 13 8.0 52 1.8 150 1.2 -65 to 150 300 unit vdc vdc vdc adc adc adc adc watts w/c ?c ?c notes: (1) tj=25cto 150c (2) pulse test: pulse width<300^s, duty cycle<2% (3) repetitive rating: pulse width limited by max. junction temperature nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
irf350/351/352/353 n-channel power mosfets electrical characteristics (tc=25c unless otherwise specified) characteristic drain-source breakdown voltage gate threshold voltage gate-source leakage forward gate-source leakage reverse zero gale voltage drain current on-state drain-source current (2) static drain-source on-state resistance (2) forward. transconductance (2) input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-of) delay time fall time total gate charge gate-source plus gate-drain) gate-source charge gate-drain ("miller") charge symbol vasiihi loss lass 9ls ciss c08s cfsa td(on) t, td(oll) tl q, qgi qgd type irf350 irf352 IRF351 irf353 all all all irf350 IRF351 irf352 irf353 irf350 IRF351 irf352 irf353 all all ' all all all all all all all all all mln 400 350 2.0 - - - - 15 13 _ - 8.0 - ? ? - ? ? ? - - - typ - - - - - - - _ - 0.25 0.3 11 2630 390 130 - ? ? ? 73 14 59 max - - 4.0 100 -100 250 1000 - - 0.3 0.4 ? 3000 600 200 35 65 150 75 120 - _ units v v v na na ma ma a a 0 0 0 pf pf pf ns ns ns ns nc nc nc test conditions vcs=ov ld=z60/4a vds-vos, lo=250na vcs=2ov vqs=-20v vds=max, rating, ves=ov vds=max. ratingxo.8, vos=ov, tc=125c vgs ? 10v id? 8 oa vos>ld{on>xrds(on}max.. lo~8.0a vg5=ov, vos-26v, f= 1.0mhz vdd=0.5bvdss, b=8,oa. zo=4.7q independent of operating temperature.) vqs=10v. b=18a. vos-0.8 max. rating (gate charge is essentially independent of operating temperature } thermal resistance junction-to-case case-to-sink junction-to-ambient rthjc rmcs rlhja al.l all all ? - - ? 0.1 _ 0.83 - 30 k/w k/w k/w mounting surface flat, smooth, and greased free air operation notes: (1) tj=25cto 150-c (2) pulse test: pulse width<300/js, duty cycle<2% (3) repetitive rating: pulse width limited by max. junction temperature
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