unisonic technologies co., ltd UBCX56 preliminary npn epitaxial si licon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r208-047.a npn medium power transistors ? description the utc UBCX56 is an npn epitaxial silicon transistor, it uses utc?s advanced technology to provide customers high dc current gain and high current capacity. ? features * high current capacity * high dc current gain sot-89 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UBCX56l-xx-ab3-r UBCX56g-xx-ab3-r sot-89 b c e tape reel
UBCX56 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r208-047.a ? absolute maximum ratings parameter symbol ratings unit collector-base voltage (open emitter) v cbo 100 v collector-emitter voltage (open base) v ceo 80 v emitter-base voltage (open collector) v ebo 5 v collector current (dc) i c 1 a peak collector current i cm 1.5 a peak base current i bm 0.2 a storage temperature t stg -65~+150 c total power dissipation (t a 25 c, note2) p tot 1.3 w junction temperature t j 150 c operating ambient temperature t opr -65~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm 2 . ? thermal characteristics parameter symbol ratings unit junction to ambient ja 94 c/w ? electrical characteristics (t a =25 c unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo i e =0, v cb =30v 100 na emitter cut-off current i ebo i c =0, v eb =5v 100 na collector-emitter satu ration voltage v ce ( sat ) i c =10ma, v ce =5v, f= 100mhz 0.5 v base-emitter voltage v be i c =500ma, v ce =2v 1 v transition frequency f t i c =10ma, v ce =5v, f= 100mhz 130 mhz dc current gain h fe1 vce=2v, ic=5ma 40 h fe2 vce=2v, ic=150ma 63 250 h fe3 vce=2v, ic=500ma 25 dc current gain ratio of the complementary pairs fe2 fe1 h h |i c |=150ma, |v ce |=2v 1.3 1.6 ? classification of h fe2 rank 10 16 range 63~100 100~250
UBCX56 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r208-047.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
