0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features small signal transistor. FMMT5209 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 4.5 v collector current i c 50 ma power dissipation p tot 330 mw operating and storage temperature range t j, t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base cut-off current i cbo v cb =35v, i e =0 50 na emitter-base current i ebo v eb =3v, i c =0 50 na collector-emitter saturation voltage v ce( sat) i c =10ma, i b =1ma 700 mv base-emitter on voltage v be(on ) i c =1ma, v ce =5v 850 mv dc current gain h fe i c =100a, v ce =5v 100 300 current-gain-bandwidth product f t i c =0.5ma, v ce =5v,f=20mhz 30 mhz small signal current transfer ratio hfe i c =1ma, v ce =5v, f=1khz 150 600 i c =200a, v ce =5v, r g =2k, f=30hz to 15khz at -3db points 3db i c =200a, v ce =5v, r g =2k, f=1khz to f=200hz 4db output capacitance c obo v cb =5v, i e =0, f=140khz 4pf nf noise figure marking marking 2q product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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